No. |
Part Name |
Description |
Manufacturer |
2611 |
HN1D02FU |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application |
TOSHIBA |
2612 |
HN1D03F |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application |
TOSHIBA |
2613 |
HN1D03FU |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application |
TOSHIBA |
2614 |
HN1J02FU |
Field Effect Transistor Silicon P Channel Mos Type High Speed Switching Applications Analog Switch Applications |
TOSHIBA |
2615 |
HN1K02FU |
Field Effect Transistor Silicon N Channel MOS Type High Speed Switching Applications Analog Switch Applications |
TOSHIBA |
2616 |
HN1K03FU |
Field Effect Transistor Silicon N Channel MOS Type High Speed Switching Applications Analog Switch Applications |
TOSHIBA |
2617 |
HN1K04FU |
Field Effect Transistor Silicon N Channel MOS Type High Speed Switching Applications Analog Switch Applications |
TOSHIBA |
2618 |
HN1K05FU |
Field Effect Transistor Silicon N Channel MOS Type For Portable Devices High Speed Switching Applications Interface Applications |
TOSHIBA |
2619 |
HN1K06FU |
Field Effect Transistor Silicon N Channel MOS Type High Speed Switching Applications Analog Switch Applications |
TOSHIBA |
2620 |
HN1L02FU |
Field Effect Transistor Silicon N-P Channel MOS Type High Speed Switching Applications Analog Switch Applications |
TOSHIBA |
2621 |
HN1L03FU |
Field Effect Transistor Silicon N-P Channel MOS Type High Speed Switching Applications Analog Switch Applications |
TOSHIBA |
2622 |
HN2D01F |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application |
TOSHIBA |
2623 |
HN2D01FU |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application |
TOSHIBA |
2624 |
HN2D02FU |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application |
TOSHIBA |
2625 |
HN2D02FUTW1T1 |
Ultra High Speed Switching Diodes |
ON Semiconductor |
2626 |
HN2S01F |
Diode Silicon Epitaxial Schottky Barrier Type Low Voltage High Speed Switching Application |
TOSHIBA |
2627 |
HN2S01FU |
Diode Silicon Epitaxial Schottky Barrier Type Low Voltage High Speed Switching Application |
TOSHIBA |
2628 |
HN4B101J |
Power transistor for high-speed switching applications |
TOSHIBA |
2629 |
HN4B102J |
Power transistor for high-speed switching applications |
TOSHIBA |
2630 |
HN4K03JU |
Field Effect Transistor Silicon N Channel MOS Type High Speed Switching Applications Analog Switch Applications |
TOSHIBA |
2631 |
HR1A4 |
On-chip resistor PNP silicon epitaxial transistor For mid-speed switching |
NEC |
2632 |
HR1XXX |
On-chip resistor PNP silicon epitaxial transistor For mid-speed switching |
NEC |
2633 |
HSB124 |
Silicon Epitaxial Planar Diode for High Speed Switching |
Hitachi Semiconductor |
2634 |
HSM221C |
Silicon Epitaxial Planar Diode for High Speed Switching |
Hitachi Semiconductor |
2635 |
HSM2838C |
Silicon Epitaxial Planar Diode for High Speed Switching |
Hitachi Semiconductor |
2636 |
ISL54205A |
MP3/USB 2.0 High Speed Switch with Negative Signal Handling |
Intersil |
2637 |
ISL54205B |
MP3/USB 2.0 High Speed Switch with Negative Signal Handling |
Intersil |
2638 |
ISL54206 |
MP3/USB 2.0 High Speed Switch with Negative Signal Handling |
Intersil |
2639 |
ISL54206A |
MP3/USB 2.0 High Speed Switch with Negative Signal Handling |
Intersil |
2640 |
ISL54209 |
MP3/USB 2.0 High Speed Switch with Negative Signal Handling and Low Power Shutdown |
Intersil |
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