| No. |
Part Name |
Description |
Manufacturer |
| 331 |
HM514260LJP-10 |
100ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
| 332 |
HM514260LJP-7 |
70ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
| 333 |
HM514260LJP-8 |
80ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
| 334 |
HM514260LTT-10 |
100ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
| 335 |
HM514260LTT-7 |
70ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
| 336 |
HM514260LTT-8 |
80ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
| 337 |
HM514260LZP-10 |
100ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
| 338 |
HM514260LZP-7 |
70ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
| 339 |
HM514260LZP-8 |
80ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
| 340 |
HM514260TT-10 |
100ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
| 341 |
HM514260TT-7 |
70ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
| 342 |
HM514260TT-8 |
80ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
| 343 |
HM514260ZP-10 |
100ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
| 344 |
HM514260ZP-7 |
70ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
| 345 |
HM514260ZP-8 |
80ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
| 346 |
HM514400B |
1/048/576-word X 4-bit Dynamic Random Access Memory |
Hitachi Semiconductor |
| 347 |
HM514400BL |
1/048/576-word X 4-bit Dynamic Random Access Memory |
Hitachi Semiconductor |
| 348 |
HM514400BLS-6 |
1,048,576-word x 4-bit dynamic random access memory, 60ns |
Hitachi Semiconductor |
| 349 |
HM514400BLS-7 |
1,048,576-word x 4-bit dynamic random access memory, 70ns |
Hitachi Semiconductor |
| 350 |
HM514400BLS-8 |
1,048,576-word x 4-bit dynamic random access memory, 80ns |
Hitachi Semiconductor |
| 351 |
HM514400BLTT-6 |
1,048,576-word x 4-bit dynamic random access memory, 60ns |
Hitachi Semiconductor |
| 352 |
HM514400BLTT-7 |
1,048,576-word x 4-bit dynamic random access memory, 70ns |
Hitachi Semiconductor |
| 353 |
HM514400BLTT-8 |
1,048,576-word x 4-bit dynamic random access memory, 80ns |
Hitachi Semiconductor |
| 354 |
HM514400BLZ-6 |
1,048,576-word x 4-bit dynamic random access memory, 60ns |
Hitachi Semiconductor |
| 355 |
HM514400BLZ-7 |
1,048,576-word x 4-bit dynamic random access memory, 70ns |
Hitachi Semiconductor |
| 356 |
HM514400BLZ-8 |
1,048,576-word x 4-bit dynamic random access memory, 80ns |
Hitachi Semiconductor |
| 357 |
HM514400BS-6 |
1,048,576-word x 4-bit dynamic random access memory, 60ns |
Hitachi Semiconductor |
| 358 |
HM514400BS-7 |
1,048,576-word x 4-bit dynamic random access memory, 70ns |
Hitachi Semiconductor |
| 359 |
HM514400BS-8 |
1,048,576-word x 4-bit dynamic random access memory, 80ns |
Hitachi Semiconductor |
| 360 |
HM514400BTT-6 |
1,048,576-word x 4-bit dynamic random access memory, 60ns |
Hitachi Semiconductor |
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