| No. |
Part Name |
Description |
Manufacturer |
| 421 |
2N2222AUBT |
Rad-Resistant NPN bipolar transistor 40 V, 0.8 A |
ST Microelectronics |
| 422 |
2N2224 |
NPN silicon annular transistor designed primarly for high speed switching applications |
Motorola |
| 423 |
2N2242 |
NPN silicon annular transistor designed for high-speed, low-power saturated switching applications |
Motorola |
| 424 |
2N2273 |
High-frequency germanium PNP transistor, designed for mlitary and high-reliability industrial as well as comercial VHF amplifier applications |
Motorola |
| 425 |
2N2322 |
All-diffused PNPN thyristor designed for gating operation in mA/µA signal or detection circuits |
Motorola |
| 426 |
2N2323 |
All-diffused PNPN thyristor designed for gating operation in mA/µA signal or detection circuits |
Motorola |
| 427 |
2N2324 |
All-diffused PNPN thyristor designed for gating operation in mA/µA signal or detection circuits |
Motorola |
| 428 |
2N2325 |
All-diffused PNPN thyristor designed for gating operation in mA/µA signal or detection circuits |
Motorola |
| 429 |
2N2326 |
All-diffused PNPN thyristor designed for gating operation in mA/µA signal or detection circuits |
Motorola |
| 430 |
2N2405 |
NPN silicon annular transistor designed for medium-power applications |
Motorola |
| 431 |
2N2453 |
Dual NPN silicon transistor designed for differential amplifier applications |
Motorola |
| 432 |
2N2453A |
Dual NPN silicon transistor designed for differential amplifier applications |
Motorola |
| 433 |
2N2573 |
Industrial-type, silicon controlled rectifier in a diamond package for applications requiring a high surge-current rating or low thermal resistance |
Motorola |
| 434 |
2N2574 |
Industrial-type, silicon controlled rectifier in a diamond package for applications requiring a high surge-current rating or low thermal resistance |
Motorola |
| 435 |
2N2575 |
Industrial-type, silicon controlled rectifier in a diamond package for applications requiring a high surge-current rating or low thermal resistance |
Motorola |
| 436 |
2N2576 |
Industrial-type, silicon controlled rectifier in a diamond package for applications requiring a high surge-current rating or low thermal resistance |
Motorola |
| 437 |
2N2577 |
Industrial-type, silicon controlled rectifier in a diamond package for applications requiring a high surge-current rating or low thermal resistance |
Motorola |
| 438 |
2N2578 |
Industrial-type, silicon controlled rectifier in a diamond package for applications requiring a high surge-current rating or low thermal resistance |
Motorola |
| 439 |
2N2579 |
Industrial-type, silicon controlled rectifier in a diamond package for applications requiring a high surge-current rating or low thermal resistance |
Motorola |
| 440 |
2N2639 |
Dual NPN silicon annular transistor designed for low-level, low-noise differential amplifiers |
Motorola |
| 441 |
2N2640 |
Dual NPN silicon annular transistor designed for low-level, low-noise differential amplifiers |
Motorola |
| 442 |
2N2641 |
Dual NPN silicon annular transistor designed for low-level, low-noise differential amplifiers |
Motorola |
| 443 |
2N2642 |
Dual NPN silicon annular transistor designed for low-level, low-noise differential amplifiers |
Motorola |
| 444 |
2N2643 |
Dual NPN silicon annular transistor designed for low-level, low-noise differential amplifiers |
Motorola |
| 445 |
2N2644 |
Dual NPN silicon annular transistor designed for low-level, low-noise differential amplifiers |
Motorola |
| 446 |
2N2646 |
Silicon annular PN unijunction transistor designed for use in pulse and timing circuits, sensing circuits and thyristor trigger circuits |
Motorola |
| 447 |
2N2647 |
Silicon annular PN unijunction transistor designed for use in pulse and timing circuits, sensing circuits and thyristor trigger circuits |
Motorola |
| 448 |
2N2728 |
PNP germanium high-current power transistor especially designed for solar cells, thermo-electric generators, sea cells, fuel cells, and 1.5-volt batteries |
Motorola |
| 449 |
2N2802 |
Dual PNP silicon annular transistors designed for differential applications |
Motorola |
| 450 |
2N2803 |
Dual PNP silicon annular transistors designed for differential applications |
Motorola |
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