| No. |
Part Name |
Description |
Manufacturer |
| 301 |
PB-IRF7343 |
Leaded 55V Dual N- and P- Channel HEXFET Power MOSFET in a SO-8 package |
International Rectifier |
| 302 |
PB-IRF7350 |
Leaded 100V Dual N- and P- Channel HEXFET Power MOSFET in a SO-8 package |
International Rectifier |
| 303 |
PB-IRF7379 |
Leaded 30V Dual N- and P- Channel HEXFET Power MOSFET in a SO-8 package |
International Rectifier |
| 304 |
PB-IRF7389 |
Leaded 30V Dual N- and P- Channel HEXFET Power MOSFET in a SO-8 package |
International Rectifier |
| 305 |
PB-IRF7507 |
Leaded 20V Dual N- and P- Channel HEXFET Power MOSFET in a Micro 8 package |
International Rectifier |
| 306 |
PB-IRF7509 |
Leaded 30V Dual N- and P- Channel HEXFET Power MOSFET in a Micro 8 package |
International Rectifier |
| 307 |
PB-IRF9952 |
Leaded 30V Dual N- and P- Channel HEXFET Power MOSFET in a SO-8 package |
International Rectifier |
| 308 |
SDM8401 |
30V; 6A; 2.0W; dual enchanced mode field effect transistor (N and P - channel) |
SamHop Microelectronics Corp. |
| 309 |
SDM9435A |
30V; 5.3A; 2.5W; dual enchanced mode field effect transistor (N and P - channel) |
SamHop Microelectronics Corp. |
| 310 |
SST308 |
Wideband, High Gain, Single, N- Channel JFET(SMT) |
Linear Systems |
| 311 |
SST309 |
Wideband, High Gain, Single, N- Channel JFET(SMT) |
Linear Systems |
| 312 |
SST310 |
Wideband, High Gain, Single, N- Channel JFET(SMT) |
Linear Systems |
| 313 |
SST440 |
Wideband, High Gain, Monolithic Dual, N- Channel JFET(SMT) |
Linear Systems |
| 314 |
SST441 |
Wideband, High Gain, Monolithic Dual, N- Channel JFET(SMT) |
Linear Systems |
| 315 |
SST4416 |
Wideband, High Gain, Single, N- Channel JFET(SMT) |
Linear Systems |
| 316 |
SST4416A |
Wideband, High Gain, Single, N- Channel JFET(SMT) |
Linear Systems |
| 317 |
SST5911 |
Wideband, High Gain, Monolithic Dual, N- Channel JFET(SMT) |
Linear Systems |
| 318 |
SST5912 |
Wideband, High Gain, Monolithic Dual, N- Channel JFET(SMT) |
Linear Systems |
| 319 |
STB10NA40 |
N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR |
SGS Thomson Microelectronics |
| 320 |
STB10NB20 |
N - CHANNEL 200V - 0.30Ohm - 10A - D 2 PAK PowerMESH MOSFET |
SGS Thomson Microelectronics |
| 321 |
STB10NB50 |
N - CHANNEL 500V - 0.55Ohms - 10.6A - D 2 PAK PowerMESH MOSFET |
SGS Thomson Microelectronics |
| 322 |
STB10NC50-1 |
N - CHANNEL 500V - 0.48Ohms - 10A - I 2 PAK/D 2 PAK PowerMESH MOSFET |
SGS Thomson Microelectronics |
| 323 |
STB11NB40 |
N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET |
SGS Thomson Microelectronics |
| 324 |
STB15N25 |
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR |
SGS Thomson Microelectronics |
| 325 |
STB16NB25 |
N - CHANNEL 250V - 0.220Ohm - 16A - TO-263 PowerMESH MOSFET |
SGS Thomson Microelectronics |
| 326 |
STB18N20 |
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR |
SGS Thomson Microelectronics |
| 327 |
STB19NB20 |
N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET |
SGS Thomson Microelectronics |
| 328 |
STB20NE06 |
N - CHANNEL 60V - 0.06 Ohm - 20A D 2 PAK STripFET POWER MOSFET |
SGS Thomson Microelectronics |
| 329 |
STB20NE06L |
N - CHANNEL 60V - 0.06 Ohm - 20A TO-263 STripFET POWER MOSFET |
SGS Thomson Microelectronics |
| 330 |
STB22NE03L |
N - CHANNEL 30V - 0.034 Ohms - 22A TO-263 STripFET POWER MOSFET |
SGS Thomson Microelectronics |
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