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Datasheets for MOS D

Datasheets found :: 4815
Page: | 86 | 87 | 88 | 89 | 90 | 91 | 92 | 93 | 94 |
No. Part Name Description Manufacturer
2671 KM416C1004BT-L45 5V, 1M x 16 bit CMOS DRAM with extended data out, 45ns Samsung Electronic
2672 KM416C1004BT-L5 5V, 1M x 16 bit CMOS DRAM with extended data out, 50ns Samsung Electronic
2673 KM416C1004BT-L6 5V, 1M x 16 bit CMOS DRAM with extended data out, 60ns Samsung Electronic
2674 KM416C1004BT-L7 5V, 1M x 16 bit CMOS DRAM with extended data out, 70ns Samsung Electronic
2675 KM416C1004C 1M x 16Bit CMOS Dynamic RAM with Extended Data Out Samsung Electronic
2676 KM416C1004CJ-45 1M x 16Bit CMOS dynamic RAM with extended data out, 45ns, VCC=5.0V, refresh period=64ms Samsung Electronic
2677 KM416C1004CJ-5 1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=5.0V, refresh period=64ms Samsung Electronic
2678 KM416C1004CJ-6 1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=5.0V, refresh period=64ms Samsung Electronic
2679 KM416C1004CJ-L45 5V, 1M x 16 bit CMOS DRAM with extended data out, 45ns Samsung Electronic
2680 KM416C1004CJ-L5 5V, 1M x 16 bit CMOS DRAM with extended data out, 50ns Samsung Electronic
2681 KM416C1004CJ-L6 5V, 1M x 16 bit CMOS DRAM with extended data out, 60ns Samsung Electronic
2682 KM416C1004CJL-45 1M x 16Bit CMOS dynamic RAM with extended data out, 45ns, VCC=5.0V, self-refresh Samsung Electronic
2683 KM416C1004CJL-5 1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=5.0V, self-refresh Samsung Electronic
2684 KM416C1004CJL-6 1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=5.0V, self-refresh Samsung Electronic
2685 KM416C1004CT-45 5V, 1M x 16 bit CMOS DRAM with extended data out, 45ns Samsung Electronic
2686 KM416C1004CT-5 5V, 1M x 16 bit CMOS DRAM with extended data out, 50ns Samsung Electronic
2687 KM416C1004CT-6 5V, 1M x 16 bit CMOS DRAM with extended data out, 60ns Samsung Electronic
2688 KM416C1004CT-L45 5V, 1M x 16 bit CMOS DRAM with extended data out, 45ns Samsung Electronic
2689 KM416C1004CT-L5 5V, 1M x 16 bit CMOS DRAM with extended data out, 50ns Samsung Electronic
2690 KM416C1004CT-L6 5V, 1M x 16 bit CMOS DRAM with extended data out, 60ns Samsung Electronic
2691 KM416C1004CTL-45 1M x 16Bit CMOS dynamic RAM with extended data out, 45ns, VCC=5.0V, self-refresh Samsung Electronic
2692 KM416C1004CTL-5 1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=5.0V, self-refresh Samsung Electronic
2693 KM416C1004CTL-6 1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=5.0V, self-refresh Samsung Electronic
2694 KM416C1200B 1M x 16Bit CMOS Dynamic RAM with Fast Page Mode Samsung Electronic
2695 KM416C1200BJ-5 1M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 50ns Samsung Electronic
2696 KM416C1200BJ-6 1M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 60ns Samsung Electronic
2697 KM416C1200BJ-7 1M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 70ns Samsung Electronic
2698 KM416C1200BJL-5 1M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 50ns Samsung Electronic
2699 KM416C1200BJL-6 1M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 60ns Samsung Electronic
2700 KM416C1200BJL-7 1M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 70ns Samsung Electronic


Datasheets found :: 4815
Page: | 86 | 87 | 88 | 89 | 90 | 91 | 92 | 93 | 94 |



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