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Datasheets for ESISTANC

Datasheets found :: 1515
Page: | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |
No. Part Name Description Manufacturer
301 AUIRF7736M2TR A 40V Automotive Grade Single N-Channel HEXFET Power MOSFET in a DirectFET M4 package rated at 108 amperes optimized with low on resistance International Rectifier
302 AUIRF7737L2TR A 40V Automotive Grade Single N-Channel HEXFET Power MOSFET in a DirectFET L6 package rated at 156 amperes optimized with low on resistance International Rectifier
303 AUIRF7737L2TR1 A 40V Automotive Grade Single N-Channel HEXFET Power MOSFET in a DirectFET L6 package rated at 156 amperes optimized with low on resistance International Rectifier
304 AUIRF7738L2 A 40V Automotive Grade Single N-Channel HEXFET Power MOSFET in a DirectFET L6 package rated at 184 amperes optimized with low on resistance International Rectifier
305 AUIRF7738L2TR A 40V Automotive Grade Single N-Channel HEXFET Power MOSFET in a DirectFET L6 package rated at 184 amperes optimized with low on resistance International Rectifier
306 AUIRF7739L2 A 40V Automotive Grade Single N-Channel HEXFET Power MOSFET in a DirectFET L8 package rated at 270 amperes optimized with low on resistance International Rectifier
307 AUIRF7739L2TR1 A 40V Automotive Grade Single N-Channel HEXFET Power MOSFET in a DirectFET L8 package rated at 270 amperes optimized with low on resistance International Rectifier
308 AUIRF7759L2 A 75V Automotive Single N-Channel HEXFET Power MOSFET in a DirectFET L8 package rated at 26 amperes optimized with low on resistance. International Rectifier
309 AUIRF7759L2TR1 A 75V Automotive Single N-Channel HEXFET Power MOSFET in a DirectFET L8 package rated at 26 amperes optimized with low on resistance. International Rectifier
310 AUIRF7769L2 A 100V Automotive Grade Single N-Channel HEXFET Power MOSFET in a DirectFET L8 package rated at 124 amperes optimized with low on resistance International Rectifier
311 AUIRF7769L2TR A 100V Automotive Grade Single N-Channel HEXFET Power MOSFET in a DirectFET L8 package rated at 124 amperes optimized with low on resistance International Rectifier
312 AUIRF7799L2 A 250V Automotive Grade Single N-Channel HEXFET Power MOSFET in a DirectFET L8 package rated at 125 amperes optimized with low on resistance International Rectifier
313 AUIRF7799L2TR A 250V Automotive Grade Single N-Channel HEXFET Power MOSFET in a DirectFET L8 package rated at 125 amperes optimized with low on resistance International Rectifier
314 AUIRF8736M2 A 40V Automotive Grade Single N-Channel HEXFET Power MOSFET in a DirectFET M2 package rated at 137 amperes optimized with low on resistance International Rectifier
315 AUIRF8736M2TR A 40V Automotive Grade Single N-Channel HEXFET Power MOSFET in a DirectFET M2 package rated at 137 amperes optimized with low on resistance International Rectifier
316 AUIRL7732S2TR A 40V Automotive Grade Single N-Channel HEXFET Power MOSFET in a DirectFET M4 package rated at 58 amperes optimized with low on resistance International Rectifier
317 AUIRL7736M2TR A 40V Automotive Grade Single N-Channel HEXFET Power MOSFET in a DirectFET M4 package rated at 112 amperes optimized with low on resistance International Rectifier
318 AUIRL7736M2TR1 A 40V Automotive Grade Single N-Channel HEXFET Power MOSFET in a DirectFET M4 package rated at 112 amperes optimized with low on resistance International Rectifier
319 AUIRL7766M2 A 100V Automotive Grade Single N-Channel HEXFET Power MOSFET in a DirectFET M2 package rated at 51 amperes optimized with low on resistance International Rectifier
320 AUIRL7766M2TR1 A 100V Automotive Grade Single N-Channel HEXFET Power MOSFET in a DirectFET M2 package rated at 51 amperes optimized with low on resistance International Rectifier
321 BA243 Silicon Switching Diode, the forward resistance is constant and very little IPRS Baneasa
322 BA244 Silicon Switching Diode, the forward resistance is constant and very little IPRS Baneasa
323 BAR63 Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz) Siemens
324 BAR63-02W Silicon PIN Diode (PIN diode for high speed switching of RF signals, Low forward resistance, small capacitance small inductance) Siemens
325 BAR63-03 Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz) Siemens
326 BAR63-03W Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz) Siemens
327 BAR63-04 Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz) Siemens
328 BAR63-04W Silicon PIN Diode (PIN diode for high speed switching of RF signal Low forward resistance Very low capacitance For frequencies up to 3 GHz) Siemens
329 BAR63-05 Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz) Siemens
330 BAR63-05W Silicon PIN Diode (PIN diode for high speed switching of RF signal Low forward resistance Very low capacitance For frequencies up to 3 GHz) Siemens


Datasheets found :: 1515
Page: | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |



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