| No. |
Part Name |
Description |
Manufacturer |
| 2581 |
SST4401 |
Transistors > Small Signal Bipolar Transistors(up to 0.6W) |
ROHM |
| 2582 |
SST4403 |
Transistors > Small Signal Bipolar Transistors(up to 0.6W) |
ROHM |
| 2583 |
SST6838 |
Transistors > Small Signal Bipolar Transistors(up to 0.6W) |
ROHM |
| 2584 |
SST6839 |
Transistors > Small Signal Bipolar Transistors(up to 0.6W) |
ROHM |
| 2585 |
SSTA06 |
Transistors > Small Signal Bipolar Transistors(up to 0.6W) |
ROHM |
| 2586 |
SSTA56 |
Transistors > Small Signal Bipolar Transistors(up to 0.6W) |
ROHM |
| 2587 |
ST1200FXF21 |
Insulated Gate Bipolar Transistor Silicon N Channel Press Pack IGBT High Power Switching Applications Motor Control Applications |
TOSHIBA |
| 2588 |
STC03DE150 |
HYBRID EMITTER SWITCHED BIPOLAR TRANSISTOR - ESBT" 1500 V - 3 A - 0.55 Ohm |
ST Microelectronics |
| 2589 |
STC03DE170 |
HYBRID EMITTER SWITCHED BIPOLAR TRANSISTOR - ESBT" 1700 V - 3 A - 0.55 Ohm |
ST Microelectronics |
| 2590 |
STC03DE170HP |
Hybrid emitter switched bipolar transistor ESBT 1700V - 3A - 0.33 } |
ST Microelectronics |
| 2591 |
STC03DE170HV |
Hybrid emitter switched bipolar transistor ESBT 1700V - 3A - 0.33 } |
ST Microelectronics |
| 2592 |
STC03DE220HP |
Hybrid emitter switched bipolar transistor ESBT� 2200 V - 3 A - 0.33 � |
ST Microelectronics |
| 2593 |
STC03DE220HV |
Hybrid emitter switched bipolar transistor ESBT� 2200 V - 3 A - 0.33 � |
ST Microelectronics |
| 2594 |
STC04IE170HP |
Monolithic emitter switched bipolar transistor ESBT� 1700 V - 4 A - 0.17 � |
ST Microelectronics |
| 2595 |
STC04IE170HV |
Monolithic emitter switched bipolar transistor ESBT� 1700 V - 4 A - 0.17 � |
ST Microelectronics |
| 2596 |
STC08DE150 |
HYBRID EMITTER SWITCHED BIPOLAR TRANSISTOR - ESBT" 1500 V - 8 A - 0.075 Ohm |
ST Microelectronics |
| 2597 |
STD01N |
Bipolar transistor |
Sanken |
| 2598 |
STD01P |
Bipolar transistor |
Sanken |
| 2599 |
STD03N |
Bipolar transistor |
Sanken |
| 2600 |
STD03P |
Bipolar transistor |
Sanken |
| 2601 |
STE07DE220 |
Hybrid emitter switched bipolar transistor ESBT 2200 V - 7 A - 0.07 Ohm power module |
ST Microelectronics |
| 2602 |
STE50DE100 |
HYBRID EMITTER SWITCHED BIPOLAR TRANSISTOR ESBT" 1000 V - 50 A - 0.026 Ohm POWER MODULE |
ST Microelectronics |
| 2603 |
T1400TA18A |
Insulared Gate Bi-polar Transistor |
Westcode Semiconductors |
| 2604 |
TAN250A |
250 W, 50 V, high power common base bipolar transistor |
Acrian |
| 2605 |
TAN250A-2 |
250 W, 50 V, high power common base bipolar transistor |
Acrian |
| 2606 |
TAN250A-3 |
250 W, 50 V, high power common base bipolar transistor |
Acrian |
| 2607 |
TM25RZ/EZ-H |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 2608 |
UMC4N |
Discrete - Bipolar Transistors - Pre-Bias Transistors |
Diodes |
| 2609 |
UMC4N-7 |
Discrete - Bipolar Transistors - Pre-Bias Transistors |
Diodes |
| 2610 |
UMC5N |
Discrete - Bipolar Transistors - Pre-Bias Transistors |
Diodes |
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