| No. |
Part Name |
Description |
Manufacturer |
| 661 |
2SB1331 |
1.2W PACKAGE POWER TAPED TRANSISTOR DESIGNED FOR USE WITH AN AUTOMATIC PLACEMENT MECHINE |
ROHM |
| 662 |
2SB1332 |
1.2W PACKAGE POWER TAPED TRANSISTOR DESIGNED FOR USE WITH AN AUTOMATIC PLACEMENT MECHINE |
ROHM |
| 663 |
2SB1333 |
1.2W PACKAGE POWER TAPED TRANSISTOR DESIGNED FOR USE WITH AN AUTOMATIC PLACEMENT MECHINE |
ROHM |
| 664 |
2SB1333A |
1.2W PACKAGE POWER TAPED TRANSISTOR DESIGNED FOR USE WITH AN AUTOMATIC PLACEMENT MECHINE |
ROHM |
| 665 |
2SB1374 |
1.2W PACKAGE POWER TAPED TRANSISTOR DESIGNED FOR USE WITH AN AUTOMATIC PLACEMENT MECHINE |
ROHM |
| 666 |
2SB1428 |
1.2W PACKAGE POWER TAPED TRANSISTOR DESIGNED FOR USE WITH AN AUTOMATIC PLACEMENT MECHINE |
ROHM |
| 667 |
2SB1482 |
1.2W PACKAGE POWER TAPED TRANSISTOR DESIGNED FOR USE WITH AN AUTOMATIC PLACEMENT MECHINE |
ROHM |
| 668 |
2SB1505 |
1.2W PACKAGE POWER TAPED TRANSISTOR DESIGNED FOR USE WITH AN AUTOMATIC PLACEMENT MECHINE |
ROHM |
| 669 |
2SB1515 |
1.2W PACKAGE POWER TAPED TRANSISTOR DESIGNED FOR USE WITH AN AUTOMATIC PLACEMENT MECHINE |
ROHM |
| 670 |
2SB1517 |
1.2W PACKAGE POWER TAPED TRANSISTOR DESIGNED FOR USE WITH AN AUTOMATIC PLACEMENT MECHINE |
ROHM |
| 671 |
2SB1596 |
1.2W PACKAGE POWER TAPED TRANSISTOR DESIGNED FOR USE WITH AN AUTOMATIC PLACEMENT MECHINE |
ROHM |
| 672 |
2SB624R |
PNP silicon epitaxial transistor designed for use in audio frequency power amplifiers |
NEC |
| 673 |
2SC1222 |
NPN silicon transistor designed for use in AF low noise amplifier |
NEC |
| 674 |
2SC1399 |
NPN silicon transistor, designed for use in driver stage of AF amplifier and low speed switching |
NEC |
| 675 |
2SC1400 |
NPN silicon transistor designed for use in AF low noise amplifier of a high-class STEREO-SET |
NEC |
| 676 |
2SC2060 |
1.2W PACKAGE POWER TAPED TRANSISTOR DESIGNED FOR USE WITH AN AUTOMATIC PLACEMENT MECHINE |
ROHM |
| 677 |
2SC2061 |
1.2W PACKAGE POWER TAPED TRANSISTOR DESIGNED FOR USE WITH AN AUTOMATIC PLACEMENT MECHINE |
ROHM |
| 678 |
2SC2233 |
NPN silicon plastic power transistor. Designed for use in B/W TV horizontal deflection output. Vcbo =200V, DC current gain: 20 @ Ic = 4A. Pd = 40W. |
USHA India LTD |
| 679 |
2SC2337 |
Silicon epitaxial transistor built in emitter balast resistors, designed for use in high power high fidelity audio amplifier applications |
NEC |
| 680 |
2SC2337 |
Silicon epitaxial transistor built in emitter balast resistors, designed for use in high power high fidelity audio amplifier applications |
NEC |
| 681 |
2SC2337A |
Silicon epitaxial transistor built in emitter balast resistors, designed for use in high power high fidelity audio amplifier applications |
NEC |
| 682 |
2SC2337A |
Silicon epitaxial transistor built in emitter balast resistors, designed for use in high power high fidelity audio amplifier applications |
NEC |
| 683 |
2SC2737 |
NPN silicon transistor designed for low noise amplifier of VHF/UHF band |
NEC |
| 684 |
2SC2951 |
The ASI 2SC2951 is a High Frequency Transistor Designed for General Purpose Oscillator Applications up to 10 GHz. |
Advanced Semiconductor |
| 685 |
2SC2952 |
The 2SC2592 is a High Frequency Transistor Designed for General Purpose VHF-UHF Amplifier Applications. |
Advanced Semiconductor |
| 686 |
2SC3269 |
1.2W PACKAGE POWER TAPED TRANSISTOR DESIGNED FOR USE WITH AN AUTOMATIC PLACEMENT MECHINE |
ROHM |
| 687 |
2SC3402 |
Switching Applications(with Bias Resistance) |
SANYO |
| 688 |
2SC3804 |
NPN epitaxial planar RF power transistor 13.5V designed for power amplifiers in the 800-900MHz band range |
Mitsubishi Electric Corporation |
| 689 |
2SC3912 |
NPN Epitaxial Planar Silicon Transistors Switching Applications (With Bias Resistance) |
SANYO |
| 690 |
2SC3913 |
NPN Epitaxial Planar Silicon Transistors Switching Applications (with Bias Resistance) |
SANYO |
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