No. |
Part Name |
Description |
Manufacturer |
2701 |
P2812A-08TR |
3.3 V, 10 MHz to 40 MHz, low-power EMI reduction IC |
Alliance Semiconductor |
2702 |
P2812A-08TT |
3.3 V, 10 MHz to 40 MHz, low-power EMI reduction IC |
Alliance Semiconductor |
2703 |
P2814A-08SR |
3.3 V, 10 MHz to 40 MHz, low-power EMI reduction IC |
Alliance Semiconductor |
2704 |
P2814A-08ST |
3.3 V, 10 MHz to 40 MHz, low-power EMI reduction IC |
Alliance Semiconductor |
2705 |
P2814A-08TR |
3.3 V, 10 MHz to 40 MHz, low-power EMI reduction IC |
Alliance Semiconductor |
2706 |
P2814A-08TT |
3.3 V, 10 MHz to 40 MHz, low-power EMI reduction IC |
Alliance Semiconductor |
2707 |
P3207-05 |
PbSe photoconductive detector |
Hamamatsu Corporation |
2708 |
P3257 |
MCT photoconductive detector |
Hamamatsu Corporation |
2709 |
P3257-01 |
MCT photoconductive detector |
Hamamatsu Corporation |
2710 |
P3257-10 |
MCT photoconductive detector |
Hamamatsu Corporation |
2711 |
P3257-25 |
MCT photoconductive detector |
Hamamatsu Corporation |
2712 |
P3257-30 |
0.2mW; allowable current:50mA; MCT photoconductive detector: non-cooled type and TE-cooled suitable for long, continuous operation |
Hamamatsu Corporation |
2713 |
P3257-31 |
0.2mW; allowable current:50mA; MCT photoconductive detector: non-cooled type and TE-cooled suitable for long, continuous operation |
Hamamatsu Corporation |
2714 |
P3257-50 |
Allowable current:40mA; MCT photoconductive detector: dewar type detector with high sensitivity and high-speed response in long wavelength range |
Hamamatsu Corporation |
2715 |
P368 |
CdS photoconductive cell |
Hamamatsu Corporation |
2716 |
P380 |
CdS photoconductive cell |
Hamamatsu Corporation |
2717 |
P380-7R |
CbS photoconductive cell |
Hamamatsu Corporation |
2718 |
P3872 |
CdS photoconductive cell |
Hamamatsu Corporation |
2719 |
P3981 |
0.2mW; allowable current:3mA; MCT photoconductive detector: non-cooled type and TE-cooled suitable for long, continuous operation |
Hamamatsu Corporation |
2720 |
P3981-01 |
0.2mW; allowable current:3mA; MCT photoconductive detector: non-cooled type and TE-cooled suitable for long, continuous operation |
Hamamatsu Corporation |
2721 |
P3I2005A |
General Purpose Peak EMI Reduction IC |
ON Semiconductor |
2722 |
P3MS650100H |
1.8V/2.5V/3.3V, LVCMOS Peak EMI Reduction Clock Generator |
ON Semiconductor |
2723 |
P3MS650103H |
1.8V/2.5V/3.3V, LVCMOS Peak EMI Reduction Clock Generator |
ON Semiconductor |
2724 |
P3MXP1039PC-V |
Photoconductive Detectors |
Microsemi |
2725 |
P3P2043B |
LCD Panel EMI Reduction IC |
ON Semiconductor |
2726 |
P3P623S00 |
TIMING-SAFE ™ Peak EMI Reduction IC |
ON Semiconductor |
2727 |
P3P76Z11D |
Low Voltage, Timing-Safe™ Peak EMI reduction IC |
ON Semiconductor |
2728 |
P3P8163A |
Spread Spectrum Peak EMI Reduction Device, LVCMOS, 3.3 V |
ON Semiconductor |
2729 |
P3P816711A |
Spread Spectrum Peak EMI Reduction Device |
ON Semiconductor |
2730 |
P3P8203A |
General Purpose Peak EMI Reduction IC |
ON Semiconductor |
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