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Datasheets for CHANNEL ENHANCEM

Datasheets found :: 5405
Page: | 81 | 82 | 83 | 84 | 85 | 86 | 87 | 88 | 89 |
No. Part Name Description Manufacturer
2521 IRF233 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 8.0A. General Electric Solid State
2522 IRF233 MOSPOWER N-Channel Enhancement Mode Transistor 150V 8A Siliconix
2523 IRF240 MOSPOWER N-Channel Enhancement Mode Transistor 200V 18A Siliconix
2524 IRF241 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 18A. General Electric Solid State
2525 IRF241 MOSPOWER N-Channel Enhancement Mode Transistor 150V 18A Siliconix
2526 IRF242 MOSPOWER N-Channel Enhancement Mode Transistor 200V 16A Siliconix
2527 IRF243 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 16A. General Electric Solid State
2528 IRF243 MOSPOWER N-Channel Enhancement Mode Transistor 150V 16A Siliconix
2529 IRF250 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 30A. General Electric Solid State
2530 IRF250 MOSPOWER N-Channel Enhancement Mode Transistor 200V 30A Siliconix
2531 IRF251 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 30A. General Electric Solid State
2532 IRF251 MOSPOWER N-Channel Enhancement Mode Transistor 150V 30A Siliconix
2533 IRF252 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 25A. General Electric Solid State
2534 IRF252 MOSPOWER N-Channel Enhancement Mode Transistor 200V 25A Siliconix
2535 IRF253 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 25A. General Electric Solid State
2536 IRF253 MOSPOWER N-Channel Enhancement Mode Transistor 150V 25A Siliconix
2537 IRF320 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 400V. Continuous drain current(at Tc 25deg) 3.0A. General Electric Solid State
2538 IRF321 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 350V. Continuous drain current(at Tc 25deg) 3.0A. General Electric Solid State
2539 IRF322 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 400V. Continuous drain current(at Tc 25deg) 2.5A. General Electric Solid State
2540 IRF323 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 350V. Continuous drain current(at Tc 25deg) 2.5A. General Electric Solid State
2541 IRF330 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 400V. Continuous drain current(at Tc 25deg) 5.5A. General Electric Solid State
2542 IRF330 MOSPOWER N-Channel Enhancement Mode Transistor 400V 5.5A Siliconix
2543 IRF331 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 350V. Continuous drain current(at Tc 25deg) 5.5A. General Electric Solid State
2544 IRF331 MOSPOWER N-Channel Enhancement Mode Transistor 350V 5.5A Siliconix
2545 IRF332 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 400V. Continuous drain current(at Tc 25deg) 4.5A. General Electric Solid State
2546 IRF332 MOSPOWER N-Channel Enhancement Mode Transistor 400V 4.5A Siliconix
2547 IRF333 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 350V. Continuous drain current(at Tc 25deg) 4.5A. General Electric Solid State
2548 IRF333 MOSPOWER N-Channel Enhancement Mode Transistor 350V 4.5A Siliconix
2549 IRF340 MOSPOWER N-Channel Enhancement Mode Transistor 400V 10A Siliconix
2550 IRF341 MOSPOWER N-Channel Enhancement Mode Transistor 350V 10A Siliconix


Datasheets found :: 5405
Page: | 81 | 82 | 83 | 84 | 85 | 86 | 87 | 88 | 89 |



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