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Datasheets for UCTI

Datasheets found :: 9745
Page: | 87 | 88 | 89 | 90 | 91 | 92 | 93 | 94 | 95 |
No. Part Name Description Manufacturer
2701 P2812A-08TR 3.3 V, 10 MHz to 40 MHz, low-power EMI reduction IC Alliance Semiconductor
2702 P2812A-08TT 3.3 V, 10 MHz to 40 MHz, low-power EMI reduction IC Alliance Semiconductor
2703 P2814A-08SR 3.3 V, 10 MHz to 40 MHz, low-power EMI reduction IC Alliance Semiconductor
2704 P2814A-08ST 3.3 V, 10 MHz to 40 MHz, low-power EMI reduction IC Alliance Semiconductor
2705 P2814A-08TR 3.3 V, 10 MHz to 40 MHz, low-power EMI reduction IC Alliance Semiconductor
2706 P2814A-08TT 3.3 V, 10 MHz to 40 MHz, low-power EMI reduction IC Alliance Semiconductor
2707 P3207-05 PbSe photoconductive detector Hamamatsu Corporation
2708 P3257 MCT photoconductive detector Hamamatsu Corporation
2709 P3257-01 MCT photoconductive detector Hamamatsu Corporation
2710 P3257-10 MCT photoconductive detector Hamamatsu Corporation
2711 P3257-25 MCT photoconductive detector Hamamatsu Corporation
2712 P3257-30 0.2mW; allowable current:50mA; MCT photoconductive detector: non-cooled type and TE-cooled suitable for long, continuous operation Hamamatsu Corporation
2713 P3257-31 0.2mW; allowable current:50mA; MCT photoconductive detector: non-cooled type and TE-cooled suitable for long, continuous operation Hamamatsu Corporation
2714 P3257-50 Allowable current:40mA; MCT photoconductive detector: dewar type detector with high sensitivity and high-speed response in long wavelength range Hamamatsu Corporation
2715 P368 CdS photoconductive cell Hamamatsu Corporation
2716 P380 CdS photoconductive cell Hamamatsu Corporation
2717 P380-7R CbS photoconductive cell Hamamatsu Corporation
2718 P3872 CdS photoconductive cell Hamamatsu Corporation
2719 P3981 0.2mW; allowable current:3mA; MCT photoconductive detector: non-cooled type and TE-cooled suitable for long, continuous operation Hamamatsu Corporation
2720 P3981-01 0.2mW; allowable current:3mA; MCT photoconductive detector: non-cooled type and TE-cooled suitable for long, continuous operation Hamamatsu Corporation
2721 P3I2005A General Purpose Peak EMI Reduction IC ON Semiconductor
2722 P3MS650100H 1.8V/2.5V/3.3V, LVCMOS Peak EMI Reduction Clock Generator ON Semiconductor
2723 P3MS650103H 1.8V/2.5V/3.3V, LVCMOS Peak EMI Reduction Clock Generator ON Semiconductor
2724 P3MXP1039PC-V Photoconductive Detectors Microsemi
2725 P3P2043B LCD Panel EMI Reduction IC ON Semiconductor
2726 P3P623S00 TIMING-SAFE ™ Peak EMI Reduction IC ON Semiconductor
2727 P3P76Z11D Low Voltage, Timing-Safe™ Peak EMI reduction IC ON Semiconductor
2728 P3P8163A Spread Spectrum Peak EMI Reduction Device, LVCMOS, 3.3 V ON Semiconductor
2729 P3P816711A Spread Spectrum Peak EMI Reduction Device ON Semiconductor
2730 P3P8203A General Purpose Peak EMI Reduction IC ON Semiconductor


Datasheets found :: 9745
Page: | 87 | 88 | 89 | 90 | 91 | 92 | 93 | 94 | 95 |



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