| No. |
Part Name |
Description |
Manufacturer |
| 2581 |
2N654 |
PNP Germanium transistor, for high-gain amplifier and switching service in the audio frequency range |
Motorola |
| 2582 |
2N655 |
PNP Germanium transistor, for high-gain amplifier and switching service in the audio frequency range |
Motorola |
| 2583 |
2N6551 |
Complementary Silicon Transistors manufactured by the epitaial planar process designed for general purpose audio amplifier |
Central Semiconductor |
| 2584 |
2N6552 |
Complementary Silicon Transistors manufactured by the epitaial planar process designed for general purpose audio amplifier |
Central Semiconductor |
| 2585 |
2N6553 |
Complementary Silicon Transistors manufactured by the epitaial planar process designed for general purpose audio amplifier |
Central Semiconductor |
| 2586 |
2N6554 |
Complementary Silicon Transistors manufactured by the epitaial planar process designed for general purpose audio amplifier |
Central Semiconductor |
| 2587 |
2N6555 |
Complementary Silicon Transistors manufactured by the epitaial planar process designed for general purpose audio amplifier |
Central Semiconductor |
| 2588 |
2N6556 |
Complementary Silicon Transistors manufactured by the epitaial planar process designed for general purpose audio amplifier |
Central Semiconductor |
| 2589 |
2N6619 |
12 V, 30 mA, NPN silicon transistor for low-noise RF broadband amplifier and high-speed switching application |
Siemens |
| 2590 |
2N6620 |
NPN SILICON TRANSISTOR FOR LOW NOISE RF BROADBAND AMPLIFIER |
Siemens |
| 2591 |
2N669 |
PNP germanium power transistor for economical power switching circuits and commercial grade power amplifier applications |
Motorola |
| 2592 |
2N696 |
NPN silicon annular transistor designed for small-signal amplifier |
Motorola |
| 2593 |
2N697 |
NPN silicon epitaxy planar transistor for amplifier and switch applications (in german) |
ITT Semiconductors |
| 2594 |
2N697 |
NPN silicon annular transistor designed for small-signal amplifier |
Motorola |
| 2595 |
2N697 |
NPN Silicon Transistor for high level audio applications |
Newmarket Transistors NKT |
| 2596 |
2N699 |
NPN silicon annular transistor designed for medium-current switching and amplifier applications |
Motorola |
| 2597 |
2N700 |
PNP germanium mesa transistor for oscillator, frequency multiplier, wide-band mixer and wide-band amplifier applications |
Motorola |
| 2598 |
2N700A |
PNP germanium mesa transistor for oscillator, frequency multiplier, wide-band mixer and wide-band amplifier applications |
Motorola |
| 2599 |
2N705 |
PNP germanium mesa transistor for high-speed switching applications |
Motorola |
| 2600 |
2N706 |
Silicon NPN epitaxial planar transistor for high speed switching |
AEG-TELEFUNKEN |
| 2601 |
2N706 |
NPN Silicon transistor for switching applications |
IPRS Baneasa |
| 2602 |
2N706 |
Silicon Switching Transistor, for improved performance see ITT 2N2368 |
ITT Semiconductors |
| 2603 |
2N706 |
NPN silicon annular switching transistor for high-speed switching applications |
Motorola |
| 2604 |
2N706 |
NPN Silicon Planar Transistor for high speed switching and high frequency use |
Newmarket Transistors NKT |
| 2605 |
2N706A |
Silicon Switching Transistor, for improved performance see ITT 2N2368 |
ITT Semiconductors |
| 2606 |
2N706A |
NPN silicon annular switching transistor for high-speed switching applications |
Motorola |
| 2607 |
2N706A |
NPN Silicon Planar Transistor for high speed switching and high frequency use |
Newmarket Transistors NKT |
| 2608 |
2N706B |
Silicon Switching Transistor, for improved performance see ITT 2N2368 |
ITT Semiconductors |
| 2609 |
2N706B |
NPN silicon annular switching transistor for high-speed switching applications |
Motorola |
| 2610 |
2N707 |
NPN silicon epitaxial mesa transistor for VHF oscillator and class C amplifier applications |
Motorola |
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