| No. |
Part Name |
Description |
Manufacturer |
| 271 |
1N4763 |
One-watt silicon zener diode designed for constant voltage reference |
Motorola |
| 272 |
1N4763A |
One-watt silicon zener diode designed for constant voltage reference |
Motorola |
| 273 |
1N4764 |
One-watt silicon zener diode designed for constant voltage reference |
Motorola |
| 274 |
1N4764A |
One-watt silicon zener diode designed for constant voltage reference |
Motorola |
| 275 |
1SV294 |
Variable Resistance Attenuator Use |
SANYO |
| 276 |
1SV315 |
Variabe resistance Attenuator Use |
SANYO |
| 277 |
1SV316 |
Variabe resistance Attenuator Use |
SANYO |
| 278 |
2-AA113 |
HF germanium diode pair for high-resistance radio detector and discriminator circuits |
TUNGSRAM |
| 279 |
2-AA116 |
HF germanium diode pair for low resistance radio detector and discriminator circuits |
TUNGSRAM |
| 280 |
2-AA119 |
HF germanium tip diode pair for high-resistance ratio detector and discriminator circuits |
TUNGSRAM |
| 281 |
200D,202D |
Wet Tantalum Capacitors, Wet Sintered Anode Components, Capacitor Assemblies, Type 202D Designed to Meet the Performance and Marking Requirements of Military Style CL55 in Accordance with MIL-DTL-3965 |
Vishay |
| 282 |
2023-1 |
Is an internally-matched device (transistor) decifically designed for 2GHz telecommunications and telemetry applications |
SGS Thomson Microelectronics |
| 283 |
2023-3 |
Is an internally-matched device (transistor) decifically designed for 2GHz telecommunications and telemetry applications |
SGS Thomson Microelectronics |
| 284 |
2023-6 |
Is an internally-matched device (transistor) decifically designed for 2GHz telecommunications and telemetry applications |
SGS Thomson Microelectronics |
| 285 |
20L08 |
2.0GHz 0.8W 20V NPN silicon RF transistor designed for high gain linear performance |
SGS Thomson Microelectronics |
| 286 |
20L15 |
2.0GHz 1.5W 20V NPN silicon RF transistor designed for high gain linear performance |
SGS Thomson Microelectronics |
| 287 |
20PMT03 |
10/100 Base TX Transformer Designed for general Chipsets |
YCL |
| 288 |
2100 |
2.0GHz 0.316W 20V NPN silicon RF transistor designed for high gain linear performance |
SGS Thomson Microelectronics |
| 289 |
2223-10 |
2.2-2.3GHz 10W 24V NPN silicon transistor designed for microwave applications |
SGS Thomson Microelectronics |
| 290 |
2223-14 |
Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.2-2.3GHz |
SGS Thomson Microelectronics |
| 291 |
2223-18 |
2.2-2.3GHz 18W 24V NPN silicon transistor designed for microwave applications |
SGS Thomson Microelectronics |
| 292 |
2223-3 |
2.2-2.3GHz 3W 24V NPN silicon transistor designed for microwave applications |
SGS Thomson Microelectronics |
| 293 |
2327-1 |
Is an internally-matched device (transistor) decifically designed for 2GHz telecommunications and telemetry applications |
SGS Thomson Microelectronics |
| 294 |
2327-15 |
2.3-2.7GHz 15W 24V NPN silicon transistor designed for microwave telecommunication applications |
SGS Thomson Microelectronics |
| 295 |
2327-3 |
Is an internally-matched device (transistor) decifically designed for 2GHz telecommunications and telemetry applications |
SGS Thomson Microelectronics |
| 296 |
2327-5 |
Is an internally-matched device (transistor) decifically designed for 2GHz telecommunications and telemetry applications |
SGS Thomson Microelectronics |
| 297 |
24AA164 |
Note:This product has become 'Obsolete' and is no longer offered as a viable device for design. Please Consider 24AA16 Instead. |
Microchip |
| 298 |
24C01SC |
Note:This product has become 'Obsolete' and is no longer offered as a viable device for design. Please Consider 24LC01SC Instead The 24C01SC is a 1K bit Electrically Erasable PROM with bondpad positions optimized for smart card specific ap |
Microchip |
| 299 |
24C02B |
Note:This product is not recommended for new designs. Please consider 24LC02B instead.The 24C01B is a 2K bit Electrically Erasable PROM memory organized as a single block of 256 x 8-bit with an I2C™ compatible 2-wire serial |
Microchip |
| 300 |
24C08B |
Note:This product has become 'Obsolete' and is no longer offered as a viable device for design. Please Consider 24LCO8B Instead The 24C01B is an 8K bit Electrically Erasable PROM memory organized as four blocks of 256 x 8-bit with an I
| Microchip | |
| | | |
