DatasheetCatalog
  |   Home   |   All manufacturers   |   By Category   |  
FR DE ES IT PT RU

   
Quick jump to: 1N 2N 2SA 2SC 74 AD BA BC BD BF BU CXA HCF IRF KA KIA LA LM MC NE ST STK TDA TL UA
LM317 LM339 MAX232 NE555 LM324 8051 7805 2N3055 LM358 2N2222 74LS138 TDA7294 TL431 IRF540 1N4148

Datasheets for MOS D

Datasheets found :: 4815
Page: | 88 | 89 | 90 | 91 | 92 | 93 | 94 | 95 | 96 |
No. Part Name Description Manufacturer
2731 KM416C1204BT-L7 5V, 1M x 16 bit CMOS DRAM with extended data out, 70ns Samsung Electronic
2732 KM416C1204C 1M x 16Bit CMOS Dynamic RAM with Extended Data Out Samsung Electronic
2733 KM416C1204CJ-45 1M x 16Bit CMOS dynamic RAM with extended data out, 45ns, VCC=5.0V, refresh period=16ms Samsung Electronic
2734 KM416C1204CJ-5 5V, 1M x 16 bit CMOS DRAM with extended data out, 50ns Samsung Electronic
2735 KM416C1204CJ-50 1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=5.0V, refresh period=16ms Samsung Electronic
2736 KM416C1204CJ-6 5V, 1M x 16 bit CMOS DRAM with extended data out, 60ns Samsung Electronic
2737 KM416C1204CJ-60 1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=5.0V, refresh period=16ms Samsung Electronic
2738 KM416C1204CJ-L45 5V, 1M x 16 bit CMOS DRAM with extended data out, 45ns Samsung Electronic
2739 KM416C1204CJ-L5 5V, 1M x 16 bit CMOS DRAM with extended data out, 50ns Samsung Electronic
2740 KM416C1204CJ-L6 5V, 1M x 16 bit CMOS DRAM with extended data out, 60ns Samsung Electronic
2741 KM416C1204CJL-45 1M x 16Bit CMOS dynamic RAM with extended data out, 45ns, VCC=5.0V, self-refresh Samsung Electronic
2742 KM416C1204CJL-50 1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=5.0V, self-refresh Samsung Electronic
2743 KM416C1204CJL-60 1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=5.0V, self-refresh Samsung Electronic
2744 KM416C1204CT-45 5V, 1M x 16 bit CMOS DRAM with extended data out, 45ns Samsung Electronic
2745 KM416C1204CT-5 5V, 1M x 16 bit CMOS DRAM with extended data out, 50ns Samsung Electronic
2746 KM416C1204CT-50 1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=5.0V, refresh period=16ms Samsung Electronic
2747 KM416C1204CT-6 5V, 1M x 16 bit CMOS DRAM with extended data out, 60ns Samsung Electronic
2748 KM416C1204CT-60 1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=5.0V, refresh period=16ms Samsung Electronic
2749 KM416C1204CT-L45 5V, 1M x 16 bit CMOS DRAM with extended data out, 45ns Samsung Electronic
2750 KM416C1204CT-L5 5V, 1M x 16 bit CMOS DRAM with extended data out, 50ns Samsung Electronic
2751 KM416C1204CT-L6 5V, 1M x 16 bit CMOS DRAM with extended data out, 60ns Samsung Electronic
2752 KM416C1204CTL-45 1M x 16Bit CMOS dynamic RAM with extended data out, 45ns, VCC=5.0V, self-refresh Samsung Electronic
2753 KM416C1204CTL-50 1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=5.0V, self-refresh Samsung Electronic
2754 KM416C1204CTL-60 1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=5.0V, self-refresh Samsung Electronic
2755 KM416C254D 256K x 16Bit CMOS Dynamic RAM with Extended Data Out Samsung Electronic
2756 KM416C254DJ-5 256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=5.0V, 50ns, 8ms refresh period Samsung Electronic
2757 KM416C254DJ-6 256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=5.0V, 60ns, 8ms refresh period Samsung Electronic
2758 KM416C254DJ-7 256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=5.0V, 70ns, 8ms refresh period Samsung Electronic
2759 KM416C254DJL-5 256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=5.0V, 50ns, self-refresh Samsung Electronic
2760 KM416C254DJL-6 256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=5.0V, 60ns, self-refresh Samsung Electronic


Datasheets found :: 4815
Page: | 88 | 89 | 90 | 91 | 92 | 93 | 94 | 95 | 96 |



© 2024 - www Datasheet Catalog com