| No. |
Part Name |
Description |
Manufacturer |
| 2821 |
PJD882CT |
40V; 3A; NPN epitaxial silicon transistor |
PROMAX-JOHNTON |
| 2822 |
PJE8050CT |
120V; 0.5A; NPN epitaxial silicon transistor |
PROMAX-JOHNTON |
| 2823 |
PJE8050CX |
120V; 0.5A; NPN epitaxial silicon transistor |
PROMAX-JOHNTON |
| 2824 |
PJE8550CT |
20V; 0.5A; PNP epitaxial silicon transistor |
PROMAX-JOHNTON |
| 2825 |
PJP110ACZ |
20V; 10A; PNP epitaxial silicon darlington transistor |
PROMAX-JOHNTON |
| 2826 |
PJP168ACZ |
20V; 18A; PNP epitaxial silicon darlington transistor |
PROMAX-JOHNTON |
| 2827 |
RUR-D1610 |
Dual 16A, high-speed, high efficiency epitaxial silicon rectifier. Vrm 100V. |
General Electric Solid State |
| 2828 |
RUR-D1615 |
Dual 16A, high-speed, high efficiency epitaxial silicon rectifier. Vrm 150V. |
General Electric Solid State |
| 2829 |
RUR-D1620 |
Dual 16A, high-speed, high efficiency epitaxial silicon rectifier. Vrm 200V. |
General Electric Solid State |
| 2830 |
RUR-D810 |
Dual 8-A, high-speed, high efficiency epitaxial silicon rectifier. VRM 100 V. |
General Electric Solid State |
| 2831 |
RUR-D815 |
Dual 8-A, high-speed, high efficiency epitaxial silicon rectifier. VRM 150 V. |
General Electric Solid State |
| 2832 |
RUR-D820 |
Dual 8-A, high-speed, high efficiency epitaxial silicon rectifier. VRM 200 V. |
General Electric Solid State |
| 2833 |
SD1014-06 |
Epitaxial silicon Class C NPN planar transistor for VHF mobile and marine transmitters |
SGS Thomson Microelectronics |
| 2834 |
SD1143-01 |
12.5V Class C 10W epitaxial silicon NPN planar transistor designed primarly for VHF communications |
SGS Thomson Microelectronics |
| 2835 |
SD1224-02 |
Epitaxial silicon NPN planar RF transistor 40W |
SGS Thomson Microelectronics |
| 2836 |
SD1400-02 |
24V 14W Class C epitaxial silicon NPN planar transistor designed for base station applications in cellular telephone systems |
SGS Thomson Microelectronics |
| 2837 |
SD1400-03 |
24V 14W Class C epitaxial silicon NPN planar transistor designed for amplifier applications in the 900-960MHz frequency range |
SGS Thomson Microelectronics |
| 2838 |
SD1412 |
806-866MHz 12.5V 20W epitaxial silicon NPN planar transistor |
SGS Thomson Microelectronics |
| 2839 |
SD1412-3 |
836MHz 12.5V 18W epitaxial silicon NPN planar transistor |
SGS Thomson Microelectronics |
| 2840 |
SD1426 |
24V 60W epitaxial silicon NPN planar transistor designed for common base amplifier applications in the 800-960MHz |
SGS Thomson Microelectronics |
| 2841 |
SD1495-03 |
24V 30W Class C epitaxial silicon NPN transistor designed for amplifier applications in the 900-960MHz |
SGS Thomson Microelectronics |
| 2842 |
SD1496-03 |
24V 55W Class C epitaxial silicon NPN planar transistor 900-960MHz |
SGS Thomson Microelectronics |
| 2843 |
SD4012 |
Gold metallized epitaxial silicon NPN planar RF transistor 3W |
SGS Thomson Microelectronics |
| 2844 |
SS8050 |
NPN Epitaxial Silicon Transistor |
Fairchild Semiconductor |
| 2845 |
SS8050BBU |
NPN Epitaxial Silicon Transistor |
Fairchild Semiconductor |
| 2846 |
SS8050CBU |
NPN Epitaxial Silicon Transistor |
Fairchild Semiconductor |
| 2847 |
SS8050CTA |
NPN Epitaxial Silicon Transistor |
Fairchild Semiconductor |
| 2848 |
SS8050DBU |
NPN Epitaxial Silicon Transistor |
Fairchild Semiconductor |
| 2849 |
SS8050DTA |
NPN Epitaxial Silicon Transistor |
Fairchild Semiconductor |
| 2850 |
SS8550 |
PNP Epitaxial Silicon Transistor |
Fairchild Semiconductor |
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