| No. |
Part Name |
Description |
Manufacturer |
| 481 |
2N2979 |
Dual NPN silicon annular transistors designed for differential-amplifier, very high Beta guaranteed |
Motorola |
| 482 |
2N3011 |
NPN silicon low-power transistor designed for switching applications |
Motorola |
| 483 |
2N3043 |
Dual NPN silicon transistor designed for low-level, low-noise differential amplifier applications |
Motorola |
| 484 |
2N3044 |
Dual NPN silicon transistor designed for low-level, low-noise differential amplifier applications |
Motorola |
| 485 |
2N3045 |
Dual NPN silicon transistor designed for low-level, low-noise differential amplifier applications |
Motorola |
| 486 |
2N3046 |
Dual NPN silicon transistor designed for low-level, low-noise differential amplifier applications |
Motorola |
| 487 |
2N3047 |
Dual NPN silicon transistor designed for low-level, low-noise differential amplifier applications |
Motorola |
| 488 |
2N3048 |
Dual NPN silicon transistor designed for low-level, low-noise differential amplifier applications |
Motorola |
| 489 |
2N3049 |
Dual PNP silicon transistor designed for low-level, low-noise differential amplifier applications |
Motorola |
| 490 |
2N3050 |
Dual PNP silicon transistor designed for low-level, low-noise differential amplifier applications |
Motorola |
| 491 |
2N3053 |
NPN silicon annular transistor designed for medium-current applications |
Motorola |
| 492 |
2N3055H |
NPN silicon power transistor. 15Amp, 100V, 115Watt. These devices are designed for general purpose switching and amplifier applications. |
USHA India LTD |
| 493 |
2N3114 |
NPN silicon transistor designed for high-voltage, low power video amplifier applications |
Motorola |
| 494 |
2N3137 |
Epitaxial planar NPN transistor, designed for application as a Class-C, RF power amplifier |
SGS-ATES |
| 495 |
2N3303 |
NPN silicon annular transistor designet for high-speed, high-current switching and driving applications |
Motorola |
| 496 |
2N3423 |
Dual NPN silicon transistor designed for use as sens and high-frequency differential amplifiers |
Motorola |
| 497 |
2N3424 |
Dual NPN silicon transistor designed for use as sens and high-frequency differential amplifiers |
Motorola |
| 498 |
2N3425 |
Dual NPN silicon transistor designed for use as a high-frequency sense amplifier |
Motorola |
| 499 |
2N3600 |
Epitaxial planar NPN transistor designed High-Frequency oscillators and amplifiers |
SGS-ATES |
| 500 |
2N3722 |
NPN silicon transistor designed for medium-current, high-speed, high-voltage switching and driver applications |
Motorola |
| 501 |
2N3723 |
NPN silicon transistor designed for medium-current, high-speed, high-voltage switching and driver applications |
Motorola |
| 502 |
2N3733 |
NPN silicon transistor designed for amplifier, frequency multiplier and oscillator applications |
Motorola |
| 503 |
2N3796 |
Silicon N-channel MOS field-effect transistor designed for low-power applications in the audio frequency range |
Motorola |
| 504 |
2N3797 |
Silicon N-channel MOS field-effect transistor designed for low-power applications in the audio frequency range |
Motorola |
| 505 |
2N3800 |
Dual PNP silicon transistor designed for differential amplifier applications, TO-71 case |
Motorola |
| 506 |
2N3801 |
Dual PNP silicon transistor designed for differential amplifier applications, TO-71 case |
Motorola |
| 507 |
2N3802 |
Dual PNP silicon transistor designed for differential amplifier applications, TO-71 case |
Motorola |
| 508 |
2N3803 |
Dual PNP silicon transistor designed for differential amplifier applications, TO-71 case |
Motorola |
| 509 |
2N3804 |
Dual PNP silicon transistor designed for differential amplifier applications, TO-71 case |
Motorola |
| 510 |
2N3804A |
Dual PNP silicon transistor designed for differential amplifier applications |
Motorola |
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