No. |
Part Name |
Description |
Manufacturer |
271 |
2N2325 |
All-diffused PNPN thyristor designed for gating operation in mA/µA signal or detection circuits |
Motorola |
272 |
2N2326 |
All-diffused PNPN thyristor designed for gating operation in mA/µA signal or detection circuits |
Motorola |
273 |
2N2405 |
NPN silicon annular transistor designed for medium-power applications |
Motorola |
274 |
2N2453 |
Dual NPN silicon transistor designed for differential amplifier applications |
Motorola |
275 |
2N2453A |
Dual NPN silicon transistor designed for differential amplifier applications |
Motorola |
276 |
2N2639 |
Dual NPN silicon annular transistor designed for low-level, low-noise differential amplifiers |
Motorola |
277 |
2N2640 |
Dual NPN silicon annular transistor designed for low-level, low-noise differential amplifiers |
Motorola |
278 |
2N2641 |
Dual NPN silicon annular transistor designed for low-level, low-noise differential amplifiers |
Motorola |
279 |
2N2642 |
Dual NPN silicon annular transistor designed for low-level, low-noise differential amplifiers |
Motorola |
280 |
2N2643 |
Dual NPN silicon annular transistor designed for low-level, low-noise differential amplifiers |
Motorola |
281 |
2N2644 |
Dual NPN silicon annular transistor designed for low-level, low-noise differential amplifiers |
Motorola |
282 |
2N2646 |
Silicon annular PN unijunction transistor designed for use in pulse and timing circuits, sensing circuits and thyristor trigger circuits |
Motorola |
283 |
2N2647 |
Silicon annular PN unijunction transistor designed for use in pulse and timing circuits, sensing circuits and thyristor trigger circuits |
Motorola |
284 |
2N2728 |
PNP germanium high-current power transistor especially designed for solar cells, thermo-electric generators, sea cells, fuel cells, and 1.5-volt batteries |
Motorola |
285 |
2N2802 |
Dual PNP silicon annular transistors designed for differential applications |
Motorola |
286 |
2N2803 |
Dual PNP silicon annular transistors designed for differential applications |
Motorola |
287 |
2N2804 |
Dual PNP silicon annular transistors designed for differential applications |
Motorola |
288 |
2N2805 |
Dual PNP silicon annular transistors designed for differential applications |
Motorola |
289 |
2N2806 |
Dual PNP silicon annular transistors designed for differential applications |
Motorola |
290 |
2N2807 |
Dual PNP silicon annular transistors designed for differential applications |
Motorola |
291 |
2N2845 |
NPN silicon annular transistor designed for switching applications |
Motorola |
292 |
2N2846 |
NPN silicon annular transistor designed for switching applications |
Motorola |
293 |
2N2847 |
NPN silicon annular transistor designed for switching applications |
Motorola |
294 |
2N2848 |
NPN silicon annular transistor designed for switching applications |
Motorola |
295 |
2N2857 |
NPN silicon annular small-signal amplifier transistor designed for amplifiers, oscillators and mixers |
Motorola |
296 |
2N2857 |
Epitaxial planar NPN transistor intended for amplifier, oscillator and converter applications up to 500MHz |
SGS-ATES |
297 |
2N2894 |
PNP silicon annular transistor designed for switching applications |
Motorola |
298 |
2N2903 |
Dual NPN silicon transistors designed for differential amplifier applications |
Motorola |
299 |
2N2903A |
Dual NPN silicon transistors designed for differential amplifier applications |
Motorola |
300 |
2N2906 |
Silicon PNP epitaxial planar transistors for high speed switching applications and for amplifier circuits |
AEG-TELEFUNKEN |
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