| No. |
Part Name |
Description |
Manufacturer |
| 2671 |
2N4125 |
Planar epitaxial passivated PNP silicon transistor. -30V, 200mA. |
General Electric Solid State |
| 2672 |
2N4125 |
Amplifier transistor. Collector-emitter voltage: Vceo = -30V. Collector-base voltage: Vcbo = -30V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
| 2673 |
2N4126 |
Planar epitaxial passivated PNP silicon transistor. -25V, 200mA. |
General Electric Solid State |
| 2674 |
2N4126 |
Amplifier transistor. Collector-emitter voltage: Vceo = -25V. Collector-base voltage: Vcbo = -25V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
| 2675 |
2N4400 |
Planar epitaxial passivated NPN silicon transistor. 40V, 600mA. |
General Electric Solid State |
| 2676 |
2N4400 |
General purpose transistor. Collector-emitter voltage: Vceo = 40V. Collector-base voltage: Vcbo = 60V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
| 2677 |
2N4401 |
Planar epitaxial passivated NPN silicon transistor. 40V, 600mA. |
General Electric Solid State |
| 2678 |
2N4401 |
General purpose transistor. Collector-emitter voltage: Vceo = 40V. Collector-base voltage: Vcbo = 60V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
| 2679 |
2N4402 |
Planar epitaxial passivated PNP silicon transistor. -40V, -600mA. |
General Electric Solid State |
| 2680 |
2N4402 |
General purpose transistor. Collector-emitter voltage: Vceo = -40V. Collector-base voltage: Vcbo = -40V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
| 2681 |
2N4403 |
Planar epitaxial passivated PNP silicon transistor. -40V, -600mA. |
General Electric Solid State |
| 2682 |
2N4403 |
General purpose transistor. Collector-emitter voltage: Vceo = -40V. Collector-base voltage: Vcbo = -40V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
| 2683 |
2N4424 |
Planar epitaxial passivated NPN silicon transistor. 40V, 500mA. |
General Electric Solid State |
| 2684 |
2N5086 |
Amplifier transistor. Collector-emitter voltage: Vceo = -50V. Collector-base voltage: Vcbo = -50V. Collector dissipation: Pc(max) = -625mW. |
USHA India LTD |
| 2685 |
2N5087 |
Amplifier transistor. Collector-emitter voltage: Vceo = -50V. Collector-base voltage: Vcbo = -50V. Collector dissipation: Pc(max) = -625mW. |
USHA India LTD |
| 2686 |
2N5088 |
Amplifier transistor. Collector-emitter voltage: Vceo = 30V. Collector-base voltage: Vcbo = 35V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
| 2687 |
2N5089 |
Amplifier transistor. Collector-emitter voltage: Vceo = 25V. Collector-base voltage: Vcbo = 30V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
| 2688 |
2N5210 |
Amplifier transistor. Collector-emitter voltage: Vceo = 50V. Collector-base voltage: Vcbo = 50V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
| 2689 |
2N5232 |
Planar epitaxial passivated NPN silicon transistor. 50V, 100mA. |
General Electric Solid State |
| 2690 |
2N5232A |
Planar epitaxial passivated NPN silicon transistor. 50V, 100mA. |
General Electric Solid State |
| 2691 |
2N5249 |
Planar epitaxial passivated NPN silicon transistor. 50V, 100mA. |
General Electric Solid State |
| 2692 |
2N5249A |
Planar epitaxial passivated NPN silicon transistor. 50V, 100mA. |
General Electric Solid State |
| 2693 |
2N5306 |
Planar epitaxial passivated NPN silicon Darlington transistor. 25V, 300mA. |
General Electric Solid State |
| 2694 |
2N5307 |
Planar epitaxial passivated NPN silicon Darlington transistor. 40V, 300mA. |
General Electric Solid State |
| 2695 |
2N5308 |
Planar epitaxial passivated NPN silicon Darlington transistor. 40V, 300mA. |
General Electric Solid State |
| 2696 |
2N5308A |
Planar epitaxial passivated NPN silicon Darlington transistor. 40V, 300mA. |
General Electric Solid State |
| 2697 |
2N5320 |
Professional transistor, general purpose switches |
SGS-ATES |
| 2698 |
2N5321 |
Professional transistor, general purpose switches |
SGS-ATES |
| 2699 |
2N5323 |
Professional transistor, general purpose switches |
SGS-ATES |
| 2700 |
2N5366 |
Planar epitaxial passivated PNP silicon transistor. 40V, 300mA. |
General Electric Solid State |
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