| No. |
Part Name |
Description |
Manufacturer |
| 2641 |
2SC283H |
Silicon NPN Epitaxial LTP Transistor, intended for use in RF Amplifier |
Hitachi Semiconductor |
| 2642 |
2SC284H |
Silicon NPN Epitaxial LTP, intended for use in Medium Speed Switching, High Voltage Switching |
Hitachi Semiconductor |
| 2643 |
2SC2878 |
Transistor Silicon NPN Epitaxial Type For Muting and Switching Applications |
TOSHIBA |
| 2644 |
2SC288A(I*B) |
2SC288A(I·B) NPN silicon epitaxial transistor DISK MOLD for UHF oscillator |
NEC |
| 2645 |
2SC2922 |
Transistor For Power Amplifier |
Sanken |
| 2646 |
2SC2951 |
The ASI 2SC2951 is a High Frequency Transistor Designed for General Purpose Oscillator Applications up to 10 GHz. |
Advanced Semiconductor |
| 2647 |
2SC2952 |
The 2SC2592 is a High Frequency Transistor Designed for General Purpose VHF-UHF Amplifier Applications. |
Advanced Semiconductor |
| 2648 |
2SC2954-T1 |
For amplify high frequency, low noise, and wide band. |
NEC |
| 2649 |
2SC2954-T2 |
For amplify high frequency, low noise, and wide band. |
NEC |
| 2650 |
2SC3087 |
NPN Bipolar Transistor for Switching Regulator Applications |
ON Semiconductor |
| 2651 |
2SC3090 |
NPN Triple Diffused Planar Silicon Transistor For Switching Regulators |
SANYO |
| 2652 |
2SC3112 |
Transistor Silicon NPN Epitaxial Type (PCT process) For Audio Amplifier and Switching Applications |
TOSHIBA |
| 2653 |
2SC3113 |
Transistor Silicon NPN Epitaxial Type For Audio Amplifier and Switching Applications |
TOSHIBA |
| 2654 |
2SC313 |
Silicon NPN Epitaxial Planar Transistor, intended for use in UHF Tuner Local Oscillator |
Hitachi Semiconductor |
| 2655 |
2SC3130 |
Small-signal device - Small-signal transistor - High-Frequency for Tuners |
Panasonic |
| 2656 |
2SC313H |
Silicon NPN Epitaxial Planar Transistor, intended for use in UHF Tuner Local Oscillator |
Hitachi Semiconductor |
| 2657 |
2SC3144 |
NPN Epitaxial Planar Silicon Darlington Transistors 60V/3A for High-Speed Drivers Applications |
SANYO |
| 2658 |
2SC3145 |
NPN Epitaxial Planar Silicon Darlington Transistors 60V/5A for High-Speed Drivers Applications |
SANYO |
| 2659 |
2SC3218-M |
NPN SILICON EPITAXIAL TRANSISTOR FOR 860 MHZ WIDEBAND POWER AMPLIFIER INDUSTRIAL USE |
NEC |
| 2660 |
2SC321H |
Silicon NPN Epitaxial Planar Transistor, intended for use in High Speed Switching |
Hitachi Semiconductor |
| 2661 |
2SC3247 |
FOR RELAY DRIVE POWER SUPPLY APPLICAITON SILICON NPN EPITAXIAL TYPE |
Isahaya Electronics Corporation |
| 2662 |
2SC3249 |
FOR SMALL TYPE COLOUR TV CHROMA OUTPUT APPLICATION |
Isahaya Electronics Corporation |
| 2663 |
2SC3269 |
1.2W PACKAGE POWER TAPED TRANSISTOR DESIGNED FOR USE WITH AN AUTOMATIC PLACEMENT MECHINE |
ROHM |
| 2664 |
2SC3269 |
Silicon NPN transistor for strobo flash applications and medium power amplifier applications |
TOSHIBA |
| 2665 |
2SC3292 |
NPN Planar Type Silicon Darlington Transistor For General-Purpose Drivers |
SANYO |
| 2666 |
2SC3326 |
Transistor Silicon NPN Epitaxial Type (PCT process) For Muting and Switching Applications |
TOSHIBA |
| 2667 |
2SC3327 |
TRANSISTOR SILICON NPN EPITAXIAL TYPE FOR MUTING AND SWITCHING APPLICATIONS |
TOSHIBA |
| 2668 |
2SC3329 |
Transistor Silicon NPN Epitaxial Type (PCT process) For Low Noise Audio Amplifier Applications and Recommended for The First Stages of MC Head Amplifiers |
TOSHIBA |
| 2669 |
2SC3329 |
Transistor Silicon NPN Epitaxial Type (PCT process) For Low Noise Audio Amplifier Applications and Recommended for The First Stages of MC Head Amplifiers |
TOSHIBA |
| 2670 |
2SC3351-L |
For amplify low noise and high frequency. |
NEC |
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