| No. |
Part Name |
Description |
Manufacturer |
| 2761 |
BD37201NUX-TR |
Ultra Low Noise Low Dropout Regulator for Audio System |
ROHM |
| 2762 |
BD7682FJ-LB |
Low Noise Quasi-Resonant Control DC/DC converter IC for AC/DC Converter |
ROHM |
| 2763 |
BD7682FJ-LBE2 |
Low Noise Quasi-Resonant Control DC/DC converter IC for AC/DC Converter |
ROHM |
| 2764 |
BD7683FJ-LB |
Low Noise Quasi-Resonant Control DC/DC converter IC for AC/DC Converter |
ROHM |
| 2765 |
BD7683FJ-LBE2 |
Low Noise Quasi-Resonant Control DC/DC converter IC for AC/DC Converter |
ROHM |
| 2766 |
BD7684FJ-LB |
Low Noise Quasi-Resonant Control DC/DC converter IC for AC/DC Converter |
ROHM |
| 2767 |
BD7684FJ-LBE2 |
Low Noise Quasi-Resonant Control DC/DC converter IC for AC/DC Converter |
ROHM |
| 2768 |
BD7685FJ-LB |
Low Noise Quasi-Resonant Control DC/DC converter IC for AC/DC Converter |
ROHM |
| 2769 |
BD7685FJ-LBE2 |
Low Noise Quasi-Resonant Control DC/DC converter IC for AC/DC Converter |
ROHM |
| 2770 |
BF1005 |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network) |
Siemens |
| 2771 |
BF1005S |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network) |
Siemens |
| 2772 |
BF1009 |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 9 V Integrated stabilized bias network |
Siemens |
| 2773 |
BF1009S |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 9V Integrated bias network) |
Siemens |
| 2774 |
BF1012 |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 12V Integrated stabilized bias network |
Siemens |
| 2775 |
BF1012S |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network) |
Siemens |
| 2776 |
BF179C |
Silicon NPN transistor, low noise, low level amplification |
SESCOSEM |
| 2777 |
BF2030 |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V) |
Siemens |
| 2778 |
BF2030W |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V) |
Siemens |
| 2779 |
BF2040 |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V) |
Siemens |
| 2780 |
BF2040W |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V) |
Siemens |
| 2781 |
BF222 |
Epitaxial planar NPN transistor, designed for tuners of FM receivers, and features low noise, high gain and excelent forward AGC |
SGS-ATES |
| 2782 |
BF257 |
Silicon NPN transistor, low noise, low level amplification |
SESCOSEM |
| 2783 |
BF258 |
Silicon NPN transistor, low noise, low level amplification |
SESCOSEM |
| 2784 |
BF259 |
Silicon NPN transistor, low noise, low level amplification |
SESCOSEM |
| 2785 |
BF272A |
Epitaxial planar PNP transistor designed for RF stages of UHF-VHF tuners, high gain, low feedback capacitance, low noise |
SGS-ATES |
| 2786 |
BF272S |
Epitaxial planar PNP transistor designed for UHF-VHF low noise amplifier, high gain, low feedback capacitance |
SGS-ATES |
| 2787 |
BF357S |
Epitaxial planar NPN transistor, very low noise, high gain and good intermodulation properties |
SGS-ATES |
| 2788 |
BF457 |
Silicon NPN transistor, low noise, low level amplification |
SESCOSEM |
| 2789 |
BF458 |
Silicon NPN transistor, low noise, low level amplification |
SESCOSEM |
| 2790 |
BF459 |
Silicon NPN transistor, low noise, low level amplification |
SESCOSEM |
| | | |
