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Datasheets for ESI

Datasheets found :: 123995
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No. Part Name Description Manufacturer
391 278005 MICRO fuse, very fast-acting type. Radial lead. Ampere rating 5. Nominal resistance cold 0.0156 Ohms. Voltage rating 125. Littelfuse
392 27801.5 MICRO fuse, very fast-acting type. Radial lead. Ampere rating 1 1/2. Nominal resistance cold 0.0578 Ohms. Voltage rating 125. Littelfuse
393 279001 MICRO fuse, very fast-acting type. Radial lead. Ampere rating 1 Nominal resistance cold 0.0880 Ohms. Voltage rating 125. Littelfuse
394 279002 MICRO fuse, very fast-acting type. Radial lead. Ampere rating 2 Nominal resistance cold 0.0425 Ohms. Voltage rating 125. Littelfuse
395 279003 MICRO fuse, very fast-acting type. Radial lead. Ampere rating 3 Nominal resistance cold 0.0275 Ohms. Voltage rating 125. Littelfuse
396 279004 MICRO fuse, very fast-acting type. Radial lead. Ampere rating 4. Nominal resistance cold 0.0202 Ohms. Voltage rating 125. Littelfuse
397 279005 MICRO fuse, very fast-acting type. Radial lead. Ampere rating 5. Nominal resistance cold 0.0156 Ohms. Voltage rating 125. Littelfuse
398 28C64A Note:This product has become 'Obsolete' and is no longer offered as a viable device for design.28C64A is a 64K bit CMOS Parallel EEPROM. The 28C64A is accessed like a static RAM for the read or write cycles without the need of external com Microchip
399 28LV64A Note:This product has become 'Obsolete' and is no longer offered as a viable device for design.28LV64A is a 64K bit CMOS Parallel EEPROM organized as 8K words by 8 bits. The 28LV64A is accessed like a static RAM for the read or write cycle Microchip
400 2931-125 High power silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications SGS Thomson Microelectronics
401 299D Solid Tantalum Capacitors, Solid-Electrolyte TANTALEX Capacitors, Tripole Triple-Lead, Resin-Coated Vishay
402 2N1038 PNP Germanium medium power transistor designed for relay drivers, pulse amplifiers, audio amplifiers and high-current switching applications Motorola
403 2N1039 PNP Germanium medium power transistor designed for relay drivers, pulse amplifiers, audio amplifiers and high-current switching applications Motorola
404 2N1040 PNP Germanium medium power transistor designed for relay drivers, pulse amplifiers, audio amplifiers and high-current switching applications Motorola
405 2N1041 PNP Germanium medium power transistor designed for relay drivers, pulse amplifiers, audio amplifiers and high-current switching applications Motorola
406 2N1708 NPN Silicon transistor designed for very high-speed, low-power saturated switching applications for computers in military and industrial service Motorola
407 2N1724 NPN silicon power transistor designed for switching and aplifier applications Motorola
408 2N1725 NPN silicon power transistor designed for switching and aplifier applications Motorola
409 2N1742 Germanium PNP high frequency transistor designed for driver applications, small-signal amplification, wide band video aplifiers, and VHF/UHF oscillators Motorola
410 2N1893 NPN silicon annular transistor designed for medium-power applications Motorola
411 2N1990 NPN silicon transistor designed for driving neon display tubes Motorola
412 2N2222AHR Rad-Resistant NPN bipolar transistor 40 V, 0.8 A ST Microelectronics
413 2N2222AHRG Rad-Resistant NPN bipolar transistor 40 V, 0.8 A ST Microelectronics
414 2N2222AHRT Rad-Resistant NPN bipolar transistor 40 V, 0.8 A ST Microelectronics
415 2N2222ARHRG Rad-Resistant NPN bipolar transistor 40 V, 0.8 A ST Microelectronics
416 2N2222ARHRT Rad-Resistant NPN bipolar transistor 40 V, 0.8 A ST Microelectronics
417 2N2222ARUBG Rad-Resistant NPN bipolar transistor 40 V, 0.8 A ST Microelectronics
418 2N2222ARUBT Rad-Resistant NPN bipolar transistor 40 V, 0.8 A ST Microelectronics
419 2N2222AUB1 Rad-Resistant NPN bipolar transistor 40 V, 0.8 A ST Microelectronics
420 2N2222AUBG Rad-Resistant NPN bipolar transistor 40 V, 0.8 A ST Microelectronics


Datasheets found :: 123995
Page: | 10 | 11 | 12 | 13 | 14 | 15 | 16 | 17 | 18 |



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