| No. |
Part Name |
Description |
Manufacturer |
| 2671 |
KDS201 |
SILICON EPITAXIAL PLANAR DIODE (ULTRA HIGH SPEED SWITCHING) |
Korea Electronics (KEC) |
| 2672 |
KS206T |
Diode for very high speed switching circuits |
Tesla Elektronicke |
| 2673 |
KSB772 |
PNP (AUDIO FREQUENCY POWER AMPLIFIER LOW SPEED SWITCHING) |
Samsung Electronic |
| 2674 |
KSC1008 |
NPN (LOW FREQUENCY AMPLIFIER MEDIUM SPEED SWITCHING) |
Samsung Electronic |
| 2675 |
KSC2331 |
NPN LOW FREQUENCY AMPLIFIER MEDIUM SPEED SWITCHING) |
Samsung Electronic |
| 2676 |
KSC2517 |
NPN (HIGH SPEED SWITCHING INDUSTRIAL USE) |
Samsung Electronic |
| 2677 |
KSD1616 |
NPN (AUDIO FREQUENCY POWER AMPLIFIER MIDIUM SPEED SWITCHING) |
Samsung Electronic |
| 2678 |
KSD1616A |
NPN (AUDIO FREQUENCY POWER AMPLIFIER MIDIUM SPEED SWITCHING) |
Samsung Electronic |
| 2679 |
KSD560 |
NPN (LOW FREQUENCY POWER AMPLIFIER LOW SPEED SWITCHING INDUSTRIAL USE) |
Samsung Electronic |
| 2680 |
KSD882 |
NPN (AUDIO FREQUENCY POWER AMPLIFIER LOW SPEED SWITCHING) |
Samsung Electronic |
| 2681 |
KSD986 |
NPN (LOW FREQUENCY POWER AMPLIFIER LOW SPEED SWITCHING INDUSTRIAL USE) |
Samsung Electronic |
| 2682 |
KSY21 |
NPN transistor for high speed switching circuits |
Tesla Elektronicke |
| 2683 |
KSY62 |
NPN transistor for high speed switching circuits |
Tesla Elektronicke |
| 2684 |
KSY62A |
NPN transistor for high speed switching circuits |
Tesla Elektronicke |
| 2685 |
KSY62B |
NPN transistor for high speed switching circuits |
Tesla Elektronicke |
| 2686 |
KSY63 |
NPN transistor for high speed switching circuits |
Tesla Elektronicke |
| 2687 |
KSY71 |
NPN transistor for very high speed switching circuits |
Tesla Elektronicke |
| 2688 |
KSY72 |
NPN transistor for very high speed switching circuits |
Tesla Elektronicke |
| 2689 |
KTB631 |
EPITAXIAL PLANAR PNP TRANSISTOR (LOW FREQUENCY POWER AMP/ MEDIUM SPEED SWITCHING) |
Korea Electronics (KEC) |
| 2690 |
KTD600 |
EPITAXIAL PLANAR NPN TRANSISTOR (LOW FREQUENCY POWER AMP/ MEDIUM SPEED SWITCHING) |
Korea Electronics (KEC) |
| 2691 |
KTK5132 |
N CHANNEL MOS FIELD EFFECT TRANSISTOR (ULTRA-HIGH SPEED SWITCHING/ ANALOG SWITCH) |
Korea Electronics (KEC) |
| 2692 |
KTK5162 |
N CHANNEL MOS FIELD EFFECT TRANSISTOR (ULTRA-HIGH SPEED SWITCHING/ ANALOG SWITCH) |
Korea Electronics (KEC) |
| 2693 |
KTX301 |
EPITAXIAL PLANAR PNP TRANSISTOR SILICON EPITAXIAL PLANAR TYPE DIODE (GENERAL PURPOSE/ ULTRA HIGH SPEED SWITCHING) |
Korea Electronics (KEC) |
| 2694 |
LFB01 |
Silicon Planar Leadless Type Ultrahigh-Speed Switching Diode |
SANYO |
| 2695 |
LFB01L |
Very High-Speed Switching Diode |
SANYO |
| 2696 |
LL4150 |
High-speed switching diode |
Formosa MS |
| 2697 |
MA1702 |
PNP germanium transistor for audio amplifier and medium speed switching applications |
Motorola |
| 2698 |
MA1703 |
PNP germanium transistor for audio amplifier and medium speed switching applications |
Motorola |
| 2699 |
MA1704 |
PNP germanium transistor for audio amplifier and medium speed switching applications |
Motorola |
| 2700 |
MA1705 |
PNP germanium transistor for audio amplifier and medium speed switching applications |
Motorola |
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