| No. |
Part Name |
Description |
Manufacturer |
| 2611 |
SPT5510 |
16-BIT, 200 MWPS ECL D/A CONVERTER |
Fairchild Semiconductor |
| 2612 |
SPT5510SIM |
16-bit, 200 MWPS ECL D/A converter |
SPT Signal Processing Technologies |
| 2613 |
SPT7720SIT |
8-bit, 200 MSPS A/D converter |
SPT Signal Processing Technologies |
| 2614 |
SRA253 |
25A, 200V ultra fast recovery rectifier |
MCC |
| 2615 |
STD150 ASIC |
Introduction(Jan. 22, 2002) |
Samsung Electronic |
| 2616 |
STD150 ASIC |
Characteristics(Jan. 22, 2002) |
Samsung Electronic |
| 2617 |
STD150 ASIC |
PLL2108X (Jan. 17, 2002) |
Samsung Electronic |
| 2618 |
STDL130 ASIC |
Version 1.0 (1'st edition - Jan. 9th, 2001) |
Samsung Electronic |
| 2619 |
STH320N4F6-2 |
N-channel 40 V, 1.1 mOhm typ., 200 A STripFET(TM) VI DeepGATE(TM) Power MOSFET in H2PAK-2 package |
ST Microelectronics |
| 2620 |
STH320N4F6-6 |
N-channel 40 V, 1.1 mOhm typ., 200 A STripFET(TM) VI DeepGATE(TM) Power MOSFET in H2PAK-6 package |
ST Microelectronics |
| 2621 |
STM32F756NG |
High-performance and DSP with FPU, ARM Cortex-M7 MCU with 1 Mbytes Flash, 200 MHz CPU, Art Accelerator, L1 cache, HW crypto, SDRAM, TFT |
ST Microelectronics |
| 2622 |
STM32F756NGH6 |
High-performance and DSP with FPU, ARM Cortex-M7 MCU with 1 Mbytes Flash, 200 MHz CPU, Art Accelerator, L1 cache, HW crypto, SDRAM, TFT |
ST Microelectronics |
| 2623 |
STV240N75F3 |
N-channel 75 V, 3 mOhm typ., 200 A STripFET F3 Power MOSFET in PowerSO-10 package |
ST Microelectronics |
| 2624 |
T2801B |
TRIACs 6 Amperes RMS, 200V |
Motorola |
| 2625 |
T620022004DN |
200V, 200A phase control single thyristor |
Powerex Power Semiconductors |
| 2626 |
T620042004DN |
400V, 200A phase control single thyristor |
Powerex Power Semiconductors |
| 2627 |
T620062004DN |
600V, 200A phase control single thyristor |
Powerex Power Semiconductors |
| 2628 |
T620082004DN |
800V, 200A phase control single thyristor |
Powerex Power Semiconductors |
| 2629 |
T620102004DN |
1000V, 200A phase control single thyristor |
Powerex Power Semiconductors |
| 2630 |
T620122004DN |
1200V, 200A phase control single thyristor |
Powerex Power Semiconductors |
| 2631 |
T620142004DN |
1400V, 200A phase control single thyristor |
Powerex Power Semiconductors |
| 2632 |
T620162004DN |
1600V, 200A phase control single thyristor |
Powerex Power Semiconductors |
| 2633 |
T7S00255 |
Phase control SCR. 550A, 200V. |
Powerex Power Semiconductors |
| 2634 |
T7S00265 |
Phase control SCR. 650A, 200V. |
Powerex Power Semiconductors |
| 2635 |
T7S00275 |
Phase control SCR. 750A, 200V. |
Powerex Power Semiconductors |
| 2636 |
T7S02055 |
Phase control SCR. 550A, 2000V. |
Powerex Power Semiconductors |
| 2637 |
T7S02065 |
Phase control SCR. 650A, 2000V. |
Powerex Power Semiconductors |
| 2638 |
T7S02075 |
Phase control SCR. 750A, 2000V. |
Powerex Power Semiconductors |
| 2639 |
TC1266 |
The TC1266 is an application-specific, low dropout regulator (LDO) specifically intended for use in PCI peripheral card applications complying with PCI Power Management (PCI 2.0). It provides an uninterrupted, 3.3V, 200mA (max) output volt |
Microchip |
| 2640 |
TC54256AF |
32768 word x 8-bit CMOC one time programmable read only memory, 200ns |
TOSHIBA |
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