| No. |
Part Name |
Description |
Manufacturer |
| 751 |
3021-XXXX |
OEM Accelerometer Piezoresistive Low Cost |
IC Sensors |
| 752 |
3026 |
OEM Accelerometer Piezoresistive Low Cost |
IC Sensors |
| 753 |
3026-050-N |
OEM Accelerometer Piezoresistive Low Cost |
IC Sensors |
| 754 |
3026-050-P |
OEM Accelerometer Piezoresistive Low Cost |
IC Sensors |
| 755 |
3026-050-S |
OEM Accelerometer Piezoresistive Low Cost |
IC Sensors |
| 756 |
3026-XXXX |
OEM Accelerometer Piezoresistive Low Cost |
IC Sensors |
| 757 |
308A |
Commercial Discrete Wirewound Resistors |
Vishay |
| 758 |
3135-14 |
High power silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications |
SGS Thomson Microelectronics |
| 759 |
3135-25 |
High power silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications |
SGS Thomson Microelectronics |
| 760 |
3135-25N |
High power silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications |
SGS Thomson Microelectronics |
| 761 |
3135-35 |
High power silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications |
SGS Thomson Microelectronics |
| 762 |
3135-45 |
High power silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications |
SGS Thomson Microelectronics |
| 763 |
3135-7 |
High power silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications |
SGS Thomson Microelectronics |
| 764 |
3554 |
DISCONTINUED PRODUCT. No longer recommended for new design. |
Burr Brown |
| 765 |
35PD10M |
The 35PD5M-TO, an InGaAs photodiode with a 5mm-diameter photosensitive packaged in a TO-5 header, is designed for applications in ... |
Anadigics Inc |
| 766 |
35PD1M-TO |
The 35PD1M-TO, an InGaAs photodiode with a 1mm-diameter photosensitive packaged in a TO-46 header, is designed for applications in ... |
Anadigics Inc |
| 767 |
3N155 |
P-channel silicon nitride passivated MOS field-effect enhancement mode (Type C) transistor designed for chopper and switching applications |
Motorola |
| 768 |
3N155A |
P-channel silicon nitride passivated MOS field-effect enhancement mode (Type C) transistor designed for chopper and switching applications |
Motorola |
| 769 |
3N156 |
P-channel silicon nitride passivated MOS field-effect enhancement mode (Type C) transistor designed for chopper and switching applications |
Motorola |
| 770 |
3N156A |
P-channel silicon nitride passivated MOS field-effect enhancement mode (Type C) transistor designed for chopper and switching applications |
Motorola |
| 771 |
3PHASEPWM |
3-Phase Synchronous PWM Controller IC Provides an Integrated Solution for Intel VRM 9.0 Design Guidelines |
International Rectifier |
| 772 |
4001 |
Common base silicon NPN microwave power transistor designed for Class C amplifier applications in the 2.0-4.4GHz |
SGS Thomson Microelectronics |
| 773 |
4003 |
Common base silicon NPN microwave power transistor designed for Class C amplifier applications in the 2.0-4.4GHz |
SGS Thomson Microelectronics |
| 774 |
40693 |
Silicon Triacs designed for use with IC zero-voltage switches as triggering circuits |
RCA Solid State |
| 775 |
40694 |
Silicon Triacs designed for use with IC zero-voltage switches as triggering circuits |
RCA Solid State |
| 776 |
40695 |
Silicon Triacs designed for use with IC zero-voltage switches as triggering circuits |
RCA Solid State |
| 777 |
40696 |
Silicon Triacs designed for use with IC zero-voltage switches as triggering circuits |
RCA Solid State |
| 778 |
40697 |
Silicon Triacs designed for use with IC zero-voltage switches as triggering circuits |
RCA Solid State |
| 779 |
40698 |
Silicon Triacs designed for use with IC zero-voltage switches as triggering circuits |
RCA Solid State |
| 780 |
40699 |
Silicon Triacs designed for use with IC zero-voltage switches as triggering circuits |
RCA Solid State |
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