| No. |
Part Name |
Description |
Manufacturer |
| 2761 |
MCH6606 |
Ultrahigh-Speed Switching Applications |
SANYO |
| 2762 |
MCH6607 |
Ultrahigh-Speed Switching Applications |
SANYO |
| 2763 |
MCH6608 |
Ultrahigh-Speed Switching Applications |
SANYO |
| 2764 |
MCH6609 |
Ultrahigh-Speed Switching Applications |
SANYO |
| 2765 |
MCH6610 |
Ultrahigh-Speed Switching Applications |
SANYO |
| 2766 |
MCH6611 |
Ultrahigh-Speed Switching Applications |
SANYO |
| 2767 |
MCH6612 |
Ultrahigh-Speed Switching Applications |
SANYO |
| 2768 |
MCH6613 |
Ultrahigh-Speed Switching Applications |
SANYO |
| 2769 |
MCH6614 |
Ultrahigh-Speed Switching Applications |
SANYO |
| 2770 |
MCH6615 |
Ultrahigh-Speed Switching Applications |
SANYO |
| 2771 |
MCH6616 |
Ultrahigh-Speed Switching Applications |
SANYO |
| 2772 |
MCL4148 |
High-speed switching diode |
Formosa MS |
| 2773 |
MCL4448 |
100 V, high-speed switching diode |
Formosa MS |
| 2774 |
MD1126 |
NPN silicon annular dual high-speed switching transistor |
Motorola |
| 2775 |
MD1127 |
NPN silicon annular dual high-speed switching transistor |
Motorola |
| 2776 |
MD1128 |
NPN silicon annular dual high-speed switching transistor |
Motorola |
| 2777 |
MD1134 |
NPN silicon annular dual transistor for high-speed switching applications |
Motorola |
| 2778 |
MD3133 |
Dual PNP silicon annular transistor designed for high-speed switching circuits and DC to VHF amplifier applications |
Motorola |
| 2779 |
MD3133F |
Dual PNP silicon annular transistor designed for high-speed switching circuits and DC to VHF amplifier applications |
Motorola |
| 2780 |
MD3134 |
Dual PNP silicon annular transistor designed for high-speed switching circuits and DC to VHF amplifier applications |
Motorola |
| 2781 |
MD3134F |
Dual PNP silicon annular transistor designed for high-speed switching circuits and DC to VHF amplifier applications |
Motorola |
| 2782 |
MF3304 |
PNP silicon epitaxial transistor designed for low-level, high-speed switching applications |
Motorola |
| 2783 |
MG100Q2YS65H |
IGBT Module Silicon N Channel IGBT High Power & High Speed Switching Applications |
TOSHIBA |
| 2784 |
MG150Q2YS65H |
IGBT Module Silicon N Channel IGBT High Power & High Speed Switching Applications |
TOSHIBA |
| 2785 |
MG200Q2YS65H |
IGBT Module Silicon N Channel IGBT High Power & High Speed Switching Applications |
TOSHIBA |
| 2786 |
MG300Q2YS65H |
IGBT Module Silicon N Channel IGBT High Power & High Speed Switching Applications |
TOSHIBA |
| 2787 |
MG400Q1US65H |
IGBT Module Silicon N Channel IGBT High Power & High Speed Switching Applications |
TOSHIBA |
| 2788 |
MG600Q1US65H |
IGBT Module Silicon N Channel IGBT High Power & High Speed Switching Applications |
TOSHIBA |
| 2789 |
MJD122-1 |
NPN transistor, for general purpose amplifier and low speed switching applications, 100V, 8A |
Fairchild Semiconductor |
| 2790 |
MJD122T4 |
NPN transistor, for general purpose amplifier and low speed switching applications, 100V, 8A |
Fairchild Semiconductor |
| | | |
