| No. |
Part Name |
Description |
Manufacturer |
| 601 |
2N5484 |
N-channel depletion mode (Type A) junction field-effect transistor designed for VHF/UHF amplfier applications |
Motorola |
| 602 |
2N5485 |
N-channel depletion mode (Type A) junction field-effect transistor designed for VHF/UHF amplfier applications |
Motorola |
| 603 |
2N5486 |
N-channel depletion mode (Type A) junction field-effect transistor designed for VHF/UHF amplfier applications |
Motorola |
| 604 |
2N5591 |
NPN silicon RF power transistor designed for VHF and 13.6V |
Motorola |
| 605 |
2N5945 |
Application Note - Microstrip design techniques for UHF amplifiers |
Motorola |
| 606 |
2N5946 |
Application Note - Microstrip design techniques for UHF amplifiers |
Motorola |
| 607 |
2N6081 |
NPN transistor designed for VHF FM mobile and marine transmitters 12.5V 15W |
SGS Thomson Microelectronics |
| 608 |
2N6107 |
PNP silicon plastic power transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 70Vdc, Vcb = 80Vdc, Veb = 5Vdc Ic = 7Adc, PD = 40W. |
USHA India LTD |
| 609 |
2N6136 |
Application Note - Microstrip design techniques for UHF amplifiers |
Motorola |
| 610 |
2N6551 |
Complementary Silicon Transistors manufactured by the epitaial planar process designed for general purpose audio amplifier |
Central Semiconductor |
| 611 |
2N6552 |
Complementary Silicon Transistors manufactured by the epitaial planar process designed for general purpose audio amplifier |
Central Semiconductor |
| 612 |
2N6553 |
Complementary Silicon Transistors manufactured by the epitaial planar process designed for general purpose audio amplifier |
Central Semiconductor |
| 613 |
2N6554 |
Complementary Silicon Transistors manufactured by the epitaial planar process designed for general purpose audio amplifier |
Central Semiconductor |
| 614 |
2N6555 |
Complementary Silicon Transistors manufactured by the epitaial planar process designed for general purpose audio amplifier |
Central Semiconductor |
| 615 |
2N6556 |
Complementary Silicon Transistors manufactured by the epitaial planar process designed for general purpose audio amplifier |
Central Semiconductor |
| 616 |
2N696 |
NPN silicon annular transistor designed for small-signal amplifier |
Motorola |
| 617 |
2N697 |
NPN silicon annular transistor designed for small-signal amplifier |
Motorola |
| 618 |
2N699 |
NPN silicon annular transistor designed for medium-current switching and amplifier applications |
Motorola |
| 619 |
2N869A |
PNP silicon annular low-power transistor designed for medium-speed, saturated switching applications |
Motorola |
| 620 |
2N918 |
NPN silicon annular transistor with high reliability designed for use in VHF and UHF amplifier, mixer and oscillator applications |
Motorola |
| 621 |
2N918 |
Epitaxial planar NPN transistor designed High-Frequency oscillators and amplifiers |
SGS-ATES |
| 622 |
2SA1007 |
Silicon epitaxial transistor built in emitter balast resistors, designed for use in high power high fidelity audio amplifier applications |
NEC |
| 623 |
2SA1007 |
Silicon epitaxial transistor built in emitter balast resistors, designed for use in high power high fidelity audio amplifier applications |
NEC |
| 624 |
2SA1007A |
Silicon epitaxial transistor built in emitter balast resistors, designed for use in high power high fidelity audio amplifier applications |
NEC |
| 625 |
2SA1007A |
Silicon epitaxial transistor built in emitter balast resistors, designed for use in high power high fidelity audio amplifier applications |
NEC |
| 626 |
2SA1348 |
Switching Applications(with Bias Resistance) |
SANYO |
| 627 |
2SA1518 |
PNP Epitaxial Planar Silicon Transistors Switching Applications (With Bias Resistance) |
SANYO |
| 628 |
2SA1519 |
PNP Epitaxial Planar Silicon Transistors Switching Applications (with Bias Resistance) |
SANYO |
| 629 |
2SA1520 |
PNP Epitaxial Planar Silicon Transistors Switching Applications (with Bias Resistance) |
SANYO |
| 630 |
2SA1522 |
PNP Epitaxial Planar Silicon Transistors Switching Applications (with Bias Resistance) |
SANYO |
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