| No. |
Part Name |
Description |
Manufacturer |
| 331 |
2N3050 |
Dual PNP silicon transistor designed for low-level, low-noise differential amplifier applications |
Motorola |
| 332 |
2N3053 |
NPN silicon annular transistor designed for medium-current applications |
Motorola |
| 333 |
2N3055H |
NPN silicon power transistor. 15Amp, 100V, 115Watt. These devices are designed for general purpose switching and amplifier applications. |
USHA India LTD |
| 334 |
2N3114 |
NPN silicon transistor designed for high-voltage, low power video amplifier applications |
Motorola |
| 335 |
2N3118 |
Triple-diffused planar transistor of the silicon NPN type intended for use in RF amplifiers in military and industrial HF and VHF communication equipment |
RCA Solid State |
| 336 |
2N3137 |
Epitaxial planar NPN transistor, designed for application as a Class-C, RF power amplifier |
SGS-ATES |
| 337 |
2N3262 |
Triple-diffused planar transistor of the silicon NPN type intended for high-voltage, high-frequency pulse ampliers |
RCA Solid State |
| 338 |
2N3375 |
NPN silicon RF Power transistor, optimized for large-signal power amplifier and driver applications to 400MHz |
Motorola |
| 339 |
2N3375 |
Silicon Epitaxial Planar Overlay Transistor, collector connected to the case, intended for VHF/UHF transmitting |
Philips |
| 340 |
2N3423 |
Dual NPN silicon transistor designed for use as sens and high-frequency differential amplifiers |
Motorola |
| 341 |
2N3424 |
Dual NPN silicon transistor designed for use as sens and high-frequency differential amplifiers |
Motorola |
| 342 |
2N3425 |
Dual NPN silicon transistor designed for use as a high-frequency sense amplifier |
Motorola |
| 343 |
2N3440S |
Silicon planar epitaxial NPN transistor intended for high voltage switching and linear amplifier applications |
SGS-ATES |
| 344 |
2N3553 |
NPN silicon RF Power transistor, optimized for large-signal power amplifier and driver applications to 400MHz |
Motorola |
| 345 |
2N3632 |
NPN silicon RF Power transistor, optimized for large-signal power amplifier and driver applications to 400MHz |
Motorola |
| 346 |
2N3632 |
Silicon Epitaxial Planar Overlay Transistor, intended for VHF transmitting |
Philips |
| 347 |
2N3722 |
NPN silicon transistor designed for medium-current, high-speed, high-voltage switching and driver applications |
Motorola |
| 348 |
2N3723 |
NPN silicon transistor designed for medium-current, high-speed, high-voltage switching and driver applications |
Motorola |
| 349 |
2N3733 |
NPN silicon transistor designed for amplifier, frequency multiplier and oscillator applications |
Motorola |
| 350 |
2N3796 |
Silicon N-channel MOS field-effect transistor designed for low-power applications in the audio frequency range |
Motorola |
| 351 |
2N3797 |
Silicon N-channel MOS field-effect transistor designed for low-power applications in the audio frequency range |
Motorola |
| 352 |
2N3800 |
Dual PNP silicon transistor designed for differential amplifier applications, TO-71 case |
Motorola |
| 353 |
2N3801 |
Dual PNP silicon transistor designed for differential amplifier applications, TO-71 case |
Motorola |
| 354 |
2N3802 |
Dual PNP silicon transistor designed for differential amplifier applications, TO-71 case |
Motorola |
| 355 |
2N3803 |
Dual PNP silicon transistor designed for differential amplifier applications, TO-71 case |
Motorola |
| 356 |
2N3804 |
Dual PNP silicon transistor designed for differential amplifier applications, TO-71 case |
Motorola |
| 357 |
2N3804A |
Dual PNP silicon transistor designed for differential amplifier applications |
Motorola |
| 358 |
2N3805 |
Dual PNP silicon transistor designed for differential amplifier applications, TO-71 case |
Motorola |
| 359 |
2N3805A |
Dual PNP silicon transistor designed for differential amplifier applications |
Motorola |
| 360 |
2N3806 |
Dual PNP silicon transistor designed for differential amplifier applications |
Motorola |
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