| No. |
Part Name |
Description |
Manufacturer |
| 361 |
RFL1N15L |
1A/ 120V and 150V/ 1.900 Ohm/ Logic Level/ N-Channel Power MOSFETs |
Intersil |
| 362 |
RFL1N15L |
1A 120V AND 150V 1.900 OHM LOGIC LEVEL N-CHANNEL POWER MOSFETS |
New Jersey Semiconductor |
| 363 |
RFL1N20 |
1A 120V AND 150V 1.900 OHM LOGIC LEVEL N-CHANNEL POWER MOSFETS |
New Jersey Semiconductor |
| 364 |
RFL1N20L |
1A 120V AND 150V 1.900 OHM LOGIC LEVEL N-CHANNEL POWER MOSFETS |
New Jersey Semiconductor |
| 365 |
SKY65375-11 |
1.92 to 1.98 GHz High Linearity, Active Bias Low-Noise Variable Gain Amplifier |
Skyworks Solutions |
| 366 |
SMBJ5956A |
1.5W silicon surface mount zener diode. Zener voltage 200 V. Test current 1.9 mA. +-10% tolerance. |
Jinan Gude Electronic Device |
| 367 |
SMBJ5956B |
1.5W silicon surface mount zener diode. Zener voltage 200 V. Test current 1.9 mA. +-5% tolerance. |
Jinan Gude Electronic Device |
| 368 |
SMBJ5956C |
1.5W silicon surface mount zener diode. Zener voltage 200 V. Test current 1.9 mA. +-2% tolerance. |
Jinan Gude Electronic Device |
| 369 |
SMBJ5956D |
1.5W silicon surface mount zener diode. Zener voltage 200 V. Test current 1.9 mA. +-1% tolerance. |
Jinan Gude Electronic Device |
| 370 |
STD2NB80 |
N - CHANNEL 800V - 4.6 Ohm - 1.9A - IPAK/DPAK PowerMESH MOSFET |
SGS Thomson Microelectronics |
| 371 |
STD2NB80 |
N-CHANNEL 800V - 4.6 OHM - 1.9A - IPAK/DPAK POWERMESH MOSFET |
ST Microelectronics |
| 372 |
STD2NB80-1 |
N-CHANNEL 800V - 4.6 OHM - 1.9A - IPAK/DPAK POWERMESH MOSFET |
ST Microelectronics |
| 373 |
STD2NB80T4 |
N-CHANNEL 800V - 4.6 OHM - 1.9A - IPAK/DPAK POWERMESH MOSFET |
ST Microelectronics |
| 374 |
STFW6N120K3 |
N-channel 1200 V, 1.95 Ohm, 6 A Zener-protected SuperMESH3(TM) Power MOSFET in TO-3PF package |
ST Microelectronics |
| 375 |
STH310N10F7-2 |
N-channel 100 V, 1.9 mOhm typ., 180 A STripFET(TM) VII DeepGATE(TM) Power MOSFET in H2PAK-2 package |
ST Microelectronics |
| 376 |
STH310N10F7-6 |
N-channel 100 V, 1.9 mOhm typ., 180 A STripFET(TM) VII DeepGATE(TM) Power MOSFET in H2PAK-6 package |
ST Microelectronics |
| 377 |
STP2NC60 |
N-CHANNEL 600V 7 OHM 1.9A TO-220/TO-220FP POWERMESH II MOSFET |
SGS Thomson Microelectronics |
| 378 |
STP2NC60 |
N-CHANNEL 600V 7 OHM 1.9A TO-220/TO-220FP POWERMESH II MOSFET |
ST Microelectronics |
| 379 |
STP2NC60FP |
N-CHANNEL 600V 7 OHM 1.9A TO-220/TO-220FP POWERMESH II MOSFET |
SGS Thomson Microelectronics |
| 380 |
STP2NC60FP |
N-CHANNEL 600V 7 OHM 1.9A TO-220/TO-220FP POWERMESH II MOSFET |
ST Microelectronics |
| 381 |
STP5NK80 |
N-CHANNEL 800V - 1.9ohm - 4.3A TO-220/TO-220FP Zener-Protected SuperMESH��Power MOSFET |
ST Microelectronics |
| 382 |
STP5NK80Z |
N-CHANNEL 800V 1.9 OHM 4.3A TO-220/TO-220FP ZENER-PROTECTED SUPERMESH POWER MOSFET |
ST Microelectronics |
| 383 |
STP5NK80ZFP |
N-CHANNEL 800V 1.9 OHM 4.3A TO-220/TO-220FP ZENER-PROTECTED SUPERMESH POWER MOSFET |
ST Microelectronics |
| 384 |
STP6N120K3 |
N-channel 1200 V, 1.95 Ohm, 6 A Zener-protected SuperMESH3(TM) Power MOSFET in TO-220 package |
ST Microelectronics |
| 385 |
STW6N120K3 |
N-channel 1200 V, 1.95 Ohm, 6 A Zener-protected SuperMESH3(TM) Power MOSFET in TO-247 package |
ST Microelectronics |
| 386 |
TC51-N1902ECBTR |
1uA voltage detector with output delay, 1.9V |
Microchip |
| 387 |
TC54VC1901ECBTR |
Voltage detector, CMOS output, 1.9V, +/-1% |
Microchip |
| 388 |
TC54VC1901ECTTR |
Voltage detector, CMOS output, 1.9V, +/-1% |
Microchip |
| 389 |
TC54VC1901EMBTR |
Voltage detector, CMOS output, 1.9V, +/-1% |
Microchip |
| 390 |
TC54VN1901ECBTR |
Voltage detector, Nch output, 1.9V, +/-1% |
Microchip |
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