| No. |
Part Name |
Description |
Manufacturer |
| 2731 |
2SA1884 |
1.2W PACKAGE POWER TAPED TRANSISTOR DESIGNED FOR USE WITH AN AUTOMATIC PLACEMENT MECHINE |
ROHM |
| 2732 |
2SA18H |
Germanium PNP Alloyed Junction Transistor, intended for use in Medium Speed Switching |
Hitachi Semiconductor |
| 2733 |
2SA1902 |
1.2W PACKAGE POWER TAPED TRANSISTOR DESIGNED FOR USE WITH AN AUTOMATIC PLACEMENT MECHINE |
ROHM |
| 2734 |
2SA1903 |
1.2W PACKAGE POWER TAPED TRANSISTOR DESIGNED FOR USE WITH AN AUTOMATIC PLACEMENT MECHINE |
ROHM |
| 2735 |
2SA1943N |
Power transistor for high-speed switching applications |
TOSHIBA |
| 2736 |
2SA1977-L |
Transistor for amplifying PNP micro wave |
NEC |
| 2737 |
2SA1977-T1 |
Transistor for amplifying PNP micro wave |
NEC |
| 2738 |
2SA1977-T1B |
Transistor for amplifying PNP micro wave |
NEC |
| 2739 |
2SA2034 |
Power transistor for high-speed switching applications |
TOSHIBA |
| 2740 |
2SA2120 |
Power transistor for high-speed switching applications |
TOSHIBA |
| 2741 |
2SA2121 |
Power transistor for high-speed switching applications |
TOSHIBA |
| 2742 |
2SA2142 |
Power transistor for high-speed switching applications |
TOSHIBA |
| 2743 |
2SA2154CT |
Transistor for low frequency small-signal amplification |
TOSHIBA |
| 2744 |
2SA2154MFV |
Transistor for low frequency small-signal amplification |
TOSHIBA |
| 2745 |
2SA2183 |
Power transistor for high-speed switching applications |
TOSHIBA |
| 2746 |
2SA2184 |
Power transistor for high-speed switching applications |
TOSHIBA |
| 2747 |
2SA2195 |
Transistor for low frequency small-signal amplification |
TOSHIBA |
| 2748 |
2SA2214 |
Transistor for low frequency small-signal amplification |
TOSHIBA |
| 2749 |
2SA2215 |
Transistor for low frequency small-signal amplification |
TOSHIBA |
| 2750 |
2SA2220 |
Power transistor for high-speed switching applications |
TOSHIBA |
| 2751 |
2SA234 |
Germanium Transistor PNP MESA, intended for use in FM Intermediate Frequency Amplifier, SW Frequency Converter |
Hitachi Semiconductor |
| 2752 |
2SA235 |
Germanium Transistor PNP MESA, intended for use in FM RF Amplifier, Frequency Converter |
Hitachi Semiconductor |
| 2753 |
2SA3331R |
NPN transistor for AF amplifies applications, 60V, 0.2A |
SANYO |
| 2754 |
2SA3331S |
NPN transistor for AF amplifies applications, 60V, 0.2A |
SANYO |
| 2755 |
2SA3331T |
NPN transistor for AF amplifies applications, 60V, 0.2A |
SANYO |
| 2756 |
2SA3331U |
NPN transistor for AF amplifies applications, 60V, 0.2A |
SANYO |
| 2757 |
2SA3331V |
NPN transistor for AF amplifies applications, 60V, 0.2A |
SANYO |
| 2758 |
2SA350 |
Germanium PNP Transistor Drift Junction, intended for use in SW RF Amplifier, Oscillator, FM IF Amplifier |
Hitachi Semiconductor |
| 2759 |
2SA351 |
Germanium PNP Transistor Drift Junction, intended for use in SW Oscillator, Frequency Converter |
Hitachi Semiconductor |
| 2760 |
2SA352 |
Germanium PNP Transistor Drift Junction, intended for use in SW Mixer |
Hitachi Semiconductor |
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