No. |
Part Name |
Description |
Manufacturer |
2701 |
MA1702 |
PNP germanium transistor for audio amplifier and medium speed switching applications |
Motorola |
2702 |
MA1703 |
PNP germanium transistor for audio amplifier and medium speed switching applications |
Motorola |
2703 |
MA1704 |
PNP germanium transistor for audio amplifier and medium speed switching applications |
Motorola |
2704 |
MA1705 |
PNP germanium transistor for audio amplifier and medium speed switching applications |
Motorola |
2705 |
MA1706 |
PNP germanium transistor for audio amplifier and medium speed switching applications |
Motorola |
2706 |
MA1707 |
PNP germanium transistor for audio amplifier and medium speed switching applications |
Motorola |
2707 |
MA1708 |
PNP germanium transistor for audio amplifier and medium speed switching applications |
Motorola |
2708 |
MA881 |
PNP germanium transistor for audio amplifier and medium-speed switching applications |
Motorola |
2709 |
MA882 |
PNP germanium transistor for audio amplifier and medium-speed switching applications |
Motorola |
2710 |
MA883 |
PNP germanium transistor for audio amplifier and medium-speed switching applications |
Motorola |
2711 |
MA884 |
PNP germanium transistor for audio amplifier and medium-speed switching applications |
Motorola |
2712 |
MA885 |
PNP germanium transistor for audio amplifier and medium-speed switching applications |
Motorola |
2713 |
MA886 |
PNP germanium transistor for audio amplifier and medium-speed switching applications |
Motorola |
2714 |
MA887 |
PNP germanium transistor for audio amplifier and medium-speed switching applications |
Motorola |
2715 |
MA888 |
PNP germanium transistor for audio amplifier and medium-speed switching applications |
Motorola |
2716 |
MA889 |
PNP germanium transistor for audio amplifier and medium-speed switching applications |
Motorola |
2717 |
MC2831 |
Small signal diode. For high speed switching application. Silicon epitaxial type. Peak reverse voltage 75 V. |
Isahaya Electronics Corporation |
2718 |
MC2832 |
Small signal diode. For high speed switching application. Silicon epitaxial type. Peak reverse voltage 75 V. |
Isahaya Electronics Corporation |
2719 |
MC2833 |
Small signal diode. For high speed switching application. Silicon epitaxial type. Peak reverse voltage 75 V. |
Isahaya Electronics Corporation |
2720 |
MC2834 |
Small signal diode. For high speed switching application. Silicon epitaxial type. Peak reverse voltage 75 V. |
Isahaya Electronics Corporation |
2721 |
MC2837 |
Small signal diode. For high speed switching application. Silicon epitaxial type. Peak reverse voltage 85 V. |
Isahaya Electronics Corporation |
2722 |
MC2838 |
Small signal diode. For high speed switching application. Silicon epitaxial type. Peak reverse voltage 75 V. |
Isahaya Electronics Corporation |
2723 |
MC2839 |
Small signal diode. For high speed switching application. Silicon epitaxial type. Peak reverse voltage 85 V. |
Isahaya Electronics Corporation |
2724 |
MC2841 |
FOR HIGH SPEED SWITCHING APPLICATION SILICON EPITAXIAL TYPE |
Isahaya Electronics Corporation |
2725 |
MC2844 |
Small signal diode. For high speed switching application. Silicon epitaxial type. Peak reverse voltage 75 V. |
Isahaya Electronics Corporation |
2726 |
MC2845 |
Small signal diode. For high speed switching application. Silicon epitaxial type. Peak reverse voltage 35 V. |
Isahaya Electronics Corporation |
2727 |
MC2846 |
Small signal diode. For high speed switching application. Silicon epitaxial type. Peak reverse voltage 75 V. |
Isahaya Electronics Corporation |
2728 |
MC2848 |
FOR HIGH SPEED SWITCHING APPLICATION SILICON EPITAXIAL TYPE |
Isahaya Electronics Corporation |
2729 |
MC2852 |
Diode. For high speed switching application. Silicon epitaxial type. Peak reverse voltage 75 V. |
Isahaya Electronics Corporation |
2730 |
MC2854 |
Diode. For high speed switching application. Silicon epitaxial type. Peak reverse voltage 75 V. |
Isahaya Electronics Corporation |
| | | |