| No. |
Part Name |
Description |
Manufacturer |
| 2641 |
2KBP06M |
Glass Passivated Single-Phase Bridge Rectifier, Forward Current 2.0 A |
Vishay |
| 2642 |
2KBP06M |
2.0A GLASS PASSIVATED BRIDGE RECTIFIER |
Won-Top Electronics |
| 2643 |
2KBP086 |
2 AMP glass passivated silicon bridge rectifier |
COLLMER SEMICONDUCTOR INC |
| 2644 |
2KBP08G |
2 AMP GLASS PASSIVATED SILICON BRIDGE RECTIFIER |
Fuji Electric |
| 2645 |
2KBP08M |
GLASS PASSIVATED SINGLE-PHASE BRIDGE RECTIFIER |
General Semiconductor |
| 2646 |
2KBP08M |
IN-LINE GLASS PASSIVATED SINGLE PHASE RECTIFIER BRIDGE |
TRSYS |
| 2647 |
2KBP08M |
Glass Passivated Single-Phase Bridge Rectifier, Forward Current 2.0 A |
Vishay |
| 2648 |
2KBP08M |
2.0A GLASS PASSIVATED BRIDGE RECTIFIER |
Won-Top Electronics |
| 2649 |
2KBP10G |
2 AMP GLASS PASSIVATED SILICON BRIDGE RECTIFIER |
Fuji Electric |
| 2650 |
2KBP10M |
GLASS PASSIVATED SINGLE-PHASE BRIDGE RECTIFIER |
General Semiconductor |
| 2651 |
2KBP10M |
IN-LINE GLASS PASSIVATED SINGLE PHASE RECTIFIER BRIDGE |
TRSYS |
| 2652 |
2KBP10M |
Glass Passivated Single-Phase Bridge Rectifier, Forward Current 2.0 A |
Vishay |
| 2653 |
2KBP10M |
2.0A GLASS PASSIVATED BRIDGE RECTIFIER |
Won-Top Electronics |
| 2654 |
2KBPO1G |
2 AMP GLASS PASSIVATED SILICON BRIDGE RECTIFIER |
Fuji Electric |
| 2655 |
2KBPO2G |
2 AMP GLASS PASSIVATED SILICON BRIDGE RECTIFIER |
Fuji Electric |
| 2656 |
2KBPO4G |
2 AMP GLASS PASSIVATED SILICON BRIDGE RECTIFIER |
Fuji Electric |
| 2657 |
2KBPO6G |
2 AMP GLASS PASSIVATED SILICON BRIDGE RECTIFIER |
Fuji Electric |
| 2658 |
2KBPO86 |
2 AMP GLASS PASSIVATED SILICON BRIDGE RECTIFIER |
Fuji Electric |
| 2659 |
2KBPOO5G |
2 AMP GLASS PASSIVATED SILICON BRIDGE RECTIFIER |
Fuji Electric |
| 2660 |
2N3859 |
Planar epitaxial passivated NPN silicon transistor. 30V, 100mA. |
General Electric Solid State |
| 2661 |
2N3859A |
Planar epitaxial passivated NPN silicon transistor. 60V, 100mA. |
General Electric Solid State |
| 2662 |
2N3860 |
Planar epitaxial passivated NPN silicon transistor. 30V, 100mA. |
General Electric Solid State |
| 2663 |
2N3903 |
General purpose transistor. Collector-emitter voltage: Vceo = 40V. Collector-base voltage: Vcbo = 60V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
| 2664 |
2N3904 |
General purpose transistor. Collector-emitter voltage: Vceo = 40V. Collector-base voltage: Vcbo = 60V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
| 2665 |
2N3905 |
General purpose transistor. Collector-emitter voltage: Vceo = -40V. Collector-base voltage: Vcbo = -40V. Collector dissipation: Pc(max) = -625mW. |
USHA India LTD |
| 2666 |
2N3906 |
General purpose transistor. Collector-emitter voltage: Vceo = -40V. Collector-base voltage: Vcbo = -40V. Collector dissipation: Pc(max) = -625mW. |
USHA India LTD |
| 2667 |
2N4123 |
Planar epitaxial passivated NPN silicon transistor. 30V, 200mA. |
General Electric Solid State |
| 2668 |
2N4123 |
General purpose transistor. Collector-emitter voltage: Vceo = 30V. Collector-base voltage: Vcbo = 40V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
| 2669 |
2N4124 |
Planar epitaxial passivated NPN silicon transistor. 25V, 200mA. |
General Electric Solid State |
| 2670 |
2N4124 |
General purpose transistor. Collector-emitter voltage: Vceo = 25V. Collector-base voltage: Vcbo = 30V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
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