No. |
Part Name |
Description |
Manufacturer |
271 |
2SC506 |
Industrial Transistor Specification Table |
TOSHIBA |
272 |
2SC507 |
Industrial Transistor Specification Table |
TOSHIBA |
273 |
2SC510 |
Industrial Transistor Specification Table |
TOSHIBA |
274 |
2SC511 |
Industrial Transistor Specification Table |
TOSHIBA |
275 |
2SC512 |
Industrial Transistor Specification Table |
TOSHIBA |
276 |
2SC513 |
Industrial Transistor Specification Table |
TOSHIBA |
277 |
2SC5154 |
TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) POWER AMPLIFIER APPLICATION DRIVER STAGE AMPLIFIER APPLICATIONS |
TOSHIBA |
278 |
2SC517 |
Radio Frequency Transistor specification table |
TOSHIBA |
279 |
2SC519A |
Industrial Transistor Specification Table |
TOSHIBA |
280 |
2SC5209 |
FOR RELAY DRIVE POWER SUPPLY APPLICATION SILICON NPN EPITAXIAL TYPE |
Isahaya Electronics Corporation |
281 |
2SC520A |
Industrial Transistor Specification Table |
TOSHIBA |
282 |
2SC5212 |
FOR HIGH CURRENT DRIVE APPLICATION SILICON NP EPITAXIAL TYPE |
Isahaya Electronics Corporation |
283 |
2SC5214 |
For Low Frequency Amplify Application Silicon Npn Epitaxial Type |
Isahaya Electronics Corporation |
284 |
2SC521A |
Industrial Transistor Specification Table |
TOSHIBA |
285 |
2SC522 |
Industrial Transistor Specification Table |
TOSHIBA |
286 |
2SC523 |
Industrial Transistor Specification Table |
TOSHIBA |
287 |
2SC524 |
Industrial Transistor Specification Table |
TOSHIBA |
288 |
2SC525 |
Industrial Transistor Specification Table |
TOSHIBA |
289 |
2SC5398 |
For Llow Frequency Amplifty Application Silicom NPN Epitaxial Type Micro(Frame type) |
Isahaya Electronics Corporation |
290 |
2SC5431-T1 |
Reduced noise high frequency amplification transistor |
NEC |
291 |
2SC5432-T1 |
Reduced noise high frequency amplification transistor |
NEC |
292 |
2SC5433-T1 |
Reduced noise high frequency amplification transistor |
NEC |
293 |
2SC5434-T1 |
Reduced noise high frequency amplification transistor |
NEC |
294 |
2SC5435-T1 |
Reduced noise high frequency amplification transistor |
NEC |
295 |
2SC5436-T1 |
Reduced noise high frequency amplification transistor |
NEC |
296 |
2SC5437-T1 |
Reduced noise high frequency amplification transistor |
NEC |
297 |
2SC547 |
Industrial Transistor Specification Table |
TOSHIBA |
298 |
2SC548 |
Industrial Transistor Specification Table |
TOSHIBA |
299 |
2SC5482 |
FOR LOW FREQUENCY POWER AMPLIFY APPRICATION SILICON NPN EPITAXIAL TYPE MICRO |
Isahaya Electronics Corporation |
300 |
2SC5485 |
FOR HIGH CURRENT APPLICATION SILICON NPN EPITAXIAL TYPE MICRO |
Isahaya Electronics Corporation |
| | | |