| No. |
Part Name |
Description |
Manufacturer |
| 2581 |
SB02-03C |
30V, 200mA Rectifier Shottky Barrier Diode |
SANYO |
| 2582 |
SB02-03Q |
Schottky Barrier Diode 30V, 200mA Rectifier |
SANYO |
| 2583 |
SB02-03S |
Schottky Barrier Diode 30V, 200mA Rectifier |
SANYO |
| 2584 |
SB02-09CP |
90V, 200mA Rectifier Shottky Barrier Diode |
SANYO |
| 2585 |
SB02-09NP |
90V, 200mA Rectifier Shottky Barrier Diode |
SANYO |
| 2586 |
SB02-15 |
150V, 200mA Rectifier Shottky Barrier Diode |
SANYO |
| 2587 |
SB02W03C |
Schottky Barrier Diode (Twin Type � Cathode Common) 30V, 200mA Rectifier |
SANYO |
| 2588 |
SB02W03S |
Schottky Barrier Diode (Twin Type � Cathode Common) 30V, 200mA Rectifier |
SANYO |
| 2589 |
SBE803 |
90V, 200mA Rectifier |
SANYO |
| 2590 |
SC141B |
TRIACs 6 Amperes RMS, 200V |
Motorola |
| 2591 |
SC143B |
TRIACs 8 Amperes RMS, 200V |
Motorola |
| 2592 |
SC146B |
TRIACs 10 Amperes RMS, 200V |
Motorola |
| 2593 |
SC149B |
TRIACs 12 Amperes RMS, 200V |
Motorola |
| 2594 |
SDB103 |
1.0A, 200V ultra fast recovery rectifier |
MCC |
| 2595 |
SDB153L |
1.5A, 200V ultra fast recovery rectifier |
MCC |
| 2596 |
SF502GP |
5.0A, 200V ultra fast recovery rectifier |
MCC |
| 2597 |
SFT2010 |
100 V, 200 A high energy NPN transistor |
Solid State Devices Inc |
| 2598 |
SFT2012 |
120 V, 200 A high energy NPN transistor |
Solid State Devices Inc |
| 2599 |
SFT2014 |
140 V, 200 A high energy NPN transistor |
Solid State Devices Inc |
| 2600 |
SGSP217 |
N-channel power MOS transistor, 200V, 6A |
SGS Thomson Microelectronics |
| 2601 |
SGSP317 |
N-channel power MOS transistor, 200V, 6A |
SGS Thomson Microelectronics |
| 2602 |
SGSP517 |
N-channel power MOS transistor, 200V, 6A |
SGS Thomson Microelectronics |
| 2603 |
SIDC110D170H |
Diodes - HV Chips - SIDC110D170H, 1700V, 200A |
Infineon |
| 2604 |
SIDC81D60E6 |
Diodes - HV Chips - SIDC81D60E6, 600V, 200A |
Infineon |
| 2605 |
SIGC156T60NR2C |
IGBTs - HV Chips - SIGC156T60NR2C, 600V, 200A |
Infineon |
| 2606 |
SIGC156T60SNR2C |
IGBTs - HV Chips - SIGC156T60SNR2C, 600V, 200A |
Infineon |
| 2607 |
SMF5.0AT1 |
Transient Voltage Suppressor, 200 Watt |
ON Semiconductor |
| 2608 |
SMJ4256-20FV |
262144-bit dynamic random-access memory, 200ns |
Texas Instruments |
| 2609 |
SMJ4256-20JD |
262144-bit dynamic random-access memory, 200ns |
Texas Instruments |
| 2610 |
SPD07N20 |
Low Voltage MOSFETs - Power MOSFET, 200V, DPAK, RDSon=0.4 Ohm, 7.0A, NL |
Infineon |
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