DatasheetCatalog
  |   Home   |   All manufacturers   |   By Category   |  
FR DE ES IT PT RU

   
Quick jump to: 1N 2N 2SA 2SC 74 AD BA BC BD BF BU CXA HCF IRF KA KIA LA LM MC NE ST STK TDA TL UA
LM317 LM339 MAX232 NE555 LM324 8051 7805 2N3055 LM358 2N2222 74LS138 TDA7294 TL431 IRF540 1N4148

Datasheets for HANNEL ENHANCEME

Datasheets found :: 5405
Page: | 86 | 87 | 88 | 89 | 90 | 91 | 92 | 93 | 94 |
No. Part Name Description Manufacturer
2671 IRF640 MOSPOWER N-Channel Enhancement Mode Transistor 200V 18A Siliconix
2672 IRF640-D Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate ON Semiconductor
2673 IRF641 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 18A. General Electric Solid State
2674 IRF641 MOSPOWER N-Channel Enhancement Mode Transistor 150V 18A Siliconix
2675 IRF642 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 16A. General Electric Solid State
2676 IRF642 MOSPOWER N-Channel Enhancement Mode Transistor 200V 16A Siliconix
2677 IRF643 MOSPOWER N-Channel Enhancement Mode Transistor 150V 16A Siliconix
2678 IRF710 MOSPOWER N-Channel Enhancement Mode Transistor 400V 1.5A Siliconix
2679 IRF711 MOSPOWER N-Channel Enhancement Mode Transistor 350V 1.5A Siliconix
2680 IRF712 MOSPOWER N-Channel Enhancement Mode Transistor 400V 1.5A Siliconix
2681 IRF713 MOSPOWER N-Channel Enhancement Mode Transistor 350V 1.5A Siliconix
2682 IRF720 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 400V. Continuous drain current(at Tc 25deg) 3.0A. General Electric Solid State
2683 IRF720 MOSPOWER N-Channel Enhancement Mode Transistor 400V 3A Siliconix
2684 IRF721 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 350V. Continuous drain current(at Tc 25deg) 3.0A. General Electric Solid State
2685 IRF721 MOSPOWER N-Channel Enhancement Mode Transistor 350V 3A Siliconix
2686 IRF722 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 400V. Continuous drain current(at Tc 25deg) 2.5A. General Electric Solid State
2687 IRF722 MOSPOWER N-Channel Enhancement Mode Transistor 400V 2.5A Siliconix
2688 IRF723 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 350V. Continuous drain current(at Tc 25deg) 2.5A. General Electric Solid State
2689 IRF723 MOSPOWER N-Channel Enhancement Mode Transistor 350V 2.5A Siliconix
2690 IRF730 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 400V. Continuous drain current(at Tc 25deg) 5.5A. General Electric Solid State
2691 IRF730 MOSPOWER N-Channel Enhancement Mode Transistor 400V 5.5A Siliconix
2692 IRF731 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 350V. Continuous drain current(at Tc 25deg) 5.5A. General Electric Solid State
2693 IRF731 MOSPOWER N-Channel Enhancement Mode Transistor 350V 5.5A Siliconix
2694 IRF732 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 400V. Continuous drain current(at Tc 25deg) 4.5A. General Electric Solid State
2695 IRF732 MOSPOWER N-Channel Enhancement Mode Transistor 400V 4.5A Siliconix
2696 IRF733 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 350V. Continuous drain current(at Tc 25deg) 4.5A. General Electric Solid State
2697 IRF733 MOSPOWER N-Channel Enhancement Mode Transistor 350V 4.5A Siliconix
2698 IRF740 MOSPOWER N-Channel Enhancement Mode Transistor 400V 10A Siliconix
2699 IRF741 MOSPOWER N-Channel Enhancement Mode Transistor 350V 10A Siliconix
2700 IRF742 MOSPOWER N-Channel Enhancement Mode Transistor 400V 8.0A Siliconix


Datasheets found :: 5405
Page: | 86 | 87 | 88 | 89 | 90 | 91 | 92 | 93 | 94 |



© 2024 - www Datasheet Catalog com