No. |
Part Name |
Description |
Manufacturer |
2761 |
MPS3704 |
50 V, 600 mA, NPN epitaxial silicon transistor |
Samsung Electronic |
2762 |
MPS3705 |
50 V, 600 mA, NPN epitaxial silicon transistor |
Samsung Electronic |
2763 |
MPS3706 |
40 V, 600 mA, NPN epitaxial silicon transistor |
Samsung Electronic |
2764 |
MPS4250 |
40 V, PNP epitaxial silicon transistor |
Samsung Electronic |
2765 |
MPS5172 |
25 V, 100 mA, NPN epitaxial silicon transistor |
Samsung Electronic |
2766 |
MPS5179 |
20 V, 50 mA, NPN epitaxial silicon transistor |
Samsung Electronic |
2767 |
MPS651 |
NPN Epitaxial Silicon Transistor |
Fairchild Semiconductor |
2768 |
MPS6513 |
30 V, 100 mA, NPN epitaxial silicon transistor |
Samsung Electronic |
2769 |
MPS6517 |
40 V, 100 mA, PNP epitaxial silicon transistor |
Samsung Electronic |
2770 |
MPS6520 |
40 V, 100 mA, NPN epitaxial silicon transistor |
Samsung Electronic |
2771 |
MPS6521 |
40 V, 100 mA, NPN epitaxial silicon transistor |
Samsung Electronic |
2772 |
MPS6522 |
25 V, 100 mA, PNP epitaxial silicon transistor |
Samsung Electronic |
2773 |
MPS6523 |
25 V, 100 mA, PNP epitaxial silicon transistor |
Samsung Electronic |
2774 |
MPS6560 |
25 V, 500 mA, NPN epitaxial silicon transistor |
Samsung Electronic |
2775 |
MPS6562 |
25 V, 500 mA, PNP epitaxial silicon transistor |
Samsung Electronic |
2776 |
MPS6601 |
25 V, 1000 mA, NPN epitaxial silicon transistor |
Samsung Electronic |
2777 |
MPS6602 |
30 V, 1000 mA, NPN epitaxial silicon transistor |
Samsung Electronic |
2778 |
MPS6651 |
25 V, 1000 mA, PNP epitaxial silicon transistor |
Samsung Electronic |
2779 |
MPS8097 |
60 V, 200 mA, NPN epitaxial silicon transistor |
Samsung Electronic |
2780 |
MPS8098 |
60 V, 500 mA, NPN epitaxial silicon transistor |
Samsung Electronic |
2781 |
MPS8099 |
60 V, 500 mA, NPN epitaxial silicon transistor |
Samsung Electronic |
2782 |
MPS8598 |
60 V, 500 mA, PNP epitaxial silicon transistor |
Samsung Electronic |
2783 |
MPS8599 |
60 V, 500 mA, PNP epitaxial silicon transistor |
Samsung Electronic |
2784 |
NE461M02 |
NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER |
NEC |
2785 |
NE461M02-T1 |
NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER |
NEC |
2786 |
NE698M01-T1 |
NPN epitaxial silicon transistor for microwave high-gain amplification. |
NEC |
2787 |
NE699M01-T1 |
NPN epitaxial silicon transistor for microwave high-gain amplification. |
NEC |
2788 |
NE856M02 |
NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER |
NEC |
2789 |
NE856M02-T1 |
NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER |
NEC |
2790 |
PJ13003CK |
Emitter base voltage:9V; base current:0.75Amp; NPN epitaxial silicon transistor |
PROMAX-JOHNTON |
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