| No. |
Part Name |
Description |
Manufacturer |
| 2611 |
HMC491LP3 |
GaAs MMIC LOW NOISE AMPLIFIER w/ BYPASS MODE, 3.4 - 3.8 GHz |
Hittite Microwave Corporation |
| 2612 |
HR5A |
Silicon Diffused Junction Diode, Rectifier for Power Source |
Hitachi Semiconductor |
| 2613 |
HR5B |
Silicon Diffused Junction Diode, Rectifier for Power Source |
Hitachi Semiconductor |
| 2614 |
HS7067 |
7-Amp, Multimode, High Efficiency Switching Regulator |
National Semiconductor |
| 2615 |
HS7067CK |
10 V to 60 V, 7 A, multimode, high efficiency switching regulator |
National Semiconductor |
| 2616 |
HS7067K |
10 V to 60 V, 7 A, multimode, high efficiency switching regulator |
National Semiconductor |
| 2617 |
HS7107CK |
10 V to 100 V, 7 A, multimode, high efficiency switching regulator |
National Semiconductor |
| 2618 |
HS7107K |
10 V to 100 V, 7 A, multimode, high efficiency switching regulator |
National Semiconductor |
| 2619 |
HSDL-7001-100-100 |
IR 3,16 encode, decode IC |
Agilent (Hewlett-Packard) |
| 2620 |
HVDA541QDRQ1 |
Automotive Catalog 5-V CAN Transceiver with Standby mode, I/O Level Shifting and Supply Optimization 8-SOIC -40 to 125 |
Texas Instruments |
| 2621 |
IS-1009RH |
2.5V Shunt Regulator Diode, Rad-Hard |
Intersil |
| 2622 |
IS41C16256-25K |
256K x 16 (4-Mbit) DRAM with EDO page mode, 25ns |
ICSI |
| 2623 |
IS41C16256-25KI |
256K x 16 (4-Mbit) DRAM with EDO page mode, 25ns |
ICSI |
| 2624 |
IS41C16256-25T |
256K x 16 (4-Mbit) DRAM with EDO page mode, 25ns |
ICSI |
| 2625 |
IS41C16256-25TI |
256K x 16 (4-Mbit) DRAM with EDO page mode, 25ns |
ICSI |
| 2626 |
IS41C16256-35K |
256K x 16 (4-Mbit) DRAM with EDO page mode, 35ns |
ICSI |
| 2627 |
IS41C16256-35KI |
256K x 16 (4-Mbit) DRAM with EDO page mode, 35ns |
ICSI |
| 2628 |
IS41C16256-35T |
256K x 16 (4-Mbit) DRAM with EDO page mode, 35ns |
ICSI |
| 2629 |
IS41C16256-35TI |
256K x 16 (4-Mbit) DRAM with EDO page mode, 35ns |
ICSI |
| 2630 |
IS41C16256-50K |
256K x 16 (4-Mbit) DRAM with EDO page mode, 50ns |
ICSI |
| 2631 |
IS41C16256-50KI |
256K x 16 (4-Mbit) DRAM with EDO page mode, 50ns |
ICSI |
| 2632 |
IS41C16256-50T |
256K x 16 (4-Mbit) DRAM with EDO page mode, 50ns |
ICSI |
| 2633 |
IS41C16256-50TI |
256K x 16 (4-Mbit) DRAM with EDO page mode, 50ns |
ICSI |
| 2634 |
IS41C16256-60K |
256K x 16 (4-Mbit) DRAM with EDO page mode, 60ns |
ICSI |
| 2635 |
IS41C16256-60KI |
256K x 16 (4-Mbit) DRAM with EDO page mode, 60ns |
ICSI |
| 2636 |
IS41C16256-60T |
256K x 16 (4-Mbit) DRAM with EDO page mode, 60ns |
ICSI |
| 2637 |
IS41C16256-60TI |
256K x 16 (4-Mbit) DRAM with EDO page mode, 60ns |
ICSI |
| 2638 |
IS41LV16256-35K |
256K x 16 (4-Mbit) DRAM with EDO page mode, 35ns |
ICSI |
| 2639 |
IS41LV16256-35T |
256K x 16 (4-Mbit) DRAM with EDO page mode, 35ns |
ICSI |
| 2640 |
IS41LV16256-40K |
256K x 16 (4-Mbit) DRAM with edo page mode, 40ns |
Integrated Silicon Solution Inc |
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