No. |
Part Name |
Description |
Manufacturer |
2671 |
P2182A-08ST |
3.3 V, 3 MHz to 78 MHz, general purpose EMI reduction IC |
Alliance Semiconductor |
2672 |
P2182A-08TR |
3.3 V, 3 MHz to 78 MHz, general purpose EMI reduction IC |
Alliance Semiconductor |
2673 |
P2182A-08TT |
3.3 V, 3 MHz to 78 MHz, general purpose EMI reduction IC |
Alliance Semiconductor |
2674 |
P2182B-08TR |
3.3 V, 3 MHz to 78 MHz, general purpose EMI reduction IC |
Alliance Semiconductor |
2675 |
P2182B-08TT |
3.3 V, 3 MHz to 78 MHz, general purpose EMI reduction IC |
Alliance Semiconductor |
2676 |
P2184A-08SR |
3.3 V, 3 MHz to 78 MHz, general purpose EMI reduction IC |
Alliance Semiconductor |
2677 |
P2184A-08ST |
3.3 V, 3 MHz to 78 MHz, general purpose EMI reduction IC |
Alliance Semiconductor |
2678 |
P2184A-08TR |
3.3 V, 3 MHz to 78 MHz, general purpose EMI reduction IC |
Alliance Semiconductor |
2679 |
P2184A-08TT |
3.3 V, 3 MHz to 78 MHz, general purpose EMI reduction IC |
Alliance Semiconductor |
2680 |
P2184B-08TR |
3.3 V, 3 MHz to 78 MHz, general purpose EMI reduction IC |
Alliance Semiconductor |
2681 |
P2184B-08TT |
3.3 V, 3 MHz to 78 MHz, general purpose EMI reduction IC |
Alliance Semiconductor |
2682 |
P2532-01 |
PbS photoconductive detector |
Hamamatsu Corporation |
2683 |
P2680-02 |
PbSe photoconductive detector |
Hamamatsu Corporation |
2684 |
P2680-03 |
PbSe photoconductive detector |
Hamamatsu Corporation |
2685 |
P2682-01 |
PbS photoconductive detector |
Hamamatsu Corporation |
2686 |
P2748 |
MCT photoconductive detector |
Hamamatsu Corporation |
2687 |
P2748-40 |
MCT photoconductive detector |
Hamamatsu Corporation |
2688 |
P2748-41 |
MCT photoconductive detector |
Hamamatsu Corporation |
2689 |
P2748-42 |
MCT photoconductive detector |
Hamamatsu Corporation |
2690 |
P2750 |
0.2mW; allowable current:6mA; MCT photoconductive detector: non-cooled type and TE-cooled suitable for long, continuous operation |
Hamamatsu Corporation |
2691 |
P2750-06 |
0.2mW; allowable current:3mA; MCT photoconductive detector: non-cooled type and TE-cooled suitable for long, continuous operation |
Hamamatsu Corporation |
2692 |
P2750-08 |
0.2mW; allowable current:6mA; MCT photoconductive detector: non-cooled type and TE-cooled suitable for long, continuous operation |
Hamamatsu Corporation |
2693 |
P2781 |
General Purpose EMI Reduction IC |
ON Semiconductor |
2694 |
P2811 |
Low Power EMI Reduction IC |
ON Semiconductor |
2695 |
P2811A-08SR |
3.3 V, 10 MHz to 40 MHz, low-power EMI reduction IC |
Alliance Semiconductor |
2696 |
P2811A-08ST |
3.3 V, 10 MHz to 40 MHz, low-power EMI reduction IC |
Alliance Semiconductor |
2697 |
P2811A-08TR |
3.3 V, 10 MHz to 40 MHz, low-power EMI reduction IC |
Alliance Semiconductor |
2698 |
P2811A-08TT |
3.3 V, 10 MHz to 40 MHz, low-power EMI reduction IC |
Alliance Semiconductor |
2699 |
P2812A-08SR |
3.3 V, 10 MHz to 40 MHz, low-power EMI reduction IC |
Alliance Semiconductor |
2700 |
P2812A-08ST |
3.3 V, 10 MHz to 40 MHz, low-power EMI reduction IC |
Alliance Semiconductor |
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