| No. |
Part Name |
Description |
Manufacturer |
| 541 |
2N4050 |
PNP germanium power transistor designed for high-current applications |
Motorola |
| 542 |
2N4051 |
PNP germanium power transistor designed for high-current applications |
Motorola |
| 543 |
2N4052 |
PNP germanium power transistor designed for high-current applications |
Motorola |
| 544 |
2N4053 |
PNP germanium power transistor designed for high-current applications |
Motorola |
| 545 |
2N4072 |
NPN silicon transistor designed as amplifiers and drivers for large-signal VHF and UHF applications |
Motorola |
| 546 |
2N4073 |
NPN silicon transistor designed as amplifiers and drivers for large-signal VHF and UHF applications |
Motorola |
| 547 |
2N4199 |
Fast switching, high-voltage thyristors especially designed for pulse modulator applications in radar and other similar equipment |
Motorola |
| 548 |
2N4200 |
Fast switching, high-voltage thyristors especially designed for pulse modulator applications in radar and other similar equipment |
Motorola |
| 549 |
2N4201 |
Fast switching, high-voltage thyristors especially designed for pulse modulator applications in radar and other similar equipment |
Motorola |
| 550 |
2N4202 |
Fast switching, high-voltage thyristors especially designed for pulse modulator applications in radar and other similar equipment |
Motorola |
| 551 |
2N4203 |
Fast switching, high-voltage thyristors especially designed for pulse modulator applications in radar and other similar equipment |
Motorola |
| 552 |
2N4204 |
Fast switching, high-voltage thyristors especially designed for pulse modulator applications in radar and other similar equipment |
Motorola |
| 553 |
2N4212 |
PNPN thyristor (silicon controlled rectifier) designed for operation in mA/µA signal or detection circuits |
Motorola |
| 554 |
2N4213 |
PNPN thyristor (silicon controlled rectifier) designed for operation in mA/µA signal or detection circuits |
Motorola |
| 555 |
2N4214 |
PNPN thyristor (silicon controlled rectifier) designed for operation in mA/µA signal or detection circuits |
Motorola |
| 556 |
2N4215 |
PNPN thyristor (silicon controlled rectifier) designed for operation in mA/µA signal or detection circuits |
Motorola |
| 557 |
2N4216 |
PNPN thyristor (silicon controlled rectifier) designed for operation in mA/µA signal or detection circuits |
Motorola |
| 558 |
2N4223 |
Silicon N-channel junction field-effect transistor, designed for VHF amplifier and mixer applications |
Motorola |
| 559 |
2N4224 |
Silicon N-channel junction field-effect transistor, designed for VHF amplifier and mixer applications |
Motorola |
| 560 |
2N4248 |
Silicon PNP Transistors designed for low level - low nosie amplifier applications |
Central Semiconductor |
| 561 |
2N4249 |
Silicon PNP Transistors designed for low level - low nosie amplifier applications |
Central Semiconductor |
| 562 |
2N4250 |
Silicon PNP Transistors designed for low level - low nosie amplifier applications |
Central Semiconductor |
| 563 |
2N4250A |
Silicon PNP Transistors designed for low level - low nosie amplifier applications |
Central Semiconductor |
| 564 |
2N4264 |
NPN silicon transistor designed for low-level, saturated logic applications |
Motorola |
| 565 |
2N4265 |
NPN silicon transistor designed for low-level, saturated logic applications |
Motorola |
| 566 |
2N4409 |
NPN silicon epitaxial transistor, designed for driving neon display tubes |
Motorola |
| 567 |
2N4410 |
NPN silicon epitaxial transistor, designed for driving neon display tubes |
Motorola |
| 568 |
2N4416 |
Silicon N-channel junction field-effect transistor designed for VHF/UHF amplifier applications |
Motorola |
| 569 |
2N4427 |
Epitaxial planar NPN transistor designed for VHF class A, B or C amplifier and oscillator applications |
SGS-ATES |
| 570 |
2N4428 |
Epitaxial planar NPN transistor designed for VHF-UHF class C amplifier output stages in military an industrial communications applications |
SGS-ATES |
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