| No. |
Part Name |
Description |
Manufacturer |
| 2521 |
2N554 |
PNP germanium power transistor for non-critical applications requiring economical components |
Motorola |
| 2522 |
2N555 |
PNP germanium power transistor for non-critical applications requiring economical components |
Motorola |
| 2523 |
2N5550 |
NPN Silicon Expitaxial Planar Transistor for general purpose/ high voltage amplifier applications |
Semtech |
| 2524 |
2N5551 |
NPN Silicon Expitaxial Planar Transistor for general purpose/ high voltage amplifier applications |
Semtech |
| 2525 |
2N5589 |
NPN planar RF transistor for FM mobile applications |
SGS Thomson Microelectronics |
| 2526 |
2N5590 |
NPN planar RF transistor for FM mobile applications |
SGS Thomson Microelectronics |
| 2527 |
2N5591 |
NPN silicon RF power transistor designed for VHF and 13.6V |
Motorola |
| 2528 |
2N5591 |
NPN planar RF transistor for FM mobile applications |
SGS Thomson Microelectronics |
| 2529 |
2N5630 |
Collector-emitter/base voltage: 120Vdc; 16Amp; high-voltage, high-power transistor. For high power audio amplifier applications and high voltage switching regulator circuits |
Motorola |
| 2530 |
2N5631 |
Collector-emitter/base voltage: 140Vdc; 16Amp; high-voltage, high-power transistor. For high power audio amplifier applications and high voltage switching regulator circuits |
Motorola |
| 2531 |
2N5664SMD |
NPN BIPOLAR TRANSISTOR IN A CERAMIC SURFACE MOUNT PACKAGE FOR HIGH REL APPLICATIONS |
SemeLAB |
| 2532 |
2N5829 |
RF PNP transistor for UHF low noise amplifier |
IPRS Baneasa |
| 2533 |
2N5835 |
RF NPN transistor for UHF amplifier |
IPRS Baneasa |
| 2534 |
2N5836 |
RF NPN transistor for power UHF amplifier |
IPRS Baneasa |
| 2535 |
2N5837 |
RF NPN transistor for power UHF amplifier |
IPRS Baneasa |
| 2536 |
2N5875 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 2537 |
2N5876 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 2538 |
2N5877 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 2539 |
2N5878 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 2540 |
2N5913 |
Silicon NPN Overalay RF Transistor, 12.5 Volt, for class-C VHF/UHF amplifiers |
RCA Solid State |
| 2541 |
2N5944 |
450-512MHz CLASS C 12.5V NPN transistor for mobile applications |
SGS Thomson Microelectronics |
| 2542 |
2N5945 |
Application Note - Microstrip design techniques for UHF amplifiers |
Motorola |
| 2543 |
2N5945 |
450-512MHz CLASS C 12.5V 4W NPN RF transistor for mobile applications |
SGS Thomson Microelectronics |
| 2544 |
2N5946 |
Application Note - Microstrip design techniques for UHF amplifiers |
Motorola |
| 2545 |
2N5946 |
450-512MHz CLASS C 12.5V 10W NPN RF transistor for mobile applications |
SGS Thomson Microelectronics |
| 2546 |
2N5995 |
7W, (CW) 175-MHz Silicon NPN Overlay RF Transistor for 12.5 Volt applications in VHF |
RCA Solid State |
| 2547 |
2N6030 |
Collector-emitter/base voltage: 120Vdc; 16Amp; high-voltage, high-power transistor. For high power audio amplifier applications and high voltage switching regulator circuits |
Motorola |
| 2548 |
2N6031 |
Collector-emitter/base voltage: 140Vdc; 16Amp; high-voltage, high-power transistor. For high power audio amplifier applications and high voltage switching regulator circuits |
Motorola |
| 2549 |
2N6034 |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
| 2550 |
2N6035 |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
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