| No. |
Part Name |
Description |
Manufacturer |
| 2581 |
2SC1213AD |
NPN transistor for Low frequency amplifier, 50V, 500mA |
Hitachi Semiconductor |
| 2582 |
2SC1213AD |
NPN transistor for low frequency amplifier, 50V, 500mA |
Renesas |
| 2583 |
2SC1213AKB |
NPN transistor for Low frequency amplifier, 50V, 500mA |
Hitachi Semiconductor |
| 2584 |
2SC1213AKB |
NPN transistor for low frequency amplifier, 50V, 500mA |
Renesas |
| 2585 |
2SC1213AKC |
NPN transistor for Low frequency amplifier, 50V, 500mA |
Hitachi Semiconductor |
| 2586 |
2SC1213AKC |
NPN transistor for low frequency amplifier, 50V, 500mA |
Renesas |
| 2587 |
2SC1213AKD |
NPN transistor for Low frequency amplifier, 50V, 500mA |
Hitachi Semiconductor |
| 2588 |
2SC1213AKD |
NPN transistor for low frequency amplifier, 50V, 500mA |
Renesas |
| 2589 |
2SC1213B |
NPN transistor for Low frequency amplifier, 50V, 500mA |
Hitachi Semiconductor |
| 2590 |
2SC1213B |
NPN transistor for low frequency amplifier, 50V, 500mA |
Renesas |
| 2591 |
2SC1213C |
NPN transistor for Low frequency amplifier, 50V, 500mA |
Hitachi Semiconductor |
| 2592 |
2SC1213C |
NPN transistor for low frequency amplifier, 50V, 500mA |
Renesas |
| 2593 |
2SC1213D |
NPN transistor for Low frequency amplifier, 50V, 500mA |
Hitachi Semiconductor |
| 2594 |
2SC1213D |
NPN transistor for low frequency amplifier, 50V, 500mA |
Renesas |
| 2595 |
2SC1222 |
NPN silicon transistor designed for use in AF low noise amplifier |
NEC |
| 2596 |
2SC1325A |
NPN silicon triple diffused MESA transistor, horizontal deflection output for color TV |
NEC |
| 2597 |
2SC1358 |
NPN silicon triple diffused MESA transistor, horizontal deflection output for color TV |
NEC |
| 2598 |
2SC1380 |
Silicon NPN epitaxial transistor (PCT Process) for industrial applications |
TOSHIBA |
| 2599 |
2SC1380A |
Silicon NPN epitaxial transistor (PCT Process) for industrial applications |
TOSHIBA |
| 2600 |
2SC1399 |
NPN silicon transistor, designed for use in driver stage of AF amplifier and low speed switching |
NEC |
| 2601 |
2SC1400 |
NPN silicon transistor designed for use in AF low noise amplifier of a high-class STEREO-SET |
NEC |
| 2602 |
2SC1424 |
Marking for NE73412 part number, 12 NEC (TO-72) package |
NEC |
| 2603 |
2SC150T |
Silicon NPN Transistor Low Temperature Passivation, intended for use in 27MHz Transceiver Power Output |
Hitachi Semiconductor |
| 2604 |
2SC151H |
Silicon NPN Epitaxial LTP Transistor, intended for use in RF Amplifier, Medium Speed Switching |
Hitachi Semiconductor |
| 2605 |
2SC152H |
Silicon NPN Epitaxial LTP Transistor, intended for use in RF Amplifier, Medium Speed Switching |
Hitachi Semiconductor |
| 2606 |
2SC154C |
Silicon NPN Transistor Triple Diffused Low Temperature Passivation, intended for use in High Voltage and Wide bandwidth video power output |
Hitachi Semiconductor |
| 2607 |
2SC154H |
Silicon NPN Triple Diffused LPT Transistor, intended for use in Wide Band Amplifier, High Voltage Switching |
Hitachi Semiconductor |
| 2608 |
2SC1688 |
For high-frequency amplification |
Panasonic |
| 2609 |
2SC1927 |
NPN SILICON EPITAXIAL DUAL TRANSISTOR FOR DIFFERENTIAL AMPLIFIER AND ULTRA HIGH SPEED SWITCHING INDUSTRIAL USE |
NEC |
| 2610 |
2SC1972 |
NPN EPITAXIAL PLANAR TYPE(for RF power amplifiers on VHF band Mobile radio applications) |
Mitsubishi Electric Corporation |
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