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Datasheets for D FOR

Datasheets found :: 3637
Page: | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 |
No. Part Name Description Manufacturer
271 2N2325 All-diffused PNPN thyristor designed for gating operation in mA/µA signal or detection circuits Motorola
272 2N2326 All-diffused PNPN thyristor designed for gating operation in mA/µA signal or detection circuits Motorola
273 2N2405 NPN silicon annular transistor designed for medium-power applications Motorola
274 2N2453 Dual NPN silicon transistor designed for differential amplifier applications Motorola
275 2N2453A Dual NPN silicon transistor designed for differential amplifier applications Motorola
276 2N2639 Dual NPN silicon annular transistor designed for low-level, low-noise differential amplifiers Motorola
277 2N2640 Dual NPN silicon annular transistor designed for low-level, low-noise differential amplifiers Motorola
278 2N2641 Dual NPN silicon annular transistor designed for low-level, low-noise differential amplifiers Motorola
279 2N2642 Dual NPN silicon annular transistor designed for low-level, low-noise differential amplifiers Motorola
280 2N2643 Dual NPN silicon annular transistor designed for low-level, low-noise differential amplifiers Motorola
281 2N2644 Dual NPN silicon annular transistor designed for low-level, low-noise differential amplifiers Motorola
282 2N2646 Silicon annular PN unijunction transistor designed for use in pulse and timing circuits, sensing circuits and thyristor trigger circuits Motorola
283 2N2647 Silicon annular PN unijunction transistor designed for use in pulse and timing circuits, sensing circuits and thyristor trigger circuits Motorola
284 2N2728 PNP germanium high-current power transistor especially designed for solar cells, thermo-electric generators, sea cells, fuel cells, and 1.5-volt batteries Motorola
285 2N2802 Dual PNP silicon annular transistors designed for differential applications Motorola
286 2N2803 Dual PNP silicon annular transistors designed for differential applications Motorola
287 2N2804 Dual PNP silicon annular transistors designed for differential applications Motorola
288 2N2805 Dual PNP silicon annular transistors designed for differential applications Motorola
289 2N2806 Dual PNP silicon annular transistors designed for differential applications Motorola
290 2N2807 Dual PNP silicon annular transistors designed for differential applications Motorola
291 2N2845 NPN silicon annular transistor designed for switching applications Motorola
292 2N2846 NPN silicon annular transistor designed for switching applications Motorola
293 2N2847 NPN silicon annular transistor designed for switching applications Motorola
294 2N2848 NPN silicon annular transistor designed for switching applications Motorola
295 2N2857 NPN silicon annular small-signal amplifier transistor designed for amplifiers, oscillators and mixers Motorola
296 2N2857 Epitaxial planar NPN transistor intended for amplifier, oscillator and converter applications up to 500MHz SGS-ATES
297 2N2894 PNP silicon annular transistor designed for switching applications Motorola
298 2N2903 Dual NPN silicon transistors designed for differential amplifier applications Motorola
299 2N2903A Dual NPN silicon transistors designed for differential amplifier applications Motorola
300 2N2906 Silicon PNP epitaxial planar transistors for high speed switching applications and for amplifier circuits AEG-TELEFUNKEN


Datasheets found :: 3637
Page: | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 |



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