| No. |
Part Name |
Description |
Manufacturer |
| 2821 |
BFP280W |
NPN Silicon RF Transistor (For low noise, low-power amplifiers in mobile communication systems) |
Siemens |
| 2822 |
BFP420 |
RF-Bipolar - NPN Silicon RF transistor for low noise, high gain amplifiers |
Infineon |
| 2823 |
BFP420 |
NPN Silicon RF Transistor (For high gain low noise amplifiers For oscillators up to 10 GHz) |
Siemens |
| 2824 |
BFP420F |
RF-Bipolar - NPN Silicon RF transistor for low noise, high gain amplifiers in NEW thin small flatlead package TSFP-4 |
Infineon |
| 2825 |
BFP520 |
RF-Bipolar - NPN Silicon RF transistor for low noise, highest gain amplifiers |
Infineon |
| 2826 |
BFP520 |
NPN Silicon RF Transistor (For highest gain low noise amplifier at 1.8 GHz and 2 mA / 2 V) |
Siemens |
| 2827 |
BFP520F |
RF-Bipolar - NPN Silicon RF transistor for low noise, highest gain amplifiers in NEW thin small flatlead package TSFP-4 |
Infineon |
| 2828 |
BFP540 |
RF-Bipolar - NPN Silicon RF transistor for low noise, highest gain amplifiers |
Infineon |
| 2829 |
BFP540F |
RF-Bipolar - NPN Silicon RF transistor for low noise, highest gain LNA in NEW thin small flatlead package TSFP-4 |
Infineon |
| 2830 |
BFP620E7764 |
RF-Bipolar - NPN Silicon Germanium RF Transistor, high gain low noise RF transistor in SOT343 Package |
Infineon |
| 2831 |
BFP620FE7764 |
RF-Bipolar - NPN Silicon Germanium RF Transistor, high gain low noise RF transistor in flatlead package TSFP-4 |
Infineon |
| 2832 |
BFP640 |
Digital Transistors - NPN SiGe RF Transistor, high gain low noise RF transistor in SOT343 Package, 4V, 50mA |
Infineon |
| 2833 |
BFP650 |
Digital Transistors - NPN SiGe RF Transistor, high power amplifiers, low noise RF transistor in SOT343 Package, 4V, 150mA |
Infineon |
| 2834 |
BFP740 |
Ultra Low Noise SiGe:C Heterojunction Bipolar Transistors (HBTs) in SOT343 and TSFP-4 Package |
Infineon |
| 2835 |
BFP740F |
Ultra Low Noise SiGe:C Heterojunction Bipolar Transistors (HBTs) in SOT343 and TSFP-4 Package |
Infineon |
| 2836 |
BFP90A |
NPN gold-metallized 1GHz broadband transistor, low noise, high gain and low distorsion |
Philips |
| 2837 |
BFP91A |
NPN gold-metallized 1GHz broadband transistor, low noise, high gain and low distorsion |
Philips |
| 2838 |
BFP96 |
NPN gold-metallized 1GHz broadband transistor, low noise, high gain and low distorsion |
Philips |
| 2839 |
BFQ193 |
NPN Silicon RF Transistor (For low noise, high-gain amplifiers up to 2GHz For linear broadband amplifiers) |
Siemens |
| 2840 |
BFQ19S |
RF-Bipolar - For low noise, low distortion broadband amplifiers in wireless systems up to 1.5 GHz |
Infineon |
| 2841 |
BFQ19S |
NPN Silicon RF Transistor (For low noise, low distortion broadband amplifiers in antenna and) |
Siemens |
| 2842 |
BFQ28 |
LOW NOISE NPN SILICON MICROWAVE TRANSISTOR UP TO 4GHz |
Siemens |
| 2843 |
BFQ60 |
LOW NOISE NPN SILICON MICROVAVE TRANSISTOR UP TO 2 GHz |
Siemens |
| 2844 |
BFQ65 |
NPN microwave NPN transistor, designed for use in the GHz range, very low noise |
Philips |
| 2845 |
BFR106 |
RF-Bipolar - NPN Silicon RF transistor for low noise, high gain amplifiers |
Infineon |
| 2846 |
BFR106 |
NPN Silicon RF Transistor (For low noise, high-gain amplifiers For linear broadband amplifiers) |
Siemens |
| 2847 |
BFR16 |
Transistor for low-level and low noise amplifiers |
SGS-ATES |
| 2848 |
BFR17 |
Transistor for low-level and low noise amplifiers |
SGS-ATES |
| 2849 |
BFR181 |
RF-Bipolar - NPN Silicon RF transistor for low noise, high gain broadband amplifiers |
Infineon |
| 2850 |
BFR181 |
NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12mA) |
Siemens |
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