No. |
Part Name |
Description |
Manufacturer |
271 |
AQV227NA |
PhotoMOS relay, RF (radio frequency) type [1-channel (form A) type]. Low On resistance. AC/DC type. Output rating: load voltage 200 V, load current 70 mA. Surface-mount terminal. Tube packing style. |
Matsushita Electric Works(Nais) |
272 |
AQV227NAX |
PhotoMOS relay, RF (radio frequency) type [1-channel (form A) type]. Low On resistance. AC/DC type. Output rating: load voltage 200 V, load current 70 mA. Surface-mount terminal. Tape and reel packing style. Picked from the 1/2/3-pin side. |
Matsushita Electric Works(Nais) |
273 |
AQV227NAZ |
PhotoMOS relay, RF (radio frequency) type [1-channel (form A) type]. Low On resistance. AC/DC type. Output rating: load voltage 200 V, load current 70 mA. Surface-mount terminal. Tape and reel packing style. Picked from the 4/5/6-pin side. |
Matsushita Electric Works(Nais) |
274 |
AQV227NSX |
RF (Radio Frequency) Type SOP Series [1-Channel (Form A) Type] Low On resistance |
Matsushita Electric Works(Nais) |
275 |
AQV227NSZ |
RF (Radio Frequency) Type SOP Series [1-Channel (Form A) Type] Low On resistance |
Matsushita Electric Works(Nais) |
276 |
AQW224N |
RF (Radio Frequency) Type [2-Channel (Form A) Type] - Low On resistance |
Matsushita Electric Works(Nais) |
277 |
AQW224NA |
PhotoMOS relay, FR (radio frequency) type, [2-channel (form A) type] low on resistance. AC/DC type. Output rating: load voltage 400 V, load current 40 mA. surface-mount terminal, tube packing style. |
Matsushita Electric Works(Nais) |
278 |
AQW224NAX |
RF (Radio Frequency) Type [2-Channel (Form A) Type] - Low On resistance |
Matsushita Electric Works(Nais) |
279 |
AQW224NAZ |
RF (Radio Frequency) Type [2-Channel (Form A) Type] - Low On resistance |
Matsushita Electric Works(Nais) |
280 |
AQW225N |
RF (Radio Frequency) Type [2-Channel (Form A) Type] - Low On resistance |
Matsushita Electric Works(Nais) |
281 |
AQW225NA |
PhotoMOS relay, FR (radio frequency) type, [2-channel (form A) type] low on resistance. AC/DC type. Output rating: load voltage 80 V, load current 120 mA. surface-mount terminal, tube packing style. |
Matsushita Electric Works(Nais) |
282 |
AQW225NAX |
RF (Radio Frequency) Type [2-Channel (Form A) Type] - Low On resistance |
Matsushita Electric Works(Nais) |
283 |
AQW225NAZ |
RF (Radio Frequency) Type [2-Channel (Form A) Type] - Low On resistance |
Matsushita Electric Works(Nais) |
284 |
AQW227N |
RF (Radio Frequency) Type [2-Channel (Form A) Type] - Low On resistance |
Matsushita Electric Works(Nais) |
285 |
AQW227NA |
RF (Radio Frequency) Type [2-Channel (Form A) Type] - Low On resistance |
Matsushita Electric Works(Nais) |
286 |
AQW227NAX |
RF (Radio Frequency) Type [2-Channel (Form A) Type] - Low On resistance |
Matsushita Electric Works(Nais) |
287 |
AQW227NAZ |
RF (Radio Frequency) Type [2-Channel (Form A) Type] - Low On resistance |
Matsushita Electric Works(Nais) |
288 |
AUIRF7640S2 |
60V Automotive Grade Single N-Channel HEXFET Power MOSFET in a DirectFET S2 package rated at 21.0 amperes optimized with low on resistance. |
International Rectifier |
289 |
AUIRF7640S2TR |
60V Automotive Grade Single N-Channel HEXFET Power MOSFET in a DirectFET S2 package rated at 21.0 amperes optimized with low on resistance. |
International Rectifier |
290 |
AUIRF7640S2TR1 |
60V Automotive Grade Single N-Channel HEXFET Power MOSFET in a DirectFET S2 package rated at 21.0 amperes optimized with low on resistance. |
International Rectifier |
291 |
AUIRF7648M2TR |
60V Automotive Grade Single N-Channel HEXFET Power MOSFET in a DirectFET M4 package rated at 68.0 amperes optimized with low on resistance. |
International Rectifier |
292 |
AUIRF7648M2TR1 |
60V Automotive Grade Single N-Channel HEXFET Power MOSFET in a DirectFET M4 package rated at 68.0 amperes optimized with low on resistance. |
International Rectifier |
293 |
AUIRF7669L2TR |
100V Automotive Grade Single N-Channel HEXFET Power MOSFET rated at 114.0 amperes optimized with low on resistance. |
International Rectifier |
294 |
AUIRF7669L2TR1 |
100V Automotive Grade Single N-Channel HEXFET Power MOSFET rated at 114.0 amperes optimized with low on resistance. |
International Rectifier |
295 |
AUIRF7675M2 |
150V Automotive Grade Single N-Channel HEXFET Power MOSFET rated at 18.0 amperes optimized with low on resistance. |
International Rectifier |
296 |
AUIRF7675M2TR |
150V Automotive Grade Single N-Channel HEXFET Power MOSFET rated at 18.0 amperes optimized with low on resistance. |
International Rectifier |
297 |
AUIRF7732S2TR |
A 40V Automotive Grade Single N-Channel HEXFET Power MOSFET in a DirectFET SC package rated at 58 amperes optimized with low on resistance |
International Rectifier |
298 |
AUIRF7732S2TR1 |
A 40V Automotive Grade Single N-Channel HEXFET Power MOSFET in a DirectFET SC package rated at 58 amperes optimized with low on resistance |
International Rectifier |
299 |
AUIRF7734M2 |
A 40V Automotive Grade Single N-Channel HEXFET Power MOSFET in a DirectFET M2 package rated at 72 amperes optimized with low on resistance |
International Rectifier |
300 |
AUIRF7734M2TR1 |
A 40V Automotive Grade Single N-Channel HEXFET Power MOSFET in a DirectFET M2 package rated at 72 amperes optimized with low on resistance |
International Rectifier |
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