| No. |
Part Name |
Description |
Manufacturer |
| 2671 |
J1N4449 |
Silicon signal diode, high speed switching (chips) |
SESCOSEM |
| 2672 |
J1N456 |
Silicon signal diode, general purpose (chips) |
SESCOSEM |
| 2673 |
J1N456A |
Silicon signal diode, general purpose (chips) |
SESCOSEM |
| 2674 |
J1N457 |
Silicon signal diode, general purpose (chips) |
SESCOSEM |
| 2675 |
J1N457A |
Silicon signal diode, general purpose (chips) |
SESCOSEM |
| 2676 |
JANTX1N4148UB |
Rectifier diode, 100V |
Microsemi |
| 2677 |
JANTX1N4148UB2 |
Rectifier diode, 100V |
Microsemi |
| 2678 |
JANTX1N4148UB2R |
Rectifier diode, 100V |
Microsemi |
| 2679 |
JANTX1N4148UBCA |
Rectifier diode, 100V |
Microsemi |
| 2680 |
JANTX1N4148UBCC |
Rectifier diode, 100V |
Microsemi |
| 2681 |
JANTX1N4148UBD |
Rectifier diode, 100V |
Microsemi |
| 2682 |
K1040R |
40A 100V Silicon Rectifier Diode, reverse polarity |
IPRS Baneasa |
| 2683 |
K1140R |
40A 1000V Silicon Rectifier Diode, reverse polarity |
IPRS Baneasa |
| 2684 |
K1615AC |
Miniature Selenium Diode, common cathode |
ITT Semiconductors |
| 2685 |
K1616AC |
Miniature Selenium Diode, doubler |
ITT Semiconductors |
| 2686 |
K1617AC |
Miniature Selenium Diode, common anode |
ITT Semiconductors |
| 2687 |
K214 |
Nom zener voltage:2.4V; 250mW; measured from 1000-3000Hz; low level zener diode, very low voltage, low leakage |
Knox Semiconductor Inc |
| 2688 |
K4040R |
40A 400V Silicon Rectifier Diode, reverse polarity |
IPRS Baneasa |
| 2689 |
K4F160411C-B50 |
4M x 4bit CMOS dynamic RAM with fast page mode, 5V, 50ns |
Samsung Electronic |
| 2690 |
K4F160411C-B60 |
4M x 4bit CMOS dynamic RAM with fast page mode, 5V, 60ns |
Samsung Electronic |
| 2691 |
K4F160411C-F50 |
4M x 4bit CMOS dynamic RAM with fast page mode, 5V, 50ns |
Samsung Electronic |
| 2692 |
K4F160411C-F60 |
4M x 4bit CMOS dynamic RAM with fast page mode, 5V, 60ns |
Samsung Electronic |
| 2693 |
K4F160412C-B50 |
4M x 4bit CMOS dynamic RAM with fast page mode, 3.3V, 50ns |
Samsung Electronic |
| 2694 |
K4F160412C-B60 |
4M x 4bit CMOS dynamic RAM with fast page mode, 3.3V, 60ns |
Samsung Electronic |
| 2695 |
K4F160412C-F50 |
4M x 4bit CMOS dynamic RAM with fast page mode, 3.3V, 50ns |
Samsung Electronic |
| 2696 |
K4F160412C-F60 |
4M x 4bit CMOS dynamic RAM with fast page mode, 3.3V, 60ns |
Samsung Electronic |
| 2697 |
K4F170411C-B50 |
4M x 4bit CMOS dynamic RAM with fast page mode, 5V, 50ns |
Samsung Electronic |
| 2698 |
K4F170411C-B60 |
4M x 4bit CMOS dynamic RAM with fast page mode, 5V, 60ns |
Samsung Electronic |
| 2699 |
K4F170411C-F50 |
4M x 4bit CMOS dynamic RAM with fast page mode, 5V, 50ns |
Samsung Electronic |
| 2700 |
K4F170411C-F60 |
4M x 4bit CMOS dynamic RAM with fast page mode, 5V, 60ns |
Samsung Electronic |
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