| No. |
Part Name |
Description |
Manufacturer |
| 2791 |
GDU90-20310 |
Gate Drive Unit |
Dynex Semiconductor |
| 2792 |
GDU90-20421 |
Gate Drive Unit |
Dynex Semiconductor |
| 2793 |
GDU90-20422 |
Gate Drive Unit |
Dynex Semiconductor |
| 2794 |
GDU90-20721 |
Gate Drive Unit |
Dynex Semiconductor |
| 2795 |
GDU90-20722 |
Gate Drive Unit |
Dynex Semiconductor |
| 2796 |
GDU91-20221 |
Gate Drive Unit |
Dynex Semiconductor |
| 2797 |
GDU91-20222 |
Gate Drive Unit |
Dynex Semiconductor |
| 2798 |
GFF-90B-12 |
Gate Turn-off Thyristors |
Hitachi Semiconductor |
| 2799 |
GH-038 |
HYBRID GATE DRIVER IC FOR IGBT |
SanRex |
| 2800 |
GH-039 |
Hybrid gate driver IC for IGBT |
SanRex |
| 2801 |
GJH231/74H01N |
Quadruple 2-input positive NAND gate with wired-OR capability |
Mullard |
| 2802 |
GJH251/74H05N |
Sextuple single-input inverter gate open collector output transistor |
Mullard |
| 2803 |
GN2470 |
INSULATED GATE BIPOLAR TRANSISTOR |
Supertex Inc |
| 2804 |
GN2470K4 |
INSULATED GATE BIPOLAR TRANSISTOR |
Supertex Inc |
| 2805 |
GT10J301 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS |
TOSHIBA |
| 2806 |
GT10J303 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS |
TOSHIBA |
| 2807 |
GT10J311 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS |
TOSHIBA |
| 2808 |
GT10J312 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS |
TOSHIBA |
| 2809 |
GT10J312(SM) |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS |
TOSHIBA |
| 2810 |
GT10J321 |
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Chanenel IGBT |
TOSHIBA |
| 2811 |
GT10Q101 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications |
TOSHIBA |
| 2812 |
GT10Q301 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications Motor Control Applications |
TOSHIBA |
| 2813 |
GT15G101 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N-CHANNEL IGBT STROBE FLASH APPLICATIONS |
TOSHIBA |
| 2814 |
GT15J101 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications Motor Control Applications |
TOSHIBA |
| 2815 |
GT15J102 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications Motor Control Applications |
TOSHIBA |
| 2816 |
GT15J103(SM) |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications Motor Control Applications |
TOSHIBA |
| 2817 |
GT15J121 |
Insulated Gate Bipolar Transistor Silicon N Chanenel IGBT |
TOSHIBA |
| 2818 |
GT15J301 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications Motor Control Applications |
TOSHIBA |
| 2819 |
GT15J311 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications Motor Control Applications |
TOSHIBA |
| 2820 |
GT15J311(SM) |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications Motor Control Applications |
TOSHIBA |
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