| No. |
Part Name |
Description |
Manufacturer |
| 271 |
MRF18060B |
MRF18060B, MRF18060BR3, MRF18060BLSR3, MRF18060BSR3 1.90-1.99 GHz, 60 W, 26 V Lateral N-Channel RF Power MOSFETs |
Motorola |
| 272 |
MRF18085B |
MRF18085B, MRF18085BR3, MRF18085BLSR3 GSM/GSM EDGE 1.9-1.99 GHz, 85 W, 26 V Lateral N-Channel RF Power MOSFETs |
Motorola |
| 273 |
MRF18090B |
MRF18090B, MRF18090BS 1.90-1.99 GHz, 90 W, 26 V Lateral N-Channel RF Power MOSFETs |
Motorola |
| 274 |
NE5510179A-T1 |
3.5 V operation silicon RF power MOSFET for 1.9 GHz transmission amplifiers. |
NEC |
| 275 |
NE56632-19D |
Active-LOW system reset with adjustable delay time, 1.9V |
Philips |
| 276 |
NTE5098A |
Zener diode, 1 watt, +-5% tolerance. Nominal zener voltage Vz = 130V. Zener test current Izt = 1.9mA. |
NTE Electronics |
| 277 |
PB-CMM1321 |
1.85 to 1.91 GHz, 5 V, 28.5 dBm PCS power amplifier |
CELERITEK |
| 278 |
PB-CMM1333-AK |
1.85 to 1.91 GHz, 5 V, 31 dBm PCS/PCN power amplifier |
CELERITEK |
| 279 |
PH1819-10 |
Wireless Bipolar Power Transistor, 1 OW 1.78 - 1.90 GHz |
Tyco Electronics |
| 280 |
PH1819-15N |
Wireless Bipolar Power Transistor, 15W . 1.78 - 1.90 GHz |
Tyco Electronics |
| 281 |
PH1819-2 |
Wireless Bipolar Power Transistor, 2W 1.78 - 1.90 GHz |
Tyco Electronics |
| 282 |
PH1819-4N |
Wireless Bipolar Power Transistor, 4W 1.78 - 1.90 GHz |
Tyco Electronics |
| 283 |
PSMN1R6-30BL |
N-channel 30 V 1.9 mΩ logic level MOSFET in D2PAK |
Nexperia |
| 284 |
PSMN1R6-30BL |
N-channel 30 V 1.9 mΩ logic level MOSFET in D2PAK |
NXP Semiconductors |
| 285 |
PSMN1R6-30MLH |
N-channel 30 V, 1.9 mΩ, 160 A logic level MOSFET in LFPAK33 using NextPowerS3 technology |
Nexperia |
| 286 |
PSMN1R7-25YLC |
N-channel 25 V 1.9 mΩ logic level MOSFET in LFPAK using NextPower technology |
NXP Semiconductors |
| 287 |
PSMN1R9-40YSD |
N-channel 40 V, 1.9 mΩ, 120 A standard level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus technology |
Nexperia |
| 288 |
PTB20175 |
55 Watts, 1.9�2.0 GHz Cellular Radio RF Power Transistor |
Ericsson Microelectronics |
| 289 |
PTF10043 |
12 Watts, 1.9�2.0 GHz GOLDMOS Field Effect Transistor |
Ericsson Microelectronics |
| 290 |
PTF10065 |
30 Watts, 1.93�1.99 GHz GOLDMOS Field Effect Transistor |
Ericsson Microelectronics |
| 291 |
PTF10154 |
85 Watts, 1.93�1.99 GHz GOLDMOS Field Effect Transistor |
Ericsson Microelectronics |
| 292 |
PTH31002 |
30 Watts, 1.9�2.0 GHz 50-Ohm Power Hybrid |
Ericsson Microelectronics |
| 293 |
PTH32003 |
25 Watts, 1.9�2.0 GHz 50-Ohm High-Gain Power Hybrid |
Ericsson Microelectronics |
| 294 |
R1112N19A-TL |
Low noise 150mA LDO regulator. Output voltage 1.9V. Active low type. Taping type TL |
Ricoh |
| 295 |
R1112N19A-TR |
Low noise 150mA LDO regulator. Output voltage 1.9V. Active low type. Standard taping type TR |
Ricoh |
| 296 |
R1112N19B-TL |
Low noise 150mA LDO regulator. Output voltage 1.9V. Active high type. Taping type TL |
Ricoh |
| 297 |
R1112N19B-TR |
Low noise 150mA LDO regulator. Output voltage 1.9V. Active high type. Standard taping type TR |
Ricoh |
| 298 |
R1121N191A-TL |
Low noise 150mA LDO regulator. Output voltage 1.9V. Active L type. Taping specification TL. |
Ricoh |
| 299 |
R1121N191A-TR |
Low noise 150mA LDO regulator. Output voltage 1.9V. Active L type. Standard taping specification TR. |
Ricoh |
| 300 |
R1121N191B-TL |
Low noise 150mA LDO regulator. Output voltage 1.9V. Active H type. Taping specification TL. |
Ricoh |
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