| No. |
Part Name |
Description |
Manufacturer |
| 301 |
2SC549 |
Industrial Transistor Specification Table |
TOSHIBA |
| 302 |
2SC550 |
Industrial Transistor Specification Table |
TOSHIBA |
| 303 |
2SC5507 |
NPN SILICON RF TRANSISTOR FOR LOW CURRENT, LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN SUPER MINI-MOLD |
NEC |
| 304 |
2SC5507-T2 |
NPN SILICON RF TRANSISTOR FOR LOW CURRENT, LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN SUPER MINI-MOLD |
NEC |
| 305 |
2SC5508 |
NPN SILICON RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN SUPER MINI-MOLD |
NEC |
| 306 |
2SC5508-T2 |
NPN SILICON RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN SUPER MINI-MOLD |
NEC |
| 307 |
2SC551 |
Industrial Transistor Specification Table |
TOSHIBA |
| 308 |
2SC552 |
Industrial Transistor Specification Table |
TOSHIBA |
| 309 |
2SC553 |
Industrial Transistor Specification Table |
TOSHIBA |
| 310 |
2SC5549 |
TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE. HIGH SPEED SWITCHING APPLICATION FOR INVERTER LIGHTING SYSTEM |
TOSHIBA |
| 311 |
2SC555 |
Industrial Transistor Specification Table |
TOSHIBA |
| 312 |
2SC556 |
Radio Frequency Transistor specification table |
TOSHIBA |
| 313 |
2SC5606 |
NPN SILICON RF TRANSISTOR FOR LOW NOISE � HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD |
NEC |
| 314 |
2SC5606-T1 |
NPN SILICON RF TRANSISTOR FOR LOW NOISE � HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD |
NEC |
| 315 |
2SC5620 |
For Low Frequency Amplify Application Sillcon Npn Epitaxial Type |
Isahaya Electronics Corporation |
| 316 |
2SC5621 |
FOR HIGH FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE |
Isahaya Electronics Corporation |
| 317 |
2SC5636 |
FOR HIGH FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE |
Isahaya Electronics Corporation |
| 318 |
2SC5658FHA |
NPN General Purpose Amplification Transistor (Corresponds to AEC-Q101) |
ROHM |
| 319 |
2SC5658FHAT2L |
NPN General Purpose Amplification Transistor (Corresponds to AEC-Q101) |
ROHM |
| 320 |
2SC5658T2L |
NPN General Purpose Amplification Transistor |
ROHM |
| 321 |
2SC5814 |
For Low Frequency Amplify Application Silicon NPN Epitaxial Type |
Isahaya Electronics Corporation |
| 322 |
2SC5815 |
For Low Frequency Amplify Application Silicon NPN Epitaxial Type |
Isahaya Electronics Corporation |
| 323 |
2SC5816 |
For Low Frequency Amplify Application Silicon NPN Epitaxial Type |
Isahaya Electronics Corporation |
| 324 |
2SC5817 |
For Low Frequency Amplify Application Silicon NPN Epitaxial Type |
Isahaya Electronics Corporation |
| 325 |
2SC5938 |
FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE |
Isahaya Electronics Corporation |
| 326 |
2SC5938A |
FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE |
Isahaya Electronics Corporation |
| 327 |
2SC5938B |
FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE |
Isahaya Electronics Corporation |
| 328 |
2SC594 |
Industrial Transistor Specification Table |
TOSHIBA |
| 329 |
2SC752G |
Industrial Transistor Specification Table |
TOSHIBA |
| 330 |
2SC756A |
SPECIFICATION TRANSISTORS,DIODES |
Unknow |
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