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Datasheets for HANNEL ENHANCEME

Datasheets found :: 5405
Page: | 87 | 88 | 89 | 90 | 91 | 92 | 93 | 94 | 95 |
No. Part Name Description Manufacturer
2701 IRF743 MOSPOWER N-Channel Enhancement Mode Transistor 350V 8.0A Siliconix
2702 IRF82 N CHANNEL ENHANCEMENT MODE POWER MOSTRANSISTORS ST Microelectronics
2703 IRF820 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 500V. Continuous drain current(at Tc 25deg) 2.5A. General Electric Solid State
2704 IRF820 N-CHANNEL Enhancement-Mode Silicon Gate TMOS Motorola
2705 IRF820 MOSPOWER N-Channel Enhancement Mode Transistor 500V 2.5A Siliconix
2706 IRF820FI N-channel enhancement mode power MOS transistor, 500V, 2.2A SGS Thomson Microelectronics
2707 IRF821 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 450V. Continuous drain current(at Tc 25deg) 2.5A. General Electric Solid State
2708 IRF821 N-CHANNEL Enhancement-Mode Silicon Gate TMOS Motorola
2709 IRF821 MOSPOWER N-Channel Enhancement Mode Transistor 450V 2.5A Siliconix
2710 IRF822 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 500V. Continuous drain current(at Tc 25deg) 2.0A. General Electric Solid State
2711 IRF822 N-channel enhancement mode power MOS transistor, 500V, 2.8A SGS Thomson Microelectronics
2712 IRF822 MOSPOWER N-Channel Enhancement Mode Transistor 500V 2.0A Siliconix
2713 IRF822FI N-channel enhancement mode power MOS transistor, 500V, 1.9A SGS Thomson Microelectronics
2714 IRF822FI N CHANNEL ENHANCEMENT MODE POWER MOSTRANSISTORS ST Microelectronics
2715 IRF823 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 450V. Continuous drain current(at Tc 25deg) 2.0A. General Electric Solid State
2716 IRF823 N-CHANNEL Enhancement-Mode Silicon Gate TMOS Motorola
2717 IRF823 MOSPOWER N-Channel Enhancement Mode Transistor 450V 2.0A Siliconix
2718 IRF82FI N CHANNEL ENHANCEMENT MODE POWER MOSTRANSISTORS ST Microelectronics
2719 IRF830 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 500V. Continuous drain current(at Tc 25deg) 4.5A. General Electric Solid State
2720 IRF830 MOSPOWER N-Channel Enhancement Mode Transistor 500V 4.5A Siliconix
2721 IRF830 N-CHANNEL ENHANCEMENT MODE TRSYS
2722 IRF830-D Power Field Effect Transistor N-Channel Enhancement Mode Silicon Gate TMOS ON Semiconductor
2723 IRF831 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 450V. Continuous drain current(at Tc 25deg) 4.5A. General Electric Solid State
2724 IRF831 MOSPOWER N-Channel Enhancement Mode Transistor 450V 4.5A Siliconix
2725 IRF832 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 500V. Continuous drain current(at Tc 25deg) 4.0A. General Electric Solid State
2726 IRF832 MOSPOWER N-Channel Enhancement Mode Transistor 500V 4.0A Siliconix
2727 IRF833 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 450V. Continuous drain current(at Tc 25deg) 4.0A. General Electric Solid State
2728 IRF833 MOSPOWER N-Channel Enhancement Mode Transistor 450V 4.0A Siliconix
2729 IRF840 N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR Motorola
2730 IRF840 MOSPOWER N-Channel Enhancement Mode Transistor 500V 8A Siliconix


Datasheets found :: 5405
Page: | 87 | 88 | 89 | 90 | 91 | 92 | 93 | 94 | 95 |



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