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Datasheets for CHANNEL ENHANCEM

Datasheets found :: 5405
Page: | 85 | 86 | 87 | 88 | 89 | 90 | 91 | 92 | 93 |
No. Part Name Description Manufacturer
2641 IRF542 MOSPOWER N-Channel Enhancement Mode Transistor 100V 24A Siliconix
2642 IRF543 MOSPOWER N-Channel Enhancement Mode Transistor 60V 24A Siliconix
2643 IRF610 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 2.5A. General Electric Solid State
2644 IRF610 MOSPOWER N-Channel Enhancement Mode Transistor 200V 2.5A Siliconix
2645 IRF611 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 2.5A. General Electric Solid State
2646 IRF611 MOSPOWER N-Channel Enhancement Mode Transistor 150V 2.5A Siliconix
2647 IRF612 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 2.0A. General Electric Solid State
2648 IRF612 MOSPOWER N-Channel Enhancement Mode Transistor 200V 2A Siliconix
2649 IRF613 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 2.0A. General Electric Solid State
2650 IRF613 MOSPOWER N-Channel Enhancement Mode Transistor 150V 2A Siliconix
2651 IRF620 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 5.0A. General Electric Solid State
2652 IRF620 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS SGS Thomson Microelectronics
2653 IRF620 N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS SGS Thomson Microelectronics
2654 IRF620 MOSPOWER N-Channel Enhancement Mode Transistor 200V 5A Siliconix
2655 IRF620FI N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS SGS Thomson Microelectronics
2656 IRF620FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS SGS Thomson Microelectronics
2657 IRF621 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 5.0A. General Electric Solid State
2658 IRF621 MOSPOWER N-Channel Enhancement Mode Transistor 150V 5A Siliconix
2659 IRF622 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 4.0A. General Electric Solid State
2660 IRF622 MOSPOWER N-Channel Enhancement Mode Transistor 200V 4A Siliconix
2661 IRF623 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 4.0A. General Electric Solid State
2662 IRF623 MOSPOWER N-Channel Enhancement Mode Transistor 150V 4A Siliconix
2663 IRF630 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 9.0A. General Electric Solid State
2664 IRF630 MOSPOWER N-Channel Enhancement Mode Transistor 200V 9A Siliconix
2665 IRF631 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 9.0A. General Electric Solid State
2666 IRF631 MOSPOWER N-Channel Enhancement Mode Transistor 150V 9A Siliconix
2667 IRF632 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 8.0A. General Electric Solid State
2668 IRF632 MOSPOWER N-Channel Enhancement Mode Transistor 200V 8A Siliconix
2669 IRF633 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 8.0A. General Electric Solid State
2670 IRF633 MOSPOWER N-Channel Enhancement Mode Transistor 150V 8A Siliconix


Datasheets found :: 5405
Page: | 85 | 86 | 87 | 88 | 89 | 90 | 91 | 92 | 93 |



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