| No. |
Part Name |
Description |
Manufacturer |
| 271 |
HEF4720BN |
256-bit, 1-bit per word random access memories |
Philips |
| 272 |
HEF4720BP |
256-bit, 1-bit per word random access memories |
Philips |
| 273 |
HEF4720BT |
256-bit, 1-bit per word random access memories |
Philips |
| 274 |
HEF4720V |
256-bit, 1-bit per word random access memories |
Philips |
| 275 |
HEF4720VD |
256-bit, 1-bit per word random access memories |
Philips |
| 276 |
HEF4720VF |
256-bit, 1-bit per word random access memories |
Philips |
| 277 |
HEF4720VN |
256-bit, 1-bit per word random access memories |
Philips |
| 278 |
HEF4720VP |
256-bit, 1-bit per word random access memories |
Philips |
| 279 |
HEF4720VT |
256-bit, 1-bit per word random access memories |
Philips |
| 280 |
HLMP-47009.MP10 |
Pcb Mount Led Indicator. T-1 3/4 (5 mm) Vertical Standoff |
QT Optoelectronics |
| 281 |
HLMP-47199.MP10 |
Pcb Mount Led Indicator. T-1 3/4 (5 mm) Vertical Standoff |
QT Optoelectronics |
| 282 |
HLMP-47409.MP10 |
Pcb Mount Led Indicator. T-1 3/4 (5 mm) Vertical Standoff |
QT Optoelectronics |
| 283 |
HLMP-D105A |
DOUBLE HETEROJUNCTION AIGaAs HIGH INTENSITY RED LED LAMPS Red Clear with Standoff |
Fairchild Semiconductor |
| 284 |
HLMP-D155A |
DOUBLE HETEROJUNCTION AIGaAs LOW CURRENT RED LED LAMPS Red Clear with Standoff |
Fairchild Semiconductor |
| 285 |
HM10500-15 |
+0.5 to -7.0V; 15ns; 262.144-word x 1-bit fully decoded random access memory. For high speed systems such as main memories for super computers |
Hitachi Semiconductor |
| 286 |
HM514260AJ-10 |
100ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
| 287 |
HM514260AJ-7 |
70ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
| 288 |
HM514260AJ-8 |
80ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
| 289 |
HM514260ALJ-10 |
100ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
| 290 |
HM514260ALJ-7 |
70ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
| 291 |
HM514260ALJ-8 |
80ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
| 292 |
HM514260ALRR-10 |
100ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
| 293 |
HM514260ALRR-7 |
70ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
| 294 |
HM514260ALRR-8 |
80ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
| 295 |
HM514260ALTT-10 |
100ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
| 296 |
HM514260ALTT-7 |
70ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
| 297 |
HM514260ALTT-8 |
80ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
| 298 |
HM514260ALZ-10 |
100ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
| 299 |
HM514260ALZ-7 |
70ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
| 300 |
HM514260ALZ-8 |
80ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
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