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Datasheets for TAXIAL SI

Datasheets found :: 3023
Page: | 89 | 90 | 91 | 92 | 93 | 94 | 95 | 96 | 97 |
No. Part Name Description Manufacturer
2761 MPS3704 50 V, 600 mA, NPN epitaxial silicon transistor Samsung Electronic
2762 MPS3705 50 V, 600 mA, NPN epitaxial silicon transistor Samsung Electronic
2763 MPS3706 40 V, 600 mA, NPN epitaxial silicon transistor Samsung Electronic
2764 MPS4250 40 V, PNP epitaxial silicon transistor Samsung Electronic
2765 MPS5172 25 V, 100 mA, NPN epitaxial silicon transistor Samsung Electronic
2766 MPS5179 20 V, 50 mA, NPN epitaxial silicon transistor Samsung Electronic
2767 MPS651 NPN Epitaxial Silicon Transistor Fairchild Semiconductor
2768 MPS6513 30 V, 100 mA, NPN epitaxial silicon transistor Samsung Electronic
2769 MPS6517 40 V, 100 mA, PNP epitaxial silicon transistor Samsung Electronic
2770 MPS6520 40 V, 100 mA, NPN epitaxial silicon transistor Samsung Electronic
2771 MPS6521 40 V, 100 mA, NPN epitaxial silicon transistor Samsung Electronic
2772 MPS6522 25 V, 100 mA, PNP epitaxial silicon transistor Samsung Electronic
2773 MPS6523 25 V, 100 mA, PNP epitaxial silicon transistor Samsung Electronic
2774 MPS6560 25 V, 500 mA, NPN epitaxial silicon transistor Samsung Electronic
2775 MPS6562 25 V, 500 mA, PNP epitaxial silicon transistor Samsung Electronic
2776 MPS6601 25 V, 1000 mA, NPN epitaxial silicon transistor Samsung Electronic
2777 MPS6602 30 V, 1000 mA, NPN epitaxial silicon transistor Samsung Electronic
2778 MPS6651 25 V, 1000 mA, PNP epitaxial silicon transistor Samsung Electronic
2779 MPS8097 60 V, 200 mA, NPN epitaxial silicon transistor Samsung Electronic
2780 MPS8098 60 V, 500 mA, NPN epitaxial silicon transistor Samsung Electronic
2781 MPS8099 60 V, 500 mA, NPN epitaxial silicon transistor Samsung Electronic
2782 MPS8598 60 V, 500 mA, PNP epitaxial silicon transistor Samsung Electronic
2783 MPS8599 60 V, 500 mA, PNP epitaxial silicon transistor Samsung Electronic
2784 NE461M02 NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER NEC
2785 NE461M02-T1 NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER NEC
2786 NE698M01-T1 NPN epitaxial silicon transistor for microwave high-gain amplification. NEC
2787 NE699M01-T1 NPN epitaxial silicon transistor for microwave high-gain amplification. NEC
2788 NE856M02 NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER NEC
2789 NE856M02-T1 NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER NEC
2790 PJ13003CK Emitter base voltage:9V; base current:0.75Amp; NPN epitaxial silicon transistor PROMAX-JOHNTON


Datasheets found :: 3023
Page: | 89 | 90 | 91 | 92 | 93 | 94 | 95 | 96 | 97 |



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