| No. |
Part Name |
Description |
Manufacturer |
| 2671 |
2N956 |
NPN silicon annular Star transistor for high-speed switching and DC to UHF amplifier applications |
Motorola |
| 2672 |
2N960 |
PNP germanium epitaxial mesa transistors for high-speed switching applications |
Motorola |
| 2673 |
2N961 |
PNP germanium epitaxial mesa transistors for high-speed switching applications |
Motorola |
| 2674 |
2N962 |
PNP germanium epitaxial mesa transistors for high-speed switching applications |
Motorola |
| 2675 |
2N963 |
PNP germanium epitaxial mesa transistor for high-speed switching applications |
Motorola |
| 2676 |
2N964 |
PNP germanium epitaxial mesa transistors for high-speed switching applications |
Motorola |
| 2677 |
2N964A |
PNP germanium epitaxial mesa transistor for high-speed switching applications |
Motorola |
| 2678 |
2N965 |
PNP germanium epitaxial mesa transistors for high-speed switching applications |
Motorola |
| 2679 |
2N966 |
PNP germanium epitaxial mesa transistors for high-speed switching applications |
Motorola |
| 2680 |
2N967 |
PNP germanium epitaxial mesa transistor for high-speed switching applications |
Motorola |
| 2681 |
2N968 |
PNP germanium mesa transistor for high-speed switching applications |
Motorola |
| 2682 |
2N969 |
PNP germanium mesa transistor for high-speed switching applications |
Motorola |
| 2683 |
2N970 |
PNP germanium mesa transistor for high-speed switching applications |
Motorola |
| 2684 |
2N971 |
PNP germanium mesa transistor for high-speed switching applications |
Motorola |
| 2685 |
2N972 |
PNP germanium mesa transistor for high-speed switching applications |
Motorola |
| 2686 |
2N973 |
PNP germanium mesa transistor for high-speed switching applications |
Motorola |
| 2687 |
2N974 |
PNP germanium mesa transistor for high-speed switching applications |
Motorola |
| 2688 |
2N975 |
PNP germanium mesa transistor for high-speed switching applications |
Motorola |
| 2689 |
2N985 |
PNP germanium epitaxial mesa transistor for high-speed switching applications |
Motorola |
| 2690 |
2N995 |
PNP silicon transistor for high-frequency |
Motorola |
| 2691 |
2NZ70 |
Zener diode for stabilisation |
Tesla Elektronicke |
| 2692 |
2SA1007 |
Silicon epitaxial transistor built in emitter balast resistors, designed for use in high power high fidelity audio amplifier applications |
NEC |
| 2693 |
2SA1007A |
Silicon epitaxial transistor built in emitter balast resistors, designed for use in high power high fidelity audio amplifier applications |
NEC |
| 2694 |
2SA1090 |
Silicon PNP epitaxial transistor (PCT Process) for industrial applications |
TOSHIBA |
| 2695 |
2SA1094 |
Silicon PNP epitaxial transistor, for power amplifier applications |
TOSHIBA |
| 2696 |
2SA12 |
Germanium PNP Alloyed Junction Transistor, intended for use in 455kHz intermediate frequency amplifier |
Hitachi Semiconductor |
| 2697 |
2SA1220 |
PNP silicon transistor for audio frequency and high frequency power amplifier applications |
NEC |
| 2698 |
2SA1220A |
PNP silicon transistor for audio frequency and high frequency power amplifier applications |
NEC |
| 2699 |
2SA1221 |
PNP SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS |
NEC |
| 2700 |
2SA1222 |
PNP SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS |
NEC |
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