| No. |
Part Name |
Description |
Manufacturer |
| 271 |
J310 |
Wideband, High Gain, Single, N- Channel JFET |
Linear Systems |
| 272 |
JANTX2N7336 |
100V Dual 2N- and 2P- Channel MOSFET in a MO-036AB package |
International Rectifier |
| 273 |
JANTXV2N7336 |
100V Dual 2N- and 2P- Channel MOSFET in a MO-036AB package |
International Rectifier |
| 274 |
JV2N7227 |
POWER MOS IV JEDEC REGISTERED N - CHANNEL HIGH VOLTAGE POWER MOSFETS 400 Volt 0.315 Ohm |
Advanced Power Technology |
| 275 |
JV2N7228 |
POWER MOS IV JEDEC REGISTERED N - CHANNEL HIGH VOLTAGE POWER MOSFETS 500 Volt 0.415 Ohm |
Advanced Power Technology |
| 276 |
JX2N7227 |
POWER MOS IV JEDEC REGISTERED N - CHANNEL HIGH VOLTAGE POWER MOSFETS 400 Volt 0.315 Ohm |
Advanced Power Technology |
| 277 |
JX2N7228 |
POWER MOS IV JEDEC REGISTERED N - CHANNEL HIGH VOLTAGE POWER MOSFETS 500 Volt 0.415 Ohm |
Advanced Power Technology |
| 278 |
LX5111 |
ULTRA 9 - CHANNEL SCSI TERMINATOR |
Microsemi |
| 279 |
LX5111A |
ULT RA 9 - CHANNEL SCSI TERMINATOR |
Microsemi |
| 280 |
LX5112 |
ULTRA 9 - CHANNEL SCSI TERMINATOR |
Microsemi |
| 281 |
LX5112A |
ULT RA 9 - CHANNEL SCSI TERMINATOR |
Microsemi |
| 282 |
LX5115 |
ULTRA 9 - CHANNEL SCSI TERMINATOR |
Microsemi |
| 283 |
LX5115A |
ULTRA 9 - CHANNEL SCSI TERMINATOR |
Microsemi |
| 284 |
LX5219 |
ULTRA 9 - CHANNEL SCSI TERMINATOR |
Microsemi |
| 285 |
MMBF170_NL |
N - Channel Enhancement Mode Field Effect Transistor |
Fairchild Semiconductor |
| 286 |
MTP3055 |
N - CHANNEL 60V - 0.1ohm - 12A TO-220 STripFET MOSFET |
ST Microelectronics |
| 287 |
MTP3055E |
N - CHANNEL 60V - 0.1Ohm - 12A TO-220 STripFET MOSFET |
SGS Thomson Microelectronics |
| 288 |
MTP3N60 |
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR |
SGS Thomson Microelectronics |
| 289 |
MTP3N60FI |
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR |
SGS Thomson Microelectronics |
| 290 |
MTP6N60 |
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR |
SGS Thomson Microelectronics |
| 291 |
NTJD4001N |
Small Signal MOSFET 30 V, 250 mA, Dual N - Channel, SC - 88 |
ON Semiconductor |
| 292 |
NTJD4001NT1 |
Small Signal MOSFET 30 V, 250 mA, Dual N - Channel, SC - 88 |
ON Semiconductor |
| 293 |
NTJD4001NT1G |
Small Signal MOSFET 30 V, 250 mA, Dual N - Channel, SC - 88 |
ON Semiconductor |
| 294 |
P16NE |
N - CHANNEL 60V - 0.08 ohm - 16A - TO-220/TO-220FP STripFET POWER MOSFET |
ST Microelectronics |
| 295 |
P16NE |
N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE] POWER MOSFET |
ST Microelectronics |
| 296 |
PB-IRF5851 |
Leaded 20V Dual N- and P- Channel HEXFET Power MOSFET in a Micro 6 package |
International Rectifier |
| 297 |
PB-IRF7105 |
Leaded 25V Dual N- and P- Channel HEXFET Power MOSFET in a SO-8 package |
International Rectifier |
| 298 |
PB-IRF7317 |
Leaded 20V Dual N- and P- Channel HEXFET Power MOSFET in a SO-8 package |
International Rectifier |
| 299 |
PB-IRF7319 |
Leaded 30V Dual N- and P- Channel HEXFET Power MOSFET in a SO-8 package |
International Rectifier |
| 300 |
PB-IRF7338 |
Leaded 12V Dual N- and P- Channel HEXFET Power MOSFET in a SO-8 package |
International Rectifier |
| | | |
